• Journal of the Korean Society for Heat Treatment
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• v.18 no.5
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.678-684
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• 1998

By means of constant- pressure molecular dynamics simulations, we studied the liquid- glass- crystalline transition of a system composed of Lennard- Jones particles with periodic boundary conditions. Atomic volume and enthalpy were calculated as functions of temperature during heating and cooling processes. The Wendt- Abraham ratio derived from radial distribution function and the angular distribution function characterizing short range order were analyzed to distinguish between liquid, glass and crystalline states. A liquid phase resulting from a slow heating of an initial fee crystal amorphized on fast quench, but it crystallized on slow quench. When slowly heated, the amorphous phase from fast quench crystallized into an fee structure. A system with free surface was shown to melt from the surface inward at a lower temperature than bulk system and to have a strong tendency for crystallization even during a fast quench from a liquid state.

• Metals and materials international
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• v.24 no.6
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• pp.1256-1261
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• 2018

Both thermoplastic formability and electrical conductivity of Al-Ni-Y metallic glass with 12 different compositions have been investigated in the present study with an aim to apply as a functional material, i.e. as a binder of Ag powders in Ag paste for silicon solar cell. The thermoplastic formability is basically influenced by thermal stability and fragility of supercooled liquid which can be reflected by the temperature range for the supercooled liquid region (${\Delta}T_x$) and the difference in specific heat between the frozen glass state and the supercooled liquid state (${\Delta}C_p$). The measured ${\Delta}T_x$ and ${\Delta}C_p$ values show a strong composition dependence. However, the composition showing the highest ${\Delta}T_x$ and ${\Delta}C_p$ does not correspond to the composition with the highest amount of Ni and Y. It is considered that higher ${\Delta}T_x$ and ${\Delta}C_p$ may be related to enhancement of icosahedral SRO near $T_g$ during cooling. On the other hand, electrical resistivity varies with the change of Al contents as well as with the change of the volume fraction of each phase after crystallization. The composition range with the optimum combination of thermoplastic formability and electrical conductivity in Al-Ni-Y system located inside the composition triangle whose vertices compositions are $Al_{87}Ni_3Y_{10}$, $Al_{85}Ni_5Y_{10}$, and $Al_{86}Ni_5Y_9$.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.171-177
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• 2001

The thermal and mechanical properties of amorphous Z $r_{62-x}$N $i_{10}$C $u_{20}$A $l_{8}$ $Ti_{x}$ (x=3, 6, 9at%) alloys were investigated. The crystallization process was confirmed as amorphous longrightarrow amorphous + Z $r_2$A $l_3$+ Zr + (Ni,Ti) longrightarrow Z $r_2$Cu + Al + (Ni,Ti) for 3at%Ti, amorphous longrightarrow amorphous + Al longrightarrow $Al_2$Ti + NiZr + CuTi for 6at%Ti and amorphous longrightarrow amorphous + Zr + Al longrightarrow Zr + $Al_2$Zr + Al $Ti_3$+ CuTi for 9at%Ti. lickers hardness ( $H_{v}$ ) increased with increasing volume fraction( $V_{f}$ ) of pricipitates for all concerned compositions. Tensile fracture strength ($\sigma_{f}$ ) showed a maximum value 1219MPa at $V_{f}$ = 38% for 3at%Ti, 1203MPa at $V_{f}$ = 2% for 6at%Ti and 1350MPa at $V_{f}$ = 5% for 9at%Ti. The $\sigma_{f}$ was rapidly decreased after showing the maximum value. The $V_{f}$ corresponding to rapidly decreased $\sigma_{f}$ coincided with the $V_{f}$ transited from ductile to brittle fracture surface.ace.

• Applied Chemistry for Engineering
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• v.28 no.2
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• pp.214-220
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• 2017

The spherical Al/RDX/AP composites with an average size of $550{\mu}m$ were successfully prepared by drowning-out/agglomeration (D/A) process. The surface morphology and dispersion of Al particles of those composites were investigated using SEM and EDS (energy dispersive spectrometry). As a result of thermal analysis, the onset temperature of thermal decomposition of the Al/RDX/AP composites by the D/A process was found to decrease about $50^{\circ}C$ and their thermal stability was shown to be relatively enhanced due to the increase of activation energy compared to those of using the physical mixing method. In the first decomposition region of AP, Prout-Tompkins model was shown to describe well the thermal decomposition of both composites by the physical mixing and D/A process. On the other hand, in the second decomposition region of AP, the decomposition mechanisms of composites by the physical mixing and D/A process were explained by the zero-order and contracting volume model, respectively.

• Applied Chemistry for Engineering
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• v.18 no.6
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• pp.568-574
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• 2007

Crack-free dried gel monoliths of the composition $Li_2O1{\cdot}7Al_2O_3{\cdot}8.6SiO_2$ have been prepared as a precursor of transparent glass-ceramic by the hydrolysis and polycondensation of mixed metal alkoxides in solutions containing N,N-dimethylformamide as the drying control chemical additive, alcohols, and water. It was investigated that activation energy for gelation according to the variation of water concentration ranged from 13 to 14 kcal/mol. Only when the amount of water for gelation was 3 times higher than the stoichiometric amount, monolithic dry gels were successfully prepared after drying at $70{\sim}75^{\circ}C$ and at a rate of 0.1~0.3%/h. The specific surface area, the pore volume, the average pore diameters of dried gel at $180^{\circ}C$ were about $239.40m^2/g$, 0.001~0.03 mL/g, and $145.62{\AA}$, respectively. It showed that the dried monolithic gel had a porous body. The DTA curve had the first exothermic peak around $800^{\circ}C$ and the 2nd peak around $980^{\circ}C$, which may correspond to crystallization of the gel.

• Journal of the Korean Chemical Society
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• v.51 no.2
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• pp.178-185
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• 2007

Intermediate pentasil borosilicate zeolite-like materials have been crystallized by a novel method named steam-assisted conversion, which involves vapor-phase transport of water. Indeed, amorphous powders obtained by drying Na2O.SiO2.B2O3.TBA2O gels of various compositions using different boron sources are transformed into crystalline borosilicate zeolite belonging to pentasil family structure by contact with vapors of water under hydrothermal conditions. Using a variant of this method, a new material which has an intermediate structure of MFI/MEL in the ratio 90:10 was crystallized. The results show that steam and sufficiently high pH in the reacting hydrous solid are necessary for the crystallization to proceed. Characterization of the products shows some specific structural aspects which may have its unique catalytic properties. X-ray diffraction patterns of these microporous crystalline borosilicates are subjected to investigation, then, it is shown that the product structure has good crystallinity and is interpreted in terms of regular stacking of pentasil layers correlated by inversion centers (MFI structure) but interrupted by faults consisting of mirror-related layers (MEL structure). The products are also characterized by nitrogen adsorption at 77 K that shows higher microporous volume (0.160 cc/g) than that of pure MFI phase (0.119 cc/g). The obtained materials revealed high surface area (~600 m2/g). The infrared spectrum reveals the presence of an absorption band at 900.75 cm-1 indicating the incorporation of boron in tetrahedral sites in the silicate matrix of the crystalline phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.115-121
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• 2012

Sapphire single crystals have been highlighted for epitaxial gallium nitride films in high-power laser and light emitting diode (LED) industries. Among the many crystal growth methods, the Kyropoulos process is an excellent commercial method for growing larger, high-optical-quality sapphire crystals with fewer defects. Because the properties and growth behavior of sapphire crystals are influenced largely by the temperature distribution and convection of molten sapphire during the manufacturing process, accurate predictions of the thermal fields and melt flow behavior are essential to design and optimize the Kyropoulos crystal growth process. In this study, computational fluid dynamic simulations were performed to examine the effects of the crucible geometry aspect ratio on melt convection during Kyropoulos sapphire crystal growth. The results through the evolution of various growth parameters on the temperature and velocity fields and convexity of the crystallization interface based on finite volume element simulations show that lower aspect ratio of the crucible geometry can be helpful for the quality of sapphire single crystal.

• Journal of the Mineralogical Society of Korea
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• v.2 no.2
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• pp.81-89
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• 1989

Alunite occurs as massive, cavity-filling and veinlets in the Cretaceous Hwangsan Formation in the Sungsan mine, Korea. It is a hydrothermal alteration product of rhyolitic tuffs, and associated with dickite, quartz and barite. The average chemical formula of alunite in the mine is $(K_{0.93}Na_{0.07})_{1.00}Al_{3.00}(SO_4)_{2.00}(OH)_6$. Atomic percentage of Na substituting for K in A site of the alunite structure varies from 5.9 to 9.2. Unit-cell volume and c dimension decrease with increasing Na atomic percentage. On the basis of thermal and high temperature XRD analyses, the decomposition of alunite into $KAl(SO_4)_2$ and $NaAl(SO_4)_2$ concomitant with the liberation of structural water (12.86%) occurs at about $550^{\circ}C$. The reconstruction of $KAl(SO_4)_2$ and $NaAl(SO_4)_2$ to $Al_2(SO_4)_3$, arcanite and thenardite, and the crystallization of ${\gamma}-Al_2O_3$ take place at about $720^{\circ}C$. The destruction of $Al_2(SO_4)_3$ structure takes place at about $760^{\circ}C$ removing 3/4 of total $SO_3$ (27.32%).