• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.15-18
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• 2014

We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1180-1186
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• 2001

W $O_3$-Sn $O_2$thin film sensors with approximately 1${\mu}{\textrm}{m}$ in thickness were fabricated by using a high-vacuum resistance-heating evaporator, were annealed at 50$0^{\circ}C$ for 4 hours in air, and then their crystallinities and surface microstructures were analyzed. As results of gas-sensing characteristics to oxidizing gas, N $O_2$, and reducing gas, CO, of 100 ppm, the highest gas sensitivities (S= $R_{gas}$/ $R_{air}$) were the W $O_3$thin-film sensor measured at 25$0^{\circ}C$ for N $O_2$(S≒1000) and the Sn $O_2$thin-film sensor measured at 15$0^{\circ}C$ to 25$0^{\circ}C$ range for CO (S≒0.25), respectively.ely.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.195-204
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• 2023

Micro-electronic gas sensor devices were developed for the detection of carbon monoxide (CO), nitrogen oxides (NO_x), ammonia (NH₃), and formaldehyde (HCHO), as well as binary mixed-gas systems. Four gas sensing materials for different target gases, Pd-SnO₂ for CO, In₂O₃ for NO_x, Ru-WO₃ for NH₃, and SnO₂-ZnO for HCHO, were synthesized using a sol-gel method, and sensor devices were then fabricated using a micro sensor platform. The gas sensing behavior and sensor response to the gas mixture were examined for six mixed gas systems using the experimental data in MEMS gas sensor arrays in sole gases and their mixtures. The gas sensing behavior with the mixed gas system suggests that specific adsorption and selective activation of the adsorption sites might occur in gas mixtures, and allow selectivity for the adsorption of a particular gas. The careful pattern recognition of sensing data obtained by the sensor array made it possible to distinguish a gas species from a gas mixture and to measure its concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.24-34
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• 1997

In this study, two different types of complementary electrochromic devices using amorphous $WO_{3}$ films as a working electrode, $V_{2}O_{5}$ film and NiO film as counter electrodes respectively were investigated. For the devices using amorphous and crystalline $V_{2}O_{5}$ films of $100{\sim}150nm$ thickness with $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has been shown that transmittance and reflectance of light could be electrically controlled by low applied voltage. For the devices with $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ structure in which NiO film was deposited by a RF reactive sputtering, the optical modulation in visible light region (${\lambda}=550nm$) and in near infrared light region (${\lambda}=850nm$) were 25% and 30%, respectively.

• Korean Journal of Materials Research
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• v.34 no.5
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• pp.235-241
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• 2024

Gas identification techniques using pattern recognition methods were developed from four micro-electronic gas sensors for noxious gas mixture analysis. The target gases for the air quality monitoring inside vehicles were two exhaust gases, carbon monoxide (CO) and nitrogen oxides (NO_x), and two odor gases, ammonia (NH₃) and formaldehyde (HCHO). Four MEMS gas sensors with sensing materials of Pd-SnO₂ for CO, In₂O₃ for NO_X, Ru-WO₃ for NH₃, and hybridized SnO₂-ZnO material for HCHO were fabricated. In six binary mixed gas systems with oxidizing and reducing gases, the gas sensing behaviors and the sensor responses of these methods were examined for the discrimination of gas species. The gas sensitivity data was extracted and their patterns were determined using principal component analysis (PCA) techniques. The PCA plot results showed good separation among the mixed gas systems, suggesting that the gas mixture tests for noxious gases and their mixtures could be well classified and discriminated changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.99-102
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• 1997

An electronic nose system is an instrument designed far mimicking human olfactory system. It consists generally of gas (odor) sensor array corresponding to olfactory receptors of human nose and artificial neural network pattern recognition technique based on human biological odor sensing mechanism. Considerable attempts to develop the electronic nose system have been made far applications in the fields of floods, drinks, cosmetics, environment monitoring, etc. A portable electronic nose system has been fabricated by using oxide semiconductor gas sensor array and pattern recognition technique such as principal component analysis (PCA) and back propagation artificial neural network The sensor array consists of six thick film gas sensors whose sensing layers are Pd-doped WO$_3$ Pt-doped SnO$_2$ TiO$_2$-Sb$_2$O$_3$-Pd-doped SnO$_2$ TiO$_2$-Sb$_2$O$_{5}$-Pd-doped SnO$_2$+Pd filter layer, A1$_2$O$_3$-doped ZnO and PdCl$_2$-doped SnO$_2$. As an application the system has been used to identify CO/HC car exhausting gases and the identification has been successfully demonstrated.d.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Journal of information and communication convergence engineering
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• v.4 no.1
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• pp.18-22
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• 2006

A small-sized gas identification system has been fabricated and characterized using an integrated gas sensor array and artificial neural-network. The sensor array consists of four thick-film oxide semiconductor gas sensors whose sensing layers are $In_{2}O_{3}-Sb_{2}O_{5}-Pd-doped\;SnO_2$ + Pd-coated layer, $La_{2}O_{5}-PdCl_{2}-doped\;SnO_2,\;WO_{3}-doped\;SnO_{2}$ + Pt-coated layer and $ThO_{2}-V_{2}O_{5}-PdCl_{2}\;doped\;SnO_{2}$. The small-sized gas identification instrument is composed of a GMS 81504 containing an internal ROM (4k bytes), a RAM (128 bytes) and four-channel AD converter as MPU, LEDs for displaying alarm conditions for three gases (liquefied petroleum gas: LPG, liquefied natural gas: LNG and carbon monoxide: CO) and interface circuits for them. The instrument has been used to identify alarm conditions for three gases among the real circumstances and the identification has been successfully demonstrated.