• Food Science and Biotechnology
• /
• v.17 no.4
• /
• pp.713-717
• /
• 2008

In the present study, chronic effects of the hot water extracts of walnut seed (Juglans regia L.) (WSE) and Nelumbo nucifera seed (NSE) were investigated in mice exposed to 2 hr of restraint stress each day for 4 weeks. Corticosterone levels in serum were significantly increased in the vehicle-treated stressed group ($25\;{\mu}g/dL$) compared to that in the control group ($13\;{\mu}g/dL$). This stress induced gastric redness and lesions. However, treatment with WSE and/or NSE significantly protected the stomach from this lesion by 50-60% compared to that in the vehicletreated group. In the amygdala, the administration of WSE and/or NSE also reduced the immediate early gene (c-fos) expression by 70-90% vs. the vehicle-treated group. These suggest that WSE and/or NSE may reduce the appearance of symptoms induced by stress and these materials are useful as anti-stress foods, as natural products tend to be relatively safe compared to chemical products.

• Journal of Animal Science and Technology
• /
• v.50 no.3
• /
• pp.417-428
• /
• 2008

An experiment was conducted with 80 male rats for 4 weeks to investigate the effect of water soluble extracts(WSE) from different sections of farmed Elk(Cervus elaphus) antler on lipid metabolism and hematology. Antlers were divided into four sections of tip, upper, middle and base. Water soluble extract(35g/60ml) was prepared from each section of antler, and was administered orally to male Sprague- Dawley rats(10ml/kg body weight) once a day. Administration of WSE from upper, middle and base sections of antler decreased(P<0.0027) AST values at 3 weeks of feeding, however AST value was decreased(P< 0.0136) in the WSE of base section compared to that of control at 4 weeks of feeding. Administration of antler WSE for 4 weeks decreased total cholesterol in visceral fat(P<0.0035) and liver(P<0.0003) at 4 weeks of feeding compared to those of control. Feeding antler WSE for 4 weeks increased the compositions of C14:0(P<0.0037), C16:1(P<0.0061), C18:1(P<0.0066), C18:2(P< 0.0069) and C18:3(P<0.0035) in the visceral fat compared with that of control.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.202.2-202.2
• /
• 2015

현재 반도체 산업 전반에 걸쳐 사용되고 있는 실리콘등의 3차원 반도체 물질은 반도체 공정 기술의 발전에 따른 물질적인 한계에 부딪히고 있다. 이러한 물질적인 한계를 극복하기 위하여 Graphene과 같은 2차원 물질 중 전이금속 칼코게나이드 화합물(TMD)의 반도체 특성이 뛰어나 실리콘 등을 대체할 차세대 나노 반도체 물질로 활발한 연구가 이루어지고 있다. 특히 기존 반도체를 도핑시키기 위하여 사용되었던 이온 주입 공정은 TMD의 결정구조에 심각한 손상을 가하여 이를 대체할 새로운 도핑 방법에 대한 연구가 활발히 이루어지고 있다. 우리는 이번 연구에서 기존에 유기반도체 물질로 연구되었던 pentacene을 도핑층으로 활용하고 Raman 분광법 및 전기 측정 등을 통하여 TMD물질이 금속화 되지 않는 정도의 매우 낮은 p형 도핑 현상을 확인하였다. 또한 시간에 따른 측정을 통하여 pentacene의 p형 도핑현상이 필름 증착 직후에는 미약하지만 시간이 지나면서 점점 강해지는 것을 발견하였다.. 이는 도핑현상이 pentacene의 구조에 의해 주로 일어나는 것으로 시간이 지남에 따라 대기중의 수분에 의해 생성된 pentacene 산화물들이 도핑 현상을 증가 시키는 원인으로 보인다.

• Journal of the Korean Electrochemical Society
• /
• v.23 no.2
• /
• pp.25-38
• /
• 2020

Photoelectrochemical water splitting has been considered as the most promising technology for generating hydrogen energy. Transition metal dichalcogenide (TMD) compounds have currently attracted tremendous attention due to their outstanding ability towards the catalytic water-splitting hydrogen evolution reaction (HER). Herein, we report the synthesis method of various transition metal dichalcogenide including MoS₂, MoSe₂, WS₂, and WSe₂ nanosheets as excellent catalysts for solar-driven photoelectrochemical (PEC) hydrogen evolution. Photocathodes were fabricated by growing the nanosheets directly onto Si nanowire (NW) arrays, with a thickness of 20 nm. The metal ion layers were formed by soaking the metal chloride ethanol solution and subsequent sulfurization or selenization produced the transition metal chalcogenide. They all exhibit excellent PEC performance in 0.5 M H₂SO₄; the photocurrent reaches to 20 mA cm^-2 (at 0 V vs. RHE) and the onset potential is 0.2 V under AM1.5 condition. The quantum efficiency of hydrogen generation is avg. 90%. The stability of MoS₂ and MoSe₂ is 90% for 3h, which is higher than that (80%) of WS₂ and WSe₂. Detailed structure analysis using X-ray photoelectron spectroscopy for before/after HER reveals that the Si-WS₂ and Si-WSe₂ experience more oxidation of Si NWs than Si-MoS₂ and Si-MoSe₂. This can be explained by the less protection of Si NW surface by their flake shape morphology. The high catalytic activity of TMDs should be the main cause of this enhanced PEC performance, promising efficient water-splitting Si-based PEC cells.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.39 no.12
• /
• pp.1893-1897
• /
• 2010

The total polyphenol contents and antioxidative activities of water and ethanol extracts from Synurus excelsus and Synurus palmatopinnatifidus var. palmatopinnatifidus were determined. Total polyphenol contents of ESE and ESP were 195.7 and 216.2 mg/g, and were higher than WSE (74.7 mg/g) and WSP (77.4 mg/g). The total flavonoid contents were also higher in ESE (176.6 mg/g) and ESP (148.8 mg/g) than WSE and WSP. DPPH radical scavenging activities of ESE and ESP (73.1 and 73.4%) were higher than WSE and WSP as like total polyphenol and flavonoid contents. Although the DPPH radical scavenging activities of the extracts were proportional to total polyphenol contents, there are no differences between water extracts and ethanol extracts of Synurus excelsus and Synurus palmatopinnatifidus on ABTS radical scavenging activities. Moreover, all the solvent extracts (ESE, ESP, WSE and WSP) had no SOD-like activity. These results suggest that consideration for adoption of method is necessary to evaluate antioxidative activity of extracts from plants including vegetables.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.292-292
• /
• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Electronic Materials Letters
• /
• v.14 no.6
• /
• pp.766-773
• /
• 2018

In this paper, temperature dependence of the excitonic bands in a mechanically exfoliated tungsten diselenide ($WSe_2$) monolayer is studied using photoluminescence and circular dichroic photoluminescence (PL) in the temperature range between 8 and 300 K. The peak energies associated with the neutral exciton (A), charged exciton (trion) and localized excitons are extracted from the PL spectra revealing a trion binding energy of around 30 meV. The circular dichroic PL measured at 8 K shows about 45% valley polarisation that sharply reduces with increasing temperature to 5% at 300 K with photoexcitation energy of 1.96 eV. A detailed analysis of the emission line-width suggests that the rapid decrease of valley polarisation with the increase of temperature is caused by the strong exciton-phonon interactions which efficiently scatter the excitons into different excitonic states that are easily accessible due to the supply of excess photoexcitation energy. The emission line-width broadening with the increase of temperature indicate residual exciton dephasing lifetime < 100 fs, that correlates with the observed rapid valley depolarisation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.361.2-361.2
• /
• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• Applied Microscopy
• /
• v.45 no.3
• /
• pp.131-134
• /
• 2015

Here we show how by processing energy dispersive X-ray spectrometry (EDS) data obtained using highly sensitive, new generation EDS detectors in the AZtec LayerProbe software we can obtain data of sufficiently high quality to non-destructively measure the number of layers in two-dimensional (2D) $MoS_2$ and $MoS_2/WSe_2$ and thereby enable the characterization of working devices based on 2D materials. We compare the thickness measurements with EDS to results from atomic force microscopy measurements. We also show how we can use electron backscatter diffraction (EBSD) to address fabrication challenges of 2D materials. Results from EBSD analysis of individual flakes of exfoliated $MoS_2$ obtained using the Nordlys Nano detector are shown to aid a better understanding of the exfoliation process which is still widely used to produce 2D materials for research purposes.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.11
• /
• pp.3225-3227
• /
• 2010

The thermal conductivity of layered metal chalcogenides such as $MT_2$ (M = Mo, W; T = S, Se) shows a marked decrease after exfoliation and subsequent restacking process. Random stacking of two-dimensional crystalline sheets circumvents thermal conduction pathways along a longitudinal direction, which results in a reduction in thermal conductivity. $WS_2$ and $WSe_2$ compounds retain p-type conducting behavior after exfoliation and restacking with decreased electrical conductivity due to the change in carrier concentration. $MoSe_2$ compound exhibits metallic behavior < $130^{\circ}C$ with a small Seebeck coefficient, which results from metastable 1T-$MoSe_2$ structure of the restacked phase.