• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.1931-1936
• /
• 2007

The application of high velocity air jets to heat transfer surface has tremendous engineering potential in various industries. The impinging jets are therefore widely used for their enhanced transport characteristics, especially for drying of continuous materials such as sheet, film, carpets, forming materials and pallets. This paper presents the drying characteristics of plate type material and performs the test with the change of operating conditions in conveyer band dryer using the impinging jet nozzles. The factors influencing drying rate were confirmed, also the design data of band dryer using the impinging jet was obtained.

• Proceedings of the KSRS Conference
• /
• 2004.10a
• /
• pp.460-463
• /
• 2004

There is a trend to replace TWTA of SSPA in S-Band uplink application for satellite operation. KARI developed l20W full S-Band SSPA system in early 2004. This paper covers SSPA system design and its test results. Through tests, nominal gain of 57dB, gain stability of +/-1dB over frequency, and gain stability of +/-0.5dB over temperature were shown. IMD value of -16.5dBc, -19dBc were revealed in PI and P3 output operations. With meeting specifications, l20W SSPA is expected to be used in operational S-Band uplink application.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.46 no.12
• /
• pp.14-21
• /
• 2009

In this paper, a Ka-band 10 W power amplifier module with seven power MMIC bare dies is designed and fabricated using MIC technology which combines multiple MMIC chips on a thin film substrate. Modified Wilkinson power dividers/combiners and CBFGCPW-Microstrip transitions for suppressing resonance and reducing connection loss are utilized for high-gain and high-power millimeter wave modules. A new TTL pulse timing control scheme is proposed to improve output power degradation due to large bypass capacitors in the gate bias circuit. Pulse-mode operation time is extended more than 200 nsec and output power increase of 0.62 W is achieved by applying the proposed scheme to the Ka-band 10 W power amplifier module operating in the pulsed condition of 10 kHz and $5\;{\mu}sec$. The implemented power amplifier module shows a power gain of 59.5 dB and an output power of 11.89 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.4
• /
• pp.440-446
• /
• 2011

In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.246-246
• /
• 2016

Tungsten-nitrogen (W-N) co-doping has been known to enhance the photocatalytic activity of anatase titania nanoparticles by utilizing visible light. The doping effects are, however, largely dependent on calcination or annealing conditions, and thus, the massive production of quality-controlled photocatalysts still remains a challenge. Using density functional theory (DFT) thermodynamics and time-dependent DFT (TDDFT) computations, we investigate the atomic structures of N doping and W-N co-doping in anatase titania, as well as the effect of the thermal processing conditions. We find that W and N dopants predominantly constitute two complex structures: an N interstitial site near a Ti vacancy in the triple charge state and the simultaneous substitutions of Ti by W and the nearest O by N. The latter case induces highly localized shallow in-gap levels near the conduction band minimum (CBM) and the valence band maximum (VBM), whereas the defect complex yielded deep levels (1.9 eV above the VBM). Electronic structures suggest that substitutions of Ti by W and the nearest O by N improves the photocatalytic activity of anatase by band gap narrowing, while defective structure degrades the activity by an in-gap state-assisted electron-hole recombination, which explains the experimentally observed deep level-related photon absorption. Through the real-time propagation of TDDFT (rtp-TDDFT), we demonstrate that the presence of defective structure attracts excited electrons from the conduction band to a localized in-gap state within a much shorter time than the flat band lifetime of titania. Based on these results, we suggest that calcination under N-rich and O-poor conditions is desirable to eliminate the deep-level states to improve photocatalysis.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.1
• /
• pp.7-13
• /
• 2007

In this paper, we have designed and fabricated a small size wide-band monopole antenna which can integrate the frequency of previous business mobile communication system by adding 4 PCS of post type parasitic element on top-loaded sleeve monopole antenna. We have observed the properties of return loss upon a parameter change of element, and we also examined radiation properties in the band of PCS, W-CDMA, WiBro, W-LAN and S-DMB in order to make sure the suggested antenna's wide-band properties. We have found that the proposed antenna has omni-direction in horizontal plane and figure eight-direction in vertical plane, and we could have good return loss($Return\;loss{\leq}-10\;dB$) and $1.14{\sim}3.66\;dBi$ gain in $1.67{\sim}3.55\;GHz$ of frequency range($B/W{\fallingdotsep}72%$).

• Proceedings of the KSRS Conference
• /
• 2005.10a
• /
• pp.485-488
• /
• 2005

The 2nd KOrea Multi-Purpose Satellite (KOMPSAT -2) has been developed by Korea Aerospace Research Institute (KARI) since 2000. Multi Spectral Camera (MSC) is the payload for KOMPSAT -2, which will provide the observation imagery around Korean peninsula with high resolution. KOMPSAT-2 has adopted X-band Tracking System (XTS) for transmitting earth observation data to ground station. For this, data which describes and controls the pre-defined motion of each on-board X-Band antenna in XTS, must be transmitted to the spacecraft as S-Band command and it is called as Tracking Parameter Files (TPF). In this paper, the result of the development of TPF Generation S/W for KOMPSAT-2 X-Band Antenna Motion Control.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.11 no.9
• /
• pp.841-848
• /
• 2016

In this paper, a microstrip-fed dual-band monopole antenna with DGS(: Defected Ground System) for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two strip lines and DGS structure and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters W2, L10, W3, and DGS to get the optimized parameters. The proposed antenna is made of $21.0{\times}36.0{\times}1.6mm3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 700 MHz(2.10~2.80 GHz) and 1,780 MHz(5.02~6.80 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4GHz band/5.0GHz band), respectively.

• ETRI Journal
• /
• v.36 no.3
• /
• pp.498-501
• /
• 2014

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.4
• /
• pp.501-505
• /
• 2015

In this paper, we demonstrated a 4W power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band satellite communication applications. The used device technology relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 4W power amplifier MMIC has linear gain of over 30 dB and saturated output power of over 36.1 dBm in the frequency range of 13.75 GHz ~ 14.5 GHz. Power added efficiency (PAE) is over 30 %.