• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.301-305
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• 2008

An organic light-emitting diode(OLED) has advantages of low power driving, self light-emitting, wide viewing angle, excellent high resolution, full color, high reproduction, fast response speed, simple manufacturing process, or the like. However, there are still a number of challenges to get over in order to put it to practical use as a high performance display. First of all, the most important thing is to improve the efficiency of the OLED element in order to commercialize it. To this end, its efficiency can be improved by lowering the driving voltage through the improvement of structure of the OLED element and the application of new organic substance. Therefore, in this study, we have manufactured a red OLED element by applying fluorescent dyes to the emitting layer of the element having the structure of ITO/TPD/Znq2+DCJTB/Znq2/Al and the structure of ITO/CuPc/NPB/Alq3+DCJTB/Alq3/Al, in order to light-emitting various colors or improve the brightness and the efficiency, and then we have evaluated its electrical and optical characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.42-45
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• 2009

We report simple structure red phosphorescent devices comprising only single organic layer structure. Maximum current efficiency of 9.44 cd/A and the driving voltage of 5.4 V are obtained in this single layer structure PHOLEDs, respectively. The mixed host system using electron transporting and hole transporting materials doped with $Ir(piq)_3$ provides such high efficiency and reasonable driving voltage. The principal to simplification is the direct charges injection from the metallic electrodes into mixed host materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.636-639
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• 2007

We have developed novel bipolar host materials, designed to have both electron transporting and hole transporting abilities, which show significant increase in luminance efficiency and decrease in driving voltage of green phosphorescent OLEDs. In case of the best host material, CheilGH-3, the driving voltage was decreased 27 % at a given constant luminance of $1000cd/m^2$. Also the luminance efficiency was enhanced 44 % and the power efficiency was almost doubled compared to the reference device using CBP as a host.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.625-627
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• 2007

We demonstrated high power efficiency and long lifetime in organic light-emitting diode (OLED) using new electron transport materials (ETMs). Electroluminescent device with these ETMs showed lower driving voltage than that with $Alq_3$. The device lifetime with a new ETM was 2 times longer than that with $Alq_3$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.30-33
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• 2008

Using a $Ir(ppy)_3$ doped in hole and electron transport host materials, simple three layers green PHOLEDs comprising double emissive layers have been fabricated. A low driving voltage value of 3.3 V to reach a luminance of $1000\;cd/m^2$ and maximum current- and power-efficiency values of 53.9 cd/A and 57.8 lm/W are demonstrated in this simple structure phosphorescent OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1424-1427
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• 2005

In this paper, we studied on the application of Organic Thin Film Transistors (OTFTs) to the active matrix organic light emitting diodes (AMOLED). We designed organic transistor based pixel circuits for AMOLED. The pixel circuit is consisted of two-transistor, one-capacitor and one-OLED. We report the simulation results of the pixel circuits that OLED current varied as the data line and scan line voltage. Also, we will describe the fabrication process of the Pentacene OTFTs arrays and the organic light emitting diodes. The driving results of the fabricated unit pixels and their 4x4 arrays are also presented.

• ETRI Journal
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• v.31 no.6
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• pp.642-646
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• 2009

Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.143-147
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• 2010

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses of N,N'-dicarbazolyl-3,5-benzene (mCP) host layers doped with bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^{2'}$]picolmate (FIrpic) guest materials. The thicknesses of mCP:FIrpic layers were 5, 10, and 30 nm. Driving voltage, current and power efficiencies were investigated. The current efficiency was higher in the 10 nm thick mCP:FIrpic device, resulting from the better electron-hole balance. The device with 10 nm mCP:FIrpic layer exhibited the maximum current efficiency of 22.5 cd/A and power efficiency of 7.4 lm/W at a luminance of 1000 cd/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1466-1469
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• 2008

We have fabricated 2.5 inch QQCIF AM-OLED panel driven by ZnO-TFT on a plastic substrate for the first time. The number of photo mask for the whole panel process was 5 and the TFT structure was top gate with active protection layer as a first gate insulator. Optimizing the process for the substrate buffer layer, active layer, ZnO protection layer, and gate insulator was key factor to achieve the TFT performance enough to drive OLED. The ZnO TFT has mobility of $5.4\;cm^2/V.s$, turn on voltage of -6.8 V, sub-threshold swing of 0.39 V/decade, and on/off ratio of $1.7{\times}10^9$. Although whole process temperature is below $150^{\circ}C$ to be suitable for the plastic substrate, performance of ZnO TFT was comparable to that fabricated at higher temperature on the glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.781-785
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• 2009

We have fabricated simple triple-layer blue-emitting phosphorescent organic light emitting diodes (OLEDs) using different thicknesses (25 and 55 nm) of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) electron transport layers. 1,1-bis[4-bis (4-methylphenyl)- aminophenyllcyclohexane (TAPC), bis[(4,6-di-fluorophenyl)-pyridinate-$N,C^{2'}$]picolinate (FIrpic) and N,N' -dicarbazolyl-3,5-benzene (mCP) were used as hole transport, blue guest and host materials, respectively. The driving voltage, electroluminescence (EL) efficiency and emission characteristics of devices were investigated. The maximum EL efficiency was 20 cd/A in the device with 55 nm BCP layer, which efficiency was about 33% higher than the device with 25 nm BCP layer. The higher efficiency in the 55 nm BCP device resulted from the enhanced electron-hole balance. In the EL spectrum of blue phosphorescent OLED with BCP layer, the relative intensity between 470 and 500 nm peaks was related to the location of emission zone.