• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.471-474
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• 2000

A flat type microgas sensor was fabricated on the p-type silicon wafer with low stress S $i_3$ $N_4$, whose thickness is 2${\mu}{\textrm}{m}$ using MEMS technology and its characteristics were investigated. W $O_3$thin film as a sensing material for detection of N $O_2$gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$~$600^{\circ}C$) for one hour. N $O_2$gas sensitivities were investigated for the W $O_3$thin films with different annealing temperatures. The highest sensitivity when operating at 20$0^{\circ}C$ was obtained for the samples annealed at $600^{\circ}C$. As the results of XRD analysis, the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibit higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}$ $R_{air}$ operating at 20$0^{\circ}C$ to 5 ppm N $O_2$of the sample annealed at $600^{\circ}C$ were approximately 90. 90.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• Applied Chemistry for Engineering
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• v.5 no.3
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• pp.478-500
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• 1994

The preparation of potassium hexatitanate whisker by flux method was investigated. In this study, 8 types synthesis of flux such as $V_2O_5$, $Bi_2O_3$, $B_2O_3$, $Pb_3O_4$, KCl, $K_4P_2O_7$, $K_2WO_4$ and $K_2MoO_4$ were tested to find a suitable flux for the synthesis of potassium hexatitanate whisker. Effects of various reaction variables such as reaction temperature, time, $TiO_2$ mole ratio to $K_2CO_3$, flux mole ratio to the mixture of $K_2CO_3$ and $TiO_2$, and slow-cooling treatment on the crystallization of potassium hexatitanate whisker were investigated. $K_2MoO_4$ and $K_2WO_4$ were better flux than others tested for the synthesis of potassium hexatitanate. In the presence of $K_2MoO_4$ or $K_2WO_4$ flux, the optimum condition for the synthesis of potassium hexatitanate whisker was that reaction temperature of $1000{\sim}1100^{\circ}C$, reaction time of 5 hours, $TiO_2$ mole ratio to $K_2CO_3$ of 6.0, and flux mole ratio to mixture ($K_2O+nTiO_2$) of 4.0. Slow-cooling treatment showed good effect on the growth of long fibrous potassium hexatitanate.

• Proceedings of the Korean Society for Information Management Conference
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• 2012.08a
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• pp.115-119
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• 2012

본 연구의 목적은 이학분야 국내학술지 중 DOI를 기반으로 하여 인용정보를 제공하고 있는 학술지를 대상으로 피인용정보를 분석하고 WoS, Scopus와 비교를 통해 유사점과 차이점을 찾는 것이다. DOI를 등록하고 있고 WoS, Scopus에 공통으로 등재되어있는 5종의 이학분야 학술지의 CrossRef 피인용정보를 분석한 결과 논문수가 많은 2개 학술지의 인용률이 높았으며 모두 낮은 자기인용률을 보이고 있다. 전체적으로 CrossRef의 고유논문은 논문수와 인용수가 가장 큰 학술지 1종만이 11%이고 나머지 4종의 학술지는 5% 미만으로 대부분 WoS, Scopus 논문에 포함되었다. DB별 비교를 위해 3년간(2008~2010) 발행된 논문의 피인용도를 확인한 결과 모든 학술지에서 WoS의 인용률이 가장 높았고 CrossRef의 경우 레코드 수는 많지만, 전문색인DB가 아니고 참고문헌 등록이 모두 이뤄지지 않아 인용률이 가장 낮았다. 하지만 CrossRef 고유논문비율이 11%인 학술지의 경우 Scopus 보다 인용률이 높은 것으로 나타났다.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.72-76
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• 1985

Single crystals of the compound MeI $(LiMoO_4)$ and $Me^I(LiWO_4)$ ($Me^I=K$, Rb, Cs) were synthesized by slow evaporation from aqueous solution and bycooling from melt. The compounds of potassium or rubidium are hygroscopic and they form easily hydrated crystals $Me^I LiMoO_4$.$H_2O$ or $Me^ILiMoO_4$.$H_2O$ or $Me^ILiWO_4$.$H_2O$ from aqueous solution. The structures of these hydrated crystals are each other isotypic and they are built up of distorted layers of $(LiMoO_5)$ or $(LiWO_5)$. There exist two types of tetrahedral framework structures in this group of anhydrous molybdates and tung-states ; tridymite-type and cristobalite-type. $KLiMoO_4$ and $KLiWO_4$ have two types of polymorphic structures where as only the cristobalite-type is found in the Rb-and Cs-compounds. The system $KLiSO_4-KLiMoO_4$ was studied. Two components are almost immiscible but there eixst a narrow area of solid solution on the side of sulfate in the system.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.359-362
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• 2002

DBPAS has been used to characterize atomic level defect structures in materials. In this investigation the numerical analysis of the Doppler spectra was restricted to the determination of the shape parameter, S, defined as the ratio between the total amount of counts in a central portion of the spectrum and the total amount of counts. As samples were exposed by X-ray increasing from 3, 6, and 9 Gy with 6 MV, and 10 MV each and also by E-beam increasing the energies with 6 MeV, 9 MeV, 12 MeV, and 20 MeV. The S-parameter values were increased as increasing the exposed time and the energies. The S-parameters of the large and small size grains in $CaWO_4$ were measured. The S-parameter of the small size grains in $CaWO_4$ was resulted in larger values.

• Journal of the Korean Applied Science and Technology
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• v.35 no.1
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• pp.163-172
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• 2018

In this study, selective catalytic reductions (SCR) of NO commercial catalysts were used to investigate the effect of ammonia gasification from urea solution. The effects of catalytic chemical composition on the reaction temperature and space velocity were studied. $V_2O_5/TiO_2$ catalysts, which are widely used as SCR catalysts for removal of nitrogen oxides, have better ammonia formation compare to $TiO_2$ and $WO_3-V_2O_5/TiO_2$ catalysts. The $TiO_2$ catalyst not supporting the active metal was not affected by the space velocity as compared with the catalyst supporting $V_2O_5$ or $WO_3-V_2O_5$. The active metal supported catalysts decreased in the ammonia formation as the space velocity increased.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.445-450
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• 1997

An ammonia gas sensor with high sensitivity using thick-film technology were fabricated and examined. The material for sensing the ammonia gas was the mixture of oxide semiconductor, $FeO_{x}-WO_{3}-SnO_{2}$. The sensor exhibits resistance increase upon exposure to low concentration of ammonia gas. The resistance of the sensor is decreased, on the other hand, for exposure to reducing gases such as ethyl alcohol, methane, propane and carbon monoxide. A novel method for detecting ammonia gas quite selectively utilizing a sensor array consisting of an ammonia gas sensor and a compensation element were proposed and developed. The compensation element is a Pt-doped $WO_{3}-SnO_{2}$ gas sensor which shows opposite direction of resistance change in comparison with that of the ammonia gas sensor upon exposure to ammonia gas. Excellent selectivity has been achieved using the sensor array having two sensing elements.

• Journal of Powder Materials
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• v.29 no.2
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• pp.118-122
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• 2022

The synthesis of porous W by freeze-casting and vacuum drying is investigated. Ball-milled WO₃ powders and tert-butyl alcohol were used as the starting materials. The tert-butyl alcohol slurry is frozen at -25℃ and dried under vacuum at -25 and -10℃. The dried bodies are hydrogen-reduced at 800℃ and sintered at 1000℃. The XRD analysis shows that WO₃ is completely reduced to W without any reaction phases. SEM observations reveal that the struts and pores aligned in the tert-butyl alcohol growth direction, and the change in the powder content and drying temperature affects the pore structure. Furthermore, the struts of the porous body fabricated under vacuum are thinner than those fabricated under atmospheric pressure. This behavior is explained by the growth mechanism of tert-butyl alcohol and rearrangement of the powders during solidification. These results suggest that the pore structure of a porous body can be controlled by the powder content, drying temperature, and pressure.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.57-64
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• 1999

The electrical conductivity of TiO$_2$ doped with 0.05~1.5mol% WO$_3$ was measured in the oxygen partial pressure range of 10\ulcorner~10\ulcorner atm and temperature range of 1100~130$0^{\circ}C$ to investigate the defect types and the electrical properties. The grain size and density were increased as the liquid phase was formed by the doped WO$_3$. The secondary phase and WO$_3$peaks at the sample doped up to 4.0 mol% were not detected from the XRD results. The data(log$\sigma$/logPo$_2$) over 110$0^{\circ}C$ were divided into the four regions. From these experimental results, we proposed the following defect regions. 1) Magneli phase(extended defect), 2) Reduced rutile region which is similar to the behavior of undoped rutile, 3) Nearly stoichiometric Ti\ulcornerW\ulcornerO$_2$region in which extra charge of W\ulcorner cation is expected to be compensated by an electron, 4) Overstoichiometric Ti\ulcornerW\ulcornerO\ulcorner region which is a metal deficiency not to be observed in pure TiO$_2$. The electrical conductivity of w-doped TiO$_2$ was influenced by the measuring temperature, oxygen partial pressure, and the dopig content.