• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.186-186
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• 2013

종래의 흑연 위주 연료전지 분리판 개발되어 최근 고분자 전해질 막 연료전지가 높은 전력, 낮은 배기 가스 배출, 낮은 작동 온도로 자동차 산업에서 상당한 주목을 받고 있다. 요구사항은 높은 전기 전도도, 높은 내식성, 낮은 가스 투과성, 낮은 무게, 쉬운 가공, 낮은 제조비용이다. Thin film Cr 장비로 저항가열 furnace, sputter 등이 사용된다. 연료전지 분리판의 고전도도, 내부식성 보호막의 고속 증착을 위한 새로운 증착원으로 스퍼터 - 승화형 소스의 가능성을 유도 결합 플라즈마에 금속 봉을 직류 바이어스 함으로써 시도하였다. 유도 결합 플라즈마를 이용하여 승화증착 시스템을 사용하여 OES (SQ-2000)와 QMS (CPM-300)를 사용하여 $N_2$ flow에 따른 유도 결합 플라즈마를 이용한 스퍼터-승화증착 시스템을 사용 하여도 균일한 공정을 하는 것을 확인 하였다. 5 mTorr의 Ar 유도 결합 플라즈마를 2.4 MHz, 500 W로 유지하면서 직류 바이어스 전력을 30 W (900 V, 0.02 A) 인가하고, $N_2$의 유량을 0.5, 1.0, 1.5 SCCM로 변화를 주어 특성을 분석하였다. MID (Multiple Ion Detection) mode에서 유도결합 플라즈마를 이용한 스퍼터-승화 증착 장비를 사용하여 CrN thin flim 성장시켰고, deposition rate은 44.8 nm/min으로 얻을 수 있었다. 또한 $N_2$의 유량이 증가할 수록 bias voltage가 증가하는 것을 확인 할 수 있었다. OES time acquisition을 이용한 공정 분석에서는 $N_2$ 유량을 off 하였을 때 Ar, Cr의 중성 intensity peak이 상승하였고, 시간 경과에 따라 sublimation에 의한 영향이 없는 것을 확인 할 수가 있었다. XRD data에서는 질소 유량이 증가함에 따라 $Cr_2N$이 감소하고, CrN이 증가하는 것을 확인할 수가 있었다. 결정배향성과 Morphology는 다결정 재료의 경도에 영향을 주는 인자이다. CrN 결정 구조의 경우는 (200)면이 경도가 제일 높은데 (200)면에서 성장한 것을 확인 할 수 있었다. 잔류가스 분석 결과로는 일정한 Ar의 유량을 흘렸을 때 $N_2$의 변화량이 비례적인 경향이 보이는 것을 확인 할수 있었다. 또한 $N_2$가 흐르면서도 유도 결합 플라즈마를 이용한 스퍼터-승화 증착 시스템을 사용하면 일정한 공정을 하는 것을 확인 할 수 있었다. 질소의 분압이 유량에 따라서 $3.0{\times}10^{-10}$ Torr에서 $1.65{\times}10^{-9} $Torr까지 일정한 비율로 증가한다. 즉, 이 시스템으로 양산장비 설계를 하여도 가능 하다는 것을 말해준다.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.19-19
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• 2001

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.64 no.4
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• pp.277-280
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• 2015

In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of $300^{\circ}C$ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of $250^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.849-852
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• 2002

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.22-27
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• 1992

Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.89-94
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• 2010

Bi-Te films were processed by coevaporation of Bi and Te dual sources with variations of the mole ratio of the Bi and Te evaporation sources, and thermoelectric properties of the coevaporated Bi-Te films were characterized. The coevaporated Bi-Te films were n-type semiconductors and exhibited Seebeck coefficients of $-60{\sim}-80{\mu}V/K$. The Terich Bi-Te film, processed with Bi and Te dual sources of 30 mol% Bi : 70 mol% Te ratio, exhibited a power factor of $5{\times}10^{-4}W/m-K^2$. On the other hand, a power factor of $17.7{\times}10^{-4}W/m-K^2$ was obtained for the Bi-rich film coevaporated using Bi and Te dual sources of 90 mol% Bi : 10 mol% Te ratio.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.2
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• pp.31-35
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• 2001

The anti-reflective anti-static(ARAS) optical film Was designed using conducting layer $TiN_x$ by Essential Macleod program. From this results, [air ${TiN_x{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The $TiN_x$ thin films were prepared on the glass substrate by RF(radio-freqency) magnetron sputtering apparatus from a Ti target in agaseous mixture of argon and nitrogen with the thickness of 7~10 nm. For the films obtained, the chemical binding energy of the films was investigated by x-ray photoelectron spectroscopy(XPS) in order to analyze the chemical nature and composition of the films. In addition, we investigated the relationship between the surface resistance and the chemical nature the sheet resistance and XPS depth profiling the chemical binding of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.83-87
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• 2002

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride ($SiN_X$) is widely used as a gate dielectric material for the hydrogenated amorphous silicon(a-Si:H) thin film transistors (TFT's). We investigated $SiN_X$ films were deposited PECVD at low temperature ($300^{\circ}C$). The reaction gases were used pure nitrogen and a helium diluted of silane gas(20% $SiH_4$, 80% He). Experimental investigations were carried out with the variation of $N_2/SiH_4$ flow ratios from 3 to 50 and the rf power of 200 W. This article presents the $SiN_X$ gate dielectric studies in terms of deposition rate, hydrogen content, etch rate and C-V, leakage current density characteristics for the gate dielectric layer of thin film transistor applications. Electrical properties were analyzed through high frequency (1MHz) C-V and current-voltage (I-V) measurements. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.15-22
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• 2012

A low power consumption scan driver using depletion-mode n-type InGaZnO thin-film transistors is proposed. The proposed circuit uses 2 clock signals and generates the non-overlap output signals without the additional masking signals and circuits. The power consumption of the proposed circuit is decreased by reducing the number of the clock signals and short circuit current. The simulation results show that the proposed circuit operates successfully when the threshold voltage of TFT is varied from -3.0V to 1.0V. The proposed scan driver consumes 4.89mW when the positive and negative supply voltage is 15V and -5V, respectively, and the operating frequency is 46KHz on the XGA resolution panel.