• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.9
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• pp.25-31
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• 2008

The field of induction motor is magnetized and demagnetized for each reversal of the current. This field component of the motor accounts for most of the reactive component of inductive load. Reactive power needs to sustain the electromagnetic field required for the induction motor to operate. Power factor of induction motor is usually low and power factor correction needs. Power factor becomes low by the effect of the reduction operation of load capacity. In most cases, Capacitor capacity for the power factor correction should be complied with the recommendation by the motor capacity. But Capacitor value for power factor correction can't change during the normal operation. In this paper, we analyzed characteristics of power and power factor changing by load fluctuation of low-voltage small size induction motor and show that lower power factor correction's parameter of existing recommendation should be revised by new value.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.229-237
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• 2005

The degradation phenomena in SiGe hetero-junction bipolar transistors(SiGe HBTs) induced by bias stress are investigated in this review. If SiGe HBTs are stressed over a specific time interval, the device parameters deviate from their nominal values due to the internal changes in the devices. Reverse-bias stress on emitter-base(EB) junctions causes base current increase and current gain decrease because carriers accelerated by the electrical field generate recombination centers. When forward-bias current stress is conducted at an ambient temperature above $140^{\circ}C$ , hot carriers produced by Auger recombination or avalanche multiplication induce current gain fluctuation. Mixed-mode stressing, where high emitter current and high collector-base voltage are simultaneously applied to the device, provokes base current rise as EB reverse-bias stressing does.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.46-54
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• 1998

A planar Bi-Sb multijunction thermal converter, which is consisted of a linear or bifilar thin film NiCr-heater and a thin film Bi-Sb thermopile, has been fabricated, and its ac-dc transfer characteristics were examined in a frequency range from 10 Hz to 10 KHz. In order to increase the thermal sensitivity and to decrease the ac-dc transfer error of a thermal converter, the heater and the hot junctions of a thermopile were prepared on a Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-diaphragm which acts as a thermal isolation layer, and the cold junctions on the Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-thin film supported with the silicon rim which functions as a heat sink. The respective thermal sensitivities in air and in a vacuum of the converter with a built-in bifilar heater were about 14.0 ㎷/㎽ and 54.0 ㎷/㎽, and the ac-dc voltage and the current transfer difference ranges in air were about $\pm$0.60 ppm and $\pm$0.11 ppm, respectively, indicating that the ac-dc transfer accuracy of the converter are much higher than that of a commercial 3-dimensional multijunction thermal converter. However, the output thermoelectric voltage fluctuation of the converter was rather high.

• Electrical & Electronic Materials
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• v.12 no.7
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.17-23
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• 2017

Optical current sensors are suitable for operation in high voltage and high current environments such as power plants due to they are not affected by electromagnetic interference and have excellent insulation characteristics. However, as they operate in a harsh environment such as large temperature fluctuation and mechanical vibration, high reliability of the sensor is required. Therefore, many groups have been working on enhancing the reliability. In this work, an integrated optical current sensor incorporating polarization-rotated reflection interferometer is proposed. By integrating various optical components on a single chip, the sensor exhibits enhanced stability as well as the solution for low-cost optical sensors. Using this, we performed the characterization for the actual field application. By using a large power source, the current of 0.3 kA~36 kA was applied to the photosensor and the linear operation characteristics were observed. The error of the sensor was within $0{\pm}.5%$. Even when operating for a long time, the error range of the sensor was kept within $0{\pm}.5%$. In addition, the measurement of the frequency response over the range of 60 Hz to 10 kHz has confirmed that the 3-dB frequency band of the proposed OCT is well over 10 kHz.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.2
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• pp.58-67
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• 1995

The paper describes the variation of magnetic fields caused by the operation of induction motors. The measuring system consists of the self-integrating magnetic field sensor, amplifier, and active integrator. From the calibration experiments, the frequency bandwidth of the magnetic field measuring system ranges from 20[Hz] to 300[kHz] and sensitivity is 0.234(mV/$\mu\textrm{T}$]. The magnetic fields generated under steady state and starting operations of duction motor are recorded by the proposed measuring system, and the fast Fourier transformation(FFT) of the measured data is performed to analyze the harmonic components. A single pulsed magnetic field is strongly caused by direct starting the induction motor, and its peak value is greater than 5 times as compared with the steady state value. The long transient duration and high intensity originates from the large inductance and dynamic characteristic of the induction motor, During the steady state operation of induction motor, subharmonics of magnetic field components, which depend on the pole number of induction motor, are observed. The lower order power-line harmonics can be inferred from the voltage flicker and current ripple which are derived from the torque fluctuation of induction motor. In the case of the induction motor drived by inverter, the harmonics of magnetic field are much more than those caused by direct starting method and are found generally to increase with decreasing the driving frequency.

• Journal of radiological science and technology
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• v.25 no.2
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• pp.47-55
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• 2002

We came to the following conclusion as the results of experiment on the image quality of mammography and the average glandular dose using 4 apparatuses at 3 hospitals in Seoul. 1. Whereas the measurement of half value layer showed no differences among the apparatuses, the measurement by an attenuation curve method showed some differences by 5.9%. There were 9.1% differences in the measurement by aluminum conversion method. 2. The basic density of an automatic exposure control unit must be D = 1.40, but there was no automatic exposure unit adjusted precisely at any hospitals. The unit at the B hospital exceeded the allowable limit by ${\pm}0.15$. 3. In the photographing using an automatic exposure control unit and the management of an automatic film processor using a sensitometer, most automatic film processors were well kept. But in some cases the mean value of a fluctuation coefficient exceeded the allowable limit. There is a need for more cautious management. 4. The image quality of breast phantom photography was affected by the screen/film system among the hospitals. 5. The average glandular dose at a breast of 4.2 cm thickness depended on the tube voltage, In the case of Mo/Mo, it was measured $0.26{\sim}1.39\;mGy$ less than ACR standard 3.0 mGy.