• Title/Summary/Keyword: W-CDMA R5

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A Study on Validity of Interconnection Policy Revision with the Advent of 3G Mobile Network (3G 이동통신망 출현에 따른 접속료 정책의 개정 타당성에 관한 연구)

  • Lee, Sang-Yeop;Park, Myeong-Cheol;Hyun, Tchang-Hee
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.12B
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    • pp.1099-1111
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    • 2006
  • As W-CDMA R5(HSDPA) service became recently commercialized in Korea, there is increasing demand for new pricing methodology for the 3G mobile interconnection at the earliest possible time. However, it is hard to find any case of systematic study on it. In this paper, a synthetic investigation into the three aspects of new mobile telecommunication service - technology, market, and regulation - is conducted to verify the validity of new interconnection pricing methodology. As the findings of this research indicate, given the several technological limits of 3G, speed of mobile telecommunication industry evolution, the problem of verifying ex-ante regulations' validity, and the cases of some foreign countries, it is suggested that immediate revision of interconnection policy is not sensible and that the revision is more desirable to be postponed until the maturity of the 3G market or the adoption of All-IP network.

Performance Enhancement of 3-way Doherty Power Amplifier using Gate and Drain bias control (Gate 및 Drain 바이어스 제어를 이용한 3-way Doherty 전력증폭기와 성능개선)

  • Lee, Kwang-Ho;Lee, Suk-Hui;Bang, Sung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.48 no.1
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    • pp.77-83
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    • 2011
  • In this thesis, 50W Doherty amplifier was designed and implemented for Beyond 3G's repeater and base-station. Auxiliary amplifier of doherty amplifier was implemented by Gate bias control circuit. Though gate bias control circuit solved auxiliary's bias problem, output characteristics of doherty amplifier was limited. To enhance the output characteristic relativize Drain control circuit And To improve power efficiency make 3-way Doherty power amplifier. therefore, 3-way GDCD (Gate and Drain bias Control Doherty) power amplifier is embodied to drain bias circuit for General Doherty power amplifier. The 3-way GDCD power amplifier composed of matching circuit with chip capacitor and micro strip line using FR4 dielectric substance of specific inductive capacity(${\varepsilon}r$) 4.6, dielectric substance height(H) 30 Mills, and 2.68 Mills(2 oz) of copper plate thickness(T). Experiment result satisfied specification of amplifier with gains are 57.03 dB in 2.11 ~ 2.17 GHz, 3GPP frequency band, PEP output is 50.30 dBm, W-CDMA average power is 47.01 dBm, and ACLR characteristics at 5MHz offset frequency band station is -40.45 dBc. Especially, 3-way DCHD power amplifier showed excellence efficiency performance improvement in same ACLR than general doherty power amplifier.