• Advances in nano research
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• 제7권1호
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• pp.63-75
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• 2019

This article represents a quasi-3D theory for the buckling investigation of magneto-electro-elastic functionally graded (MEE-FG) nanoplates. All the effects of shear deformation and thickness stretching are considered within the presented theory. Magneto-electro-elastic material properties are considered to be graded in thickness direction employing power-law distribution. Eringen's nonlocal elasticity theory is exploited to describe the size dependency of such nanoplates. Using Hamilton's principle, the nonlocal governing equations based on quasi-3D plate theory are obtained for the buckling analysis of MEE-FG nanoplates including size effect and they are solved applying analytical solution. It is found that magnetic potential, electric voltage, boundary conditions, nonlocal parameter, power-law index and plate geometrical parameters have significant effects on critical buckling loads of MEE-FG nanoscale plates.

• Smart Structures and Systems
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• 제19권2호
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• pp.181-194
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• 2017

In order to investigate the interface debonding defects detection mechanism between steel tube and concrete core of concrete-filled steel tubes (CFSTs), multi-physical fields coupling finite element models constituted of a surface mounted Piezoceramic Lead Zirconate Titanate (PZT) actuator, an embedded PZT sensor and a circular cross section of CFST column are established. The stress wave initiation and propagation induced by the PZT actuator under sinusoidal and sweep frequency excitations are simulated with a two dimensional (2D) plain strain analysis and the difference of stress wave fields close to the interface debonding defect and within the cross section of the CFST members without and with debonding defects are compared in time domain. The linearity and stability of the embedded PZT response under sinusoidal signals with different frequencies and amplitudes are validated. The relationship between the amplitudes of stress wave and the measurement distances in a healthy CFST cross section is also studied. Meanwhile, the responses of PZT sensor under both sinusoidal and sweep frequency excitations are compared and the influence of debonding defect depth and length on the output voltage is also illustrated. The results show the output voltage signal amplitude and head wave arriving time are affected significantly by debonding defects. Moreover, the measurement of PZT sensor is sensitive to the initiation of interface debonding defects. Furthermore, wavelet packet analysis on the voltage signal under sweep frequency excitations is carried out and a normalized wavelet packet energy index (NWPEI) is defined to identify the interfacial debonding. The value of NWPEI attenuates with the increase in the dimension of debonding defects. The results help understand the debonding defects detection mechanism for circular CFST members with PZT technique.

• 센서학회지
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• 제6권3호
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• pp.200-206
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• 1997

열산화시킨 실리콘 웨이퍼 위에 저압화학기상성장법으로 $SiCl_{2}H_{2}$, $NH_{3}$ 및 $N_{2}O$ 기체를 사용하여 실리콘 옥시나이트라이드($Si_{x}O_{y}N_{z}$) 층을 제작하였다. 세 가지의 다른 조성이 기체 유속비($NH_{3}/N_{2}O$)를 각기 0.2, 0.5 및 2로 변화시키고 $SiCl_{2}H_{2}$의 기체 유속은 고정시킴으로써 얻어졌다. 엘립소메트리와 HFCV(High Frequency Capacitance-Voltage) 측정법을 채택하여 굴절율, 유전율 및 조성의 차이를 각각 조사했다. 실리콘 옥시나이트라이드는 내부에 포함된 실리콘 나이트라이드 성분량에 관계없이 용액 중에서 순수한 실리콘 나이트라이드와 유사한 안정성을 보유했다. 실리콘 옥시나이트라이드 층 알칼리이온 감지성의 크기 순서는 실리콘 나이트라이드 성분량에 영향을 받았다. 보다 나은 알칼리이온 감지성이 실리콘 옥시나이트라이드의 벌크 내에 있는 실리콘 디옥시드의 성분량을 증가시킴으로써 얻어졌다.

• 한국인터넷방송통신학회논문지
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• 제14권5호
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• pp.237-242
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• 2014

이 논문은 발전소에서 설치 운전 중인 6.6kV 고전압 케이블이 시간에 따라 성능이 악화되는 현상의 추세를 결정하는 수명지수를 파악하기 위한 논문이다. 우리가 연구한 케이블 시스템은 설치 후 13 년 동안 운전하고 있다. 삼상전력에 연결되는 변류기, 온도센서 LPF 등을 이용한 측정장치를 개발하여 케이블의 절연저항 변화 특성을 해석하였다. 고전압 22kV 케이블과 비교하면 절연체의 두께가 더 두껍기 때문에 특성을 다르게 나타낸다. 동작시간이 경과함에 따라, 절연저항이 계속 감소하지 않음을 확인 하였다. 일정한 값으로 감소하다가 더 이상 감소하지 않고 상하진동하는 특성을 나타내었다. 지난 13 년 동안의 열화과정을 파악할 수 없었지만, 시스템이 안정 상태에서 동작을 하였다는 사실은 열화가 아직 발생하지 않았다는 의미이다. 이런 경우에는, 수명지수를 예측할 수 없기 때문에 케이블의 수명을 정량적으로 예측할 수 없음을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제5권2호
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• pp.179-190
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• 2010

This paper describes a new stochastic heuristic algorithm in engineering problem optimization especially in power system applications. An improved particle swarm optimization (PSO) called adaptive particle swarm optimization (APSO), mixed with simulated annealing (SA), is introduced and referred to as APSO-SA. This algorithm uses a novel PSO algorithm (APSO) to increase the convergence rate and incorporate the ability of SA to avoid being trapped in a local optimum. The APSO-SA algorithm efficiency is verified using some benchmark functions. This paper presents the application of APSO-SA to find the optimal location, type and size of flexible AC transmission system devices. Two types of FACTS devices, the thyristor controlled series capacitor (TCSC) and the static VAR compensator (SVC), are considered. The main objectives of the presented method are increasing the voltage stability index and over load factor, decreasing the cost of investment and total real power losses in the power system. In this regard, two cases are considered: single-type devices (same type of FACTS devices) and multi-type devices (combination of TCSC, SVC). Using the proposed method, the locations, type and sizes of FACTS devices are obtained to reach the optimal objective function. The APSO-SA is used to solve the above non.linear programming optimization problem for better accuracy and fast convergence and its results are compared with results of conventional PSO. The presented method expands the search space, improves performance and accelerates to the speed convergence, in comparison with the conventional PSO algorithm. The optimization results are compared with the standard PSO method. This comparison confirms the efficiency and validity of the proposed method. The proposed approach is examined and tested on IEEE 14 bus systems by MATLAB software. Numerical results demonstrate that the APSO-SA is fast and has a much lower computational cost.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.