• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.55-59
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• 2024

Plasma Enhanced Chemical Vapor Deposition (PE-CVD) is a widely used technology in semiconductor manufacturing for thin film deposition. The implementation of wafer guide rings in PE-CVD processes is crucial for enhancing efficiency and product quality by ensuring uniform deposition around wafer edges and reducing particle generation. On the other hand, to prevent overall temperature non-uniformity and degradation of thin film quality within the chamber, it is essential to consider various parameters comprehensively. In this study, after applying the wafer guide rings, temperature variations and fluid flow changes were simulated. Additionally, by simulating the temperature and flow changes when applied to the PE-CVD chamber, this paper discusses the importance of optimizing variables within the entire chamber.