• Title/Summary/Keyword: Voltage stability index

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On static stability of electro-magnetically affected smart magneto-electro-elastic nanoplates

  • Ebrahimi, Farzad;Barati, Mohammad Reza
    • Advances in nano research
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    • v.7 no.1
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    • pp.63-75
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    • 2019
  • This article represents a quasi-3D theory for the buckling investigation of magneto-electro-elastic functionally graded (MEE-FG) nanoplates. All the effects of shear deformation and thickness stretching are considered within the presented theory. Magneto-electro-elastic material properties are considered to be graded in thickness direction employing power-law distribution. Eringen's nonlocal elasticity theory is exploited to describe the size dependency of such nanoplates. Using Hamilton's principle, the nonlocal governing equations based on quasi-3D plate theory are obtained for the buckling analysis of MEE-FG nanoplates including size effect and they are solved applying analytical solution. It is found that magnetic potential, electric voltage, boundary conditions, nonlocal parameter, power-law index and plate geometrical parameters have significant effects on critical buckling loads of MEE-FG nanoscale plates.

Wave propagation simulation and its wavelet package analysis for debonding detection of circular CFST members

  • Xu, Bin;Chen, Hongbing;Xia, Song
    • Smart Structures and Systems
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    • v.19 no.2
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    • pp.181-194
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    • 2017
  • In order to investigate the interface debonding defects detection mechanism between steel tube and concrete core of concrete-filled steel tubes (CFSTs), multi-physical fields coupling finite element models constituted of a surface mounted Piezoceramic Lead Zirconate Titanate (PZT) actuator, an embedded PZT sensor and a circular cross section of CFST column are established. The stress wave initiation and propagation induced by the PZT actuator under sinusoidal and sweep frequency excitations are simulated with a two dimensional (2D) plain strain analysis and the difference of stress wave fields close to the interface debonding defect and within the cross section of the CFST members without and with debonding defects are compared in time domain. The linearity and stability of the embedded PZT response under sinusoidal signals with different frequencies and amplitudes are validated. The relationship between the amplitudes of stress wave and the measurement distances in a healthy CFST cross section is also studied. Meanwhile, the responses of PZT sensor under both sinusoidal and sweep frequency excitations are compared and the influence of debonding defect depth and length on the output voltage is also illustrated. The results show the output voltage signal amplitude and head wave arriving time are affected significantly by debonding defects. Moreover, the measurement of PZT sensor is sensitive to the initiation of interface debonding defects. Furthermore, wavelet packet analysis on the voltage signal under sweep frequency excitations is carried out and a normalized wavelet packet energy index (NWPEI) is defined to identify the interfacial debonding. The value of NWPEI attenuates with the increase in the dimension of debonding defects. The results help understand the debonding defects detection mechanism for circular CFST members with PZT technique.

A Study on Alkali ion-Sensitivity of $Si_{x}O_{y}N_{z}$ Fabricated by Low Pressure Chemical Vapor Deposition (저압화학기상 성장법으로 제작된 $Si_{x}O_{y}N_{z}$의 알칼리이온 감지성에 관한 연구)

  • Shin, P.K.;Lee, D.C.
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.200-206
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    • 1997
  • Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

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Development of Equipment to Measure Insulation Resistance and Evaluate the Lifetime of High-voltage Cable in Operation (운전 중인 고전압 케이블의 절연저항 측정 및 수명평가장치의 개발)

  • Um, Kee-Hong;Lee, Kwan-Woo
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.14 no.5
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    • pp.237-242
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    • 2014
  • In this paper, we find out the lifetime index in order to determine the time-dependent trend of deteriorating performance of 6.6kV high-voltage power cable in operation at a power station. The cable systems used in our study have been in operation for 13 years. With measurements for the 13 years, we analyzed the insulation resistances. By developing measuring equipment (comprized mainly of transformer, temperature sensor, and LPF) operating by the three-phase electric power, we analyzed the changing characteristics of insulation resistance of power cable. In contrast to 22kV cables, 6.6 kV cables have thicker insulation. Therefore the characteristics of 6.6kV cables are different from that of 22kV cables. The study found that as time passes, the insulation resistance does not decrease continuously; it decreases to a certain value, then does not decrease any more and shows properties of oscillation. We could not detect the process of deterioration in the preceding twelve years. The cable system showed great stability so that deterioration was not apparent. In this case, it is not possible to measure the future life indices of power cables because the lifetime indices are not predictable

Optimal Location of FACTS Devices Using Adaptive Particle Swarm Optimization Hybrid with Simulated Annealing

  • Ajami, Ali;Aghajani, Gh.;Pourmahmood, M.
    • Journal of Electrical Engineering and Technology
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    • v.5 no.2
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    • pp.179-190
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    • 2010
  • This paper describes a new stochastic heuristic algorithm in engineering problem optimization especially in power system applications. An improved particle swarm optimization (PSO) called adaptive particle swarm optimization (APSO), mixed with simulated annealing (SA), is introduced and referred to as APSO-SA. This algorithm uses a novel PSO algorithm (APSO) to increase the convergence rate and incorporate the ability of SA to avoid being trapped in a local optimum. The APSO-SA algorithm efficiency is verified using some benchmark functions. This paper presents the application of APSO-SA to find the optimal location, type and size of flexible AC transmission system devices. Two types of FACTS devices, the thyristor controlled series capacitor (TCSC) and the static VAR compensator (SVC), are considered. The main objectives of the presented method are increasing the voltage stability index and over load factor, decreasing the cost of investment and total real power losses in the power system. In this regard, two cases are considered: single-type devices (same type of FACTS devices) and multi-type devices (combination of TCSC, SVC). Using the proposed method, the locations, type and sizes of FACTS devices are obtained to reach the optimal objective function. The APSO-SA is used to solve the above non.linear programming optimization problem for better accuracy and fast convergence and its results are compared with results of conventional PSO. The presented method expands the search space, improves performance and accelerates to the speed convergence, in comparison with the conventional PSO algorithm. The optimization results are compared with the standard PSO method. This comparison confirms the efficiency and validity of the proposed method. The proposed approach is examined and tested on IEEE 14 bus systems by MATLAB software. Numerical results demonstrate that the APSO-SA is fast and has a much lower computational cost.

$TiO_2$ Thin Film Patterning on Modified Silicon Surfaces by MOCVD and Microcontact Printing Method

  • 강병창;이종현;정덕영;이순보;부진효
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.77-77
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    • 2000
  • Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

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