• Proceedings of The Korean Society of Agricultural and Forest Meteorology Conference
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• 2019.08a
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• pp.104-119
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• 2019

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.418-424
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• 1996

(Ti.W)C complex carbide was synthesized by self-propagating high temperature synthesis (SHS) chemical furnace. Attempt to find the optimal condition for synthesis of (Ti.W)C the effects of molar ratio of Ti:W:C on the synthesized powders and mechanical properties were investigated, Optimum molar ratio of these synthe-sized powder was Ti:W:C=0.7:0.2:1.0 The bulk density M,O.R Hardness Fracture toughness of (Ti.W)C complex carbide sintered at 200$0^{\circ}C$ for 60 min by hot-pressing under the pressure of 20 MPa were 7.6g/cm3, 475 MPa, 17,.7 GPa respectively.

• The Korean Journal of Pesticide Science
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• v.4 no.3
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• pp.68-74
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• 2000

Penicillium oxalicum (PENOX) has shown the potential as a biocontrol agent(5CA) for control of a weed, clover(Trifolium repens L.) in grass plots. The bioherbicidal activity may be due to germinative and growth capacities and substrate availability of the agent over a range of environmental factors. The influences of different water activities($0.94{\sim}0.995\;a_w$) and temperatures($18{\sim}30^{\circ}C$) on mycelial growth, conidial germination, sporulation oil 2% MEA(malt extract agar) adjusted to different water activities with glycerol, and carbon source utilization using BIOLOG GN MicroPlate were determined in vitro. Decreases in $a_w$ on MEA caused a reduction in mycelial growth and conidial germination depending on temperature. The mycelial growth of PENOX was greatest at $30^{\circ}C/0.995\;a_w$. At some lowered water activity($0.97\;a_w$), the growth was similar between 25 and $30^{\circ}C$, and considerably decreased at lowered temperature($20^{\circ}C$). The germination rate was also greatest at $30^{\circ}C/0.995\;a_w$. Lag phase times for PENOX at $18^{\circ}C$ on MEA were >6hrs at tile whole $a_w$ level tested, and at 18 and $25^{\circ}C$ they were >18hrs and >12hrs at $0.94\;a_w$, respectively. However, its sporulation was some better at $0.97\;a_w$ than $0.995\;a_w$ or $0.94\;a_w$, and better at $20^{\circ}C$ than $30^{\circ}C$. In contrast, the number of carbon sources(niche size) utilized by PENOX varied with $a_w$ and temperature. Under some water stress condition($0.95\;a_w$), the agent utilized smaller number of carbon sources than $0.995\;a_w$ depending on temperature. The niche size at 0.995 and $0.95\;a_w$ were highest at $25^{\circ}C$, and showed 86 and 65, respectively. At $30^{\circ}C$, the niche size at 0.995 and $0.95\;a_w$ showed 84 and 50, respectively. There was no carbon source utilized by PENOX at $0.90\;a_w$ regardless of temperature. These information of tile fungal ecophysiology will be useful for the effective development of BCA.

• Journal of applied mathematics & informatics
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• v.16 no.1_2
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• pp.461-468
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• 2004

Let W(z) be a power series with operator coefficients such that multiplication by W(z) is contractive in C(z). The overlapping space $L(\varphi)$ of H(W) in C(z) is a Herglotz space with Herglotz function $\varphi(z)$ which satisfies $\varphi(z)+\varphi^＊(z^{-1})=2[1-W^{*}(z^{-1})W(z)]$. The identity ${}_{L(\varphi)}={-}_{H(W)}$ holds for every f(z) in $L(\varphi)$ and for every vector c.

• Korean Journal of Mathematics
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• v.30 no.3
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• pp.467-474
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• 2022

In this article, we consider the integral operator 𝓒^b,c, which is defined as follows: $${\mathcal{C}}^{b,c}(f)(z)={\displaystyle\smashmargin{2}{\int\nolimits_{0}}^z}{\frac{f(w)*F(1,1;c;w)}{w(1-w)^{b+1-c}}}dw,$$ where * denotes the Hadamard/ convolution product of power series, F(a, b; c; z) is the classical hypergeometric function with b, c > 0, b + 1 > c and f(0) = 0. We investigate the boundedness of the 𝓒^b,c operators on Bloch spaces.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.345-349
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• 2005

Low resistive ($300{\mu}{\Omega}$-cm) W-C-N films have been deposited on tetraethylorthosilicate (TEOS) interlayer dielectric by atomic layer deposition (ALD) with $WF_6-N_2-CH_4$ gas. The exposure cycles of $N_2$ and $CH_4$ are synchronized with pulse plasma. The W-C-N films on TEOS layer follow the ALD mechanism and keep constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles. As a diffusion barrier for Cu interconnection the W-C-N films maintain amorphous phase and Cu inter-diffusion is not occurred even at $800^{\circ}C$ for 30 min.

• Nuclear Engineering and Technology
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• v.54 no.8
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• pp.2801-2808
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• 2022

The synergistic effect of ZrC nanoparticle pining and Re solution in W matrix on the thermal stability of tungsten was studied by investigating the evolution of the microstructure, hardness and tensile properties after annealing in a temperature range of 1000-1700 ℃. The results of metallography, electron backscatter diffraction pattern and Vickers micro-hardness indicate that the rolled W-1wt%Re-0.5 wt% ZrC alloy has a higher recrystallization temperature (1600 ℃-1700 ℃) than that of the rolled pure W (1200 ℃), W-0.5 wt%ZrC (1300 ℃), W-0.5 wt%HfC (1400-1500 ℃) and W-K-3wt%Re alloy fabricated by the same technology. The molecular dynamics simulation results indicated that solution Re atoms in W matrix can slow down the self-diffusion of W atoms and form dragging effect to delay the growth of W grain, moreover, the diffusion coefficient decrease with increasing Re content. In addition, the ZrC nanoparticles can pin the grain boundaries and dislocations effectively, preventing the recrystallization. Therefore, synergistic effect of solid solution Re element and dispersed ZrC nanoparticles significantly increase recrystallization temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.