• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.10
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• pp.1997-2007
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• 2002

Composite air spindles are appropriate for the high-speed and the high-precision machining as small hole drilling of printed circuit board (PCB) or wafer cutting for manufacturing semiconductors because of the low rotational inertia, the high damping ratio and the high fundamental natural frequency of composite shaft. The axial load and stiffness of composite air spindles fur drilling operation are determined by the thrust ben ring composed of the air supply part mounted on the housing and the rotating part mounted on the rotating shaft. At high-speed rotation, the rotating part of the thrust bearing should be designed considering the stresses induced by centrifugal force as well as the axial stiffness and the natural frequency of the rotating shaft to void the shaft from failure due to the centrifugal force and resonant vibration. In this work, the air supply part of the thrust bearing was designed considering the bending stiffness of the bearing and the applied load. The rotating part of the thrust bearing was designed through finite element analysis considering the cutting forces during manufacturing as well as the static and dynamic characteristics under both the axial and con trifugal forces during high-speed rotation.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.44.1-44.1
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• 2010

레이저 가공기술은 공정 적용이 용이하고 응용 분야가 넓어 산업 전반에 걸쳐 널리 사용되고 있다. 특히, 태양전지 제조공정에서는 cutting, grooving, doping, ablation등의 분야에 활발하게 적용되고 있으며 최근에는 다양한 종류의 레이저를 기술을 이용하여 효율 향상과 원가 절감을 위해 많은 기관에서 활발하게 연구를 진행하고 있다. 본 연구에서는 실리콘웨이퍼에 특정 파장의 레이저를 조사하여 실리콘웨이퍼 표면의 용융과 고상화를 통해 구조적, 전기적 특성 변화를 확인하였다. Si wafer의 표면은 레이저 조사 조건에 의해 다결정화 하며 레이저의 power와 frequency, scan speed등을 조절하여 다결정 실리콘 영역의 형성 깊이를 조절 할 수 있다. 다결정화 된 부분의 구조적 특성은 SED과 XRD를 이용하여 측정하였으며, 전기적 특성은 면저항 측정을 통하여 실시하였다. 또한 이러한 특성을 이용하여 태양전지 제조 공정의 적용가능성을 평가하였다.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.74-78
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• 2007

Much interests has been drawn for noble micro-engineering processes for the continuous size reduction on bulk materials from the field of micro-electronics with much downsized IC chips. A traditional microprocessing based on mechanical blade as well as a relatively long pulsed laser usually influence the physico-chemical properties of intact materials when the techniques are applied to process materials with a spatial resolution less than 10 microns. Meanwhile, ultrafast laser pulses are known to exhibit a very small heat-affect zone(HAE) compared to the traditional laser processing and to be applicable for the new functional materials with high performance in optical and electrical properties. In this report, we will review in brief the recent research works on the enhancement of micro-cutting speed of thin silicon wafer as well as the formation of Ge nanostructures based on ultrafast laser pulses.

• Journal of Biomedical Engineering Research
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• v.37 no.5
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• pp.168-177
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• 2016

In this paper we present an implantable pressure sensor to measure real-time blood pressure by monitoring mechanical movement of artery. Sensor is composed of inductors (L) and capacitors (C) which are formed by microfabrication and direct bonding on two biocompatible substrates (quartz). When electrical potential is applied to the sensor, the inductors and capacitors generates a LC resonance circuit and produce characteristic resonant frequencies. Real-time variation of the resonant frequency is monitored by an external measurement system using inductive coupling. Structural and electrical simulation was performed by Computer Aided Engineering (CAE) programs, ANSYS and HFSS, to optimize geometry of sensor. Ultrafast laser (femto-second) cutting and MEMS process were executed as sensor fabrication methods with consideration of brittleness of the substrate and small radial artery size. After whole fabrication processes, we got sensors of $3mm{\times}15mm{\times}0.5mm$. Resonant frequency of the sensor was around 90 MHz at atmosphere (760 mmHg), and the sensor has good linearity without any hysteresis. Longterm (5 years) stability of the sensor was verified by thermal acceleration testing with Arrhenius model. Moreover, in-vitro cytotoxicity test was done to show biocompatiblity of the sensor and validation of real-time blood pressure measurement was verified with animal test by implant of the sensor. By integration with development of external interrogation system, the proposed sensor system will be a promising method to measure real-time blood pressure.

• The Korean Journal of Applied Statistics
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• v.35 no.3
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• pp.407-419
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• 2022

The semiconductor fabrication process is complex and time-consuming. There are sometimes errors in the process, which results in defective die on the wafer bin map (WBM). We can detect the faulty WBM by finding some patterns caused by dies. When one manually seeks the failure on WBM, it takes a long time due to the enormous number of WBMs. We suggest a two-step approach to discover the probable pattern on the WBMs in this paper. The first step is to separate the normal WBMs from the defective WBMs. We adapt a hierarchical clustering for de-noising, which nicely performs this work by wisely tuning the number of minimum points and the cutting height. Once declared as a faulty WBM, then it moves to the next step. In the second step, we classify the patterns among the defective WBMs. For this purpose, we extract features from the WBM. Then machine learning algorithm classifies the pattern. We use a real WBM data set (WM-811K) released by Taiwan semiconductor manufacturing company.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• Journal of Radiation Industry
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• v.8 no.3
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• pp.147-153
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• 2014

This paper describes a large area CMOS image sensor module Implementation using the precision align inspection program. This work is needed because wafer cutting system does not always have high precision. The program check more than 8 point of sensor edges and align sensors with moving table. The size of a $2{\times}1$ butted CMOS image sensor module which except for the size of PCB is $170mm{\times}170mm$. And the pixel size is $55{\mu}m{\times}55{\mu}m$ and the number of pixels is $3,072{\times}3,072$. The gap between the two CMOS image sensor module was arranged in less than one pixel size.

• Journal of Surface Science and Engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Resources Recycling
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• v.31 no.6
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• pp.60-65
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• 2022

This study presents the carburization process for recycling sludge, which was formed during silicon wafer machining. The sludge used in the carburization process is a mixture of silicon and silicon carbide (SiC) with iron as an impurity, which originates from the machine. Additionally, the sludge contains cutting oil, a fluid with high viscosity. Therefore, the sludge was dried before carburization to remove organic matter. The dried sludge was washed by acid cleaning to remove the iron impurity and subsequently carburized by heat treatment under vacuum to form the SiC powder. The ratio of silicon to SiC in the sludge was varied depending on the sources and thus carbon content was adjusted by the ratio. With increasing SiC content, the carbon content required for SiC formation increased. It was demonstrated that substoichiometric SiC_x (x<1) was easily formed when the carbon content was insufficient. Therefore, excess carbon is required to obtain a pure SiC phase. Moreover, size reduction by high-energy milling had a beneficial effect on the suppression of SiC_x, forming the pure SiC phase.