• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.22-26
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• 1983

P+N and P+NN+ solar cells with the area of 3.36 $\textrm{cm}^2$ were fabricated by thermal diffusion. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area(active area) conversion efficiency was 13.4%(14.7%) for P+N cell fabricated by 15 min boron predeposition at 94$0^{\circ}C$ and 20 min annealing at 80$0^{\circ}C$, and 14.3%(15.6%) for P+NN+ cell processed by 15 min boron predeposition at 94$0^{\circ}C$ and 50 min annealing at 80$0^{\circ}C$ after 20 min back phosphorus diffusion at 1,05$0^{\circ}C$. The minority carrier lifetime in bulk of P+NN+ cells was increased about 2~3 times comparing with P+N cells because of guttering and BSF effect due to back phosphorus doping. The methods used for efficiency improvement were AR coating, Ag electroplating, back doping and fine grid pattern as well as the control of front doping profile.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.1-6
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• 2000

We prepared organic light-emitting-diodes (LEDs) with a squarylium(Sq)-doped aluminum quinoline(Alq3) emission layer by the vapor deposition method. We discussed their electro-luminescence(EL) and electrical properties. The EL from Sq had a peak wavelength of 670nm and a half-width of 30nm. Only the EL from So(purely red) could be observed at the doping concentration of over 15mol%, but the luminance were low (0.21cd/$m^2$, 0.1cd/$m^2$) and EL efficiency was under the $10^{-2}$W. Although Sq molecules seemed to act as trap site in Alq3 molecules, they acted as carrier drafts site at doping concentration of over 5mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.50-50
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• 2009

In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.637-640
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• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

• Macromolecular Research
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• v.17 no.1
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• pp.31-36
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• 2009

Highly transparent, thin polythiophene (PT) films were successfully synthesized by the plasma polymerization of thiophene. These films were doped with $O_2$ plasma by in-situ doping technique. The plasma polymerized PT films were deposited at about 50 to 340 nm/min, depending on the temperature and plasma power. A resultant transparency as high as 85% was achieved. The plasma polymerized PT films exhibited the characteristics of an insulator or semiconductor ($10^{10{\sim}12}{\Omega}/{\Box}$, $10^{-7}S/cm$). The conductivity was immediately increased up to $10{\Omega}/{\Box}$ and $10^{-2}S/cm$, when doped with $O_2$ plasma. The plasma-doped PT films exhibited an increased surface roughness resulting in a decreased contact angle. However, the thickness of the PT layer was partially decomposed and/or etched with increasing voltage above 40 W.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.84-89
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• 1995

The growth and the film characteristics of heteroepitaxial $Si_{1-x}Ge_x$ films growth by the Rapid Thermal Chemical Vapor Deposition(RTCVD)method are described. For the growth of $Si_{1-x}Ge_x$ heteroepitaxial layers, $SiH_4/GeH_4/H_2$gas mixtures are used. The growth conditions are varied to investigate their effects on the Si/Ge composition ratios, the interface abruptness and crystalline properties. The Si/Ge composition ratios are analyzed with the RBS and the SIMS techniques, and the interface abruptness are deduced from these data. The crystalline properties are analyzed from TEM pictures. The experimental data shows that the crystalline perfection is excellent at the growth temperature of as low as $650^{\circ}C$, and the composition ratios change linearly with $SiH_4/GeT_$$ gas mixing ratios in our experimental ranges. Boron doping experiments are also performed using 200 ppm $B_2H_6$ source gas. The doping profiles are measured with SIMS technique. The SIMS data shows that the doping abruptness can be controlled within about 200$\AA$/decade.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.213-213
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• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.97-97
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• 2006