• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.9-14
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• 2008

In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.

• Journal of Korean Society for Atmospheric Environment
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• v.15 no.6
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• pp.791-797
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• 1999

The activity of domestic pigment titania$(TiO_2)$ impregnated with vanadia$(V_2O_5)$ was investigated in the laboratory microreactor. The meta-titanic acid$(TiO(OH)_2)$ which was produced at Hankook Titanium was selected as the precursor for support. The domestic pigment $TiO_2$ showed higher activity in the reduction of NO with $NH_3$ than the foreign commercial $TiO_2$. $WO_3$ were added to domestic $V_2O_5/TiO_2$ catalytic system to improve the catalytic activity at higher reaction temperature between 400~50$0^{\circ}C$ Also, the deactivation of domestic $V_2O_5/TiO_2$ and $WO_3-V_2O_5/TiO_2$ catalyst by $SO_2$ and $H_2O$ was investigated.

• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1515-1519
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• 2005

Tungsten oxide-modified TiO2 thin films were formed on a glass substrate by sol-gel and dip coating processes using acetyl acetone as a chelating agent. The hydrophilic properties of the thin films were investigated with illumination of UV light. The dependence of water contact angle on material composition and morphology of the film is established with SEM image and AFM profile. The surface morphology was controlled with the change of precursor concentration. 0.01 M of tungsten oxide-modified Ti$O_2$ have shown the highest hydrophilicity after UV-irradiation. The effect of composition on photoinduced hydrophilicity of the W$O_3$-Ti$O_2$ films was also investigated. The films were characterized by XRD, SEM, AFM and XPS.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.22-22
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• 1993

Tungsten silicide는 낮은 전도도, 높은 녹는점, pattern 형성에 용이함등으로 VLSI device Interconnect(Bit line)로 활발하게 이용되고 있다. 일반적으로 Tungsten silicide 는 polycide(WSi$_2$/poly-Si)구조로 사용이 되며, polycide 구조는 산화분위기에서 WSi$_2$위에 SiO$_2$막을 쉽게 형성시키는 장점이 있다. As-dep상태의 polycide를 산화시킬적에는 텅스텐 실리사이드에 존재하는 excess-silicon과 microcrystalline 구조 (grain size=3$\AA$)로 인하여 텅스텐 실리사이드 표면에 균일한 SiO$_2$가 형성이 된다. 그러나 post-anneal을 실시한 샘플 Furnace anneal ($N_2$:O$_2$유량비=2:1) 처리하면 성장된 텅스텐 실사이드 입자의 입계효과에 의하여 텅스텐 실리사이드의 표면에 SiO$_2$뿐만 아니라 WO$_3$가 형성되는 이상산화가 발생되어 공정의 어려움을 야기시키고 있다. 본 실험에서는 post anneal ($700^{\circ}C$, 30min, $N_2$ 분위기) 시킨 시편을 Implantation(As 또는 phosphorous)을 실시하여 실리사이드 표면을 비정질화 시킨후 Furnace anneal 실시하여 이상산화 발생 억제에 I/I처리가 미치는 효과를 관찰하였다. XPS를 이용하여 이상산화막 두께와 WO$_3$존재를 조사하였고, AES를 사용하여 W, Si, O 원소들이 깊이에 따라 변하는 것을 관찰하였다.

• Journal of rehabilitation welfare engineering & assistive technology
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• v.10 no.3
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• pp.237-242
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• 2016

The major advantage of slip-ring technology in Spiral CT is that it facilitates continuous rotation of the x-ray tube, so that volume data can be acquired from a patient quickly. Not only for such a fast scan, but also for the dose reduction purpose, high signal-to-noise ratio and fast data acquisition system is required. In this study, we have built a multi-channel photodetector and multi-channel data acquisition system for CT application. The detector module consisted of CdWO4 crystal and Si photodiode in 16 channels. For the performance test of the preamplifier stage, both the transimpedance and switched integrator types are optimized for the photodetector modules. Switched integrator showed better noise performance in the limited bandwidth which is suitable for the current CT application. The control sequence for data acquisition and 20 bit ADC is designed with VHDL(Very High Speed Integrated Circuit Hardware Description Language) and implemented on FPGA(Field Programmable Gate Array) chip. Our Si photodiode detector module coupled to CdWO4 crystal showed comparable signal with other commercially available photodiode for CT. Switched integrator type showed higher SNR but narrower bandwidth compared to transimpedance preamplifier. Digital hardware is designed by FPGA, so that the control signal could be redesigned without hardware alteration.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.41-41
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• 2001

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.94.1-94
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.230-230
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• 2008

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2005.04a
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• pp.33-34
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.39.2-39
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• 2002