• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1082-1086
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• 2004

In silicon wafer manufacturing process, the grinding process has been adopted to improve the flatness of wafer. The grinding of wafer is usually used by the infeed grinding machine. The infeed grinding machine has been depended on imports. Therefore, it is necessary to develop the infeed grinding machine because the demand of the infeed grinding machine is increasing more and more. This paper describes the technologies of infeed grinding machine and intend to introduce the studies in the development of the intelligent grinding system for grinding of wafer. The air bearing spindle for the infeed grinding machine was developed by domestic technologies and the grinding part design of the intelligent grinding system for wafer grinding was completed.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.10
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• pp.26-33
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• 2004

Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.20-23
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• 2002

In silicon wafer manufacturing process, the grinding process has been adopted to improve the quality of wafer such as flatness, roughness and so on. This paper describes the effect of grinding process on the surface quality of wafer. The experiments are carried out by high precision in fred grinder with air bearing spindle. The relationship between the inclination of chuck table and the flatness of wafer is investigated, and the effect of grinding conditions including wheel speed, table speed, and feed rate on damage depth and roughness of wafer is also investigated. The experimental results show that there is close relationship between the inclination of the chuck table and the flatness of wafer, and the grinding conditions within this paper little affect the flatness of wafer and relatively high affect the damage depth of wafer.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.5
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• pp.58-64
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• 2002

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some finding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametrical silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpieces are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipment with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6 nm in Ra.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.946-949
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• 2001

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some grinding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametral silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpiece are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipped with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6nm in Ra.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.563-564
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• 2006

In silicon wafer manufacturing process, the grinding process has been adopted to improve the flatness of water. The grinding of wafer is usually used by the infeed grinding machine. Grinding conditions are spindle speed, feed speed, rotation speed, grinding stone etc. But grinding condition selection and analysis is so difficult in grinding machine. In the intelligent grinding system based on knowledge many researchers have studied expert system, neural network, fuzzy etc. In this paper we deal grinding condition selection method, Taguchi method and Genetic Analysis.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.660-665
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• 2002

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of grinding wheel in the in-feed machining method. In this study, grinding experiments by the rotary surface grinding machine with straight type wheels ware conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametrical silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpieces are varied, and grinding machine used in this experiment is rotary type surface grinding n/c equipment with an ELID wit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2 - 6 nm in Ra.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.05a
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• pp.128-133
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• 1999

In recent years, LSI devices have become more powerful and lower-priced, caused by a development of various wafer materials and an increase in the diameter of wafers. On the other hand, these have created some serious problems in manufacturing of wafers because materials used as semiconductor substrate are very brittle. In view of this fact, there are some trials to apply shear-mode(or ductile-mode) grinding for efficient manufacturing of semiconductor wafers instead of conventional lapping process. In fact grinding process that has not only more excellent degree of accuracy but also more adaptable to fully automated manufacturing than lapping, is already used in Si machining field. This paper described the elementary studies to establish the grinding technology of wafers. First, we investigated the variation of grinding force and the transition of grinding mode as various grinding conditions. Then, it was inspected that the change of grinding force affected the integrity such as the topography and the roughness of ground surfaces, and led to the chemical defects generation and distribution in damaged layer. The degree of defects was estimated by FT-IR(Fourier Transformed Infrared) Spectroscopy and Auger Electron Spectroscopy