• 제목/요약/키워드: Visible Intensity

검색결과 256건 처리시간 0.032초

Influence of Ne-Xe Gas Mixture Ratio on the Extreme Ultraviolet (EUV) Emission Measurement from the Coaxially Focused Plasma

  • Lee, Sung-Hee;Hong, Young-June;Choi, Duk-In;Uhm, Han-Sup;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.220-220
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    • 2011
  • The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

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Measurement of EUV Emission and its Plasma Parameters Generated from the Coaxial Plasma Focus of Mather and Hypocycloidal Pinched Electrodes

  • Lee, Sung-Hee;Lee, Kyung-Ae;Hong, Young-June;Uhm, Han-Sup;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.332-332
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    • 2011
  • The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

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청색(靑色) 사파이어의 열처리(熱處理)와 분광학적(分光學的) 특성(特性) (Heat Treatment and UV-Spectral Characteristics of Blue Sapphires from Shantung, China)

  • 나경주;김원사;김문영;배인국;장영남
    • 자원환경지질
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    • 제26권1호
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    • pp.107-114
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    • 1993
  • For the blue sapphires from Santung, China, the color change before and after has been investigated by UV-Visible spectrophotometry method. The blue sapphires from Shantung show four groups of absorption bands: the bands A (374, 386 and 450 nm) being attributed to single $Fe^{3+}$ ion, the band B (560, 579 and $704n{\breve{m}}$) to $Fe^{2+}$/$Ti^{4+}$ pairs, the band C (-800 nm) to $Fe^{2+}$/$Fe^{3+}$ pairs, and the D (528 nm) to $Ti^{3+}$ dd transitions. From those UV-VIS characteristics the origin of blue color of the sapphires is confirmed to be attributed by the factors such as $Fe^{2+}$/$Fe^{3+}$ and $Ti^{3+}$/$Ti^{4+}$. The absorption spectra of natural blue sapphires before and after heat treatment show distintive features, comparing with those of sapphires from other localities: the bands of 689 nm and of $Cr^{3+}$ are not recorded on the spectra of sapphires from Shantung. The band (492 nm), which resulted from $Ti^{3+}$, is not shown and the intensity of the band 528 nm decreases after the heat treatment. Decoloration of ink-blue sapphires are found to be successful by heat treatment with the control of annealing and atmosphere. During the diffusion process the excess components of impurities contained originally in the host crystal were expelled to the surface of crystals, enhancing the transparency of the crystals noticeably.

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Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

  • Kim, Soaram;Nam, Giwoong;Park, Hyunggil;Yoon, Hyunsik;Lee, Sang-Heon;Kim, Jong Su;Kim, Jin Soo;Kim, Do Yeob;Kim, Sung-O;Leem, Jae-Young
    • Bulletin of the Korean Chemical Society
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    • 제34권4호
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    • pp.1205-1211
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    • 2013
  • The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

A Study on Thermal Stability of Ga-doped ZnO Thin Films with a $TiO_2$ Barrier Layer

  • Park, On-Jeon;Song, Sang-Woo;Lee, Kyung-Ju;Roh, Ji-Hyung;Kim, Hwan-Sun;Moon, Byung-Moo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.434-436
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    • 2013
  • Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

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Enhanced Hydrogen Production from Methanol/Water Photo-Splitting in TiO2 Including Pd Component

  • Kwak, Byeong-Sub;Chae, Jin-Ho;Kim, Ji-Yeon;Kang, Mi-Sook
    • Bulletin of the Korean Chemical Society
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    • 제30권5호
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    • pp.1047-1053
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    • 2009
  • The future use of hydrogen as an energy source is expected to increase on account of its environmentally friendliness. In order to enhance the production of hydrogen, Pd ions (0.01, 0.05, 0.1, and 0.5 mol%) were incorporated $TiO_2$ (Pd-$TiO_2$) and used as a photocatalyst. The UV-visible absorbance decreased with increasing level of palladium incorporation without a wavelength shift. Although all the absorption plots showed excitation characteristics, there was an asymmetric tail observed towards a higher wavelength caused by scattering. However, the intensity of the photoluminescence (PL) curves of Pd-$TiO_2$ was smaller, with the smallest case being observed at 0.1 and 0.5 mol% Pd-$TiO_2$, which was attributedto recombination between the excited electrons and holes. Based on these optical characteristics, the evolution of $H_2$ from methanol/water (1:1) photo-splitting over Pd-$TiO_2$ in the liquid system was enhanced, compared with that over pure $TiO_2$. In particular, 2.4 mL of $H_2$ gas was produced after 8 h when 0.5 g of a 1.0 mol% Pd-$TiO_2$ catalyst was used. $H_2$ was stably evolved even after 28 h without catalytic deactivation, and the amount of $H_2$ produced reached 14.5 mL after 28 h. This is in contrast to the case of the Pd 0.1 mol% impregnated $TiO_2$ of $H_2$ evolution of 17.5 mL due to the more decreasedelectron-hole recombination.

Effect of Ambient Gases on the Characteristics of ITO Thin Films for OLEDs

  • Lee, Yu-Lim;Lee, Kyu-Mann
    • Transactions on Electrical and Electronic Materials
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    • 제10권6호
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    • pp.203-207
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    • 2009
  • We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

메나디온에 의한 혈소판 내 칼슘 변화측정시 형광 색소 사용의 문제점 (Infeasibility of Measuring $Ca^{2+}$ in Menadione-Exposed Platelets Using Fluorescent Dyes)

  • 정선화;이무열;이주영;정승민;정진호
    • 약학회지
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    • 제41권6호
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    • pp.749-755
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    • 1997
  • It has been reported that dose-dependent $Ca^{2+}$ increase by menadione in platelets could be measured by fluorescent dye, quin-2. The problems will be described here rel ating to measuring $Ca^{2+}$ in menadione-exposed platelets using fura-2 and fluo-3, widely used fluorescent indicators. Additions of menadione to fura-2 loaded platelets and their lysates resulted in marked reduction in fluorescence intensity at both 340nm ($Ca^{2+}$-unbound form) 380nm ($Ca^{2+}$-undbound form) excitation wavelengths. Fura-2 excitation spectra were overlapped with UV-visible absorption spectra of menadione, suggesting that light absorption by menadione itself could quench fluorescence generated by fura-2. Next approach was to use fluo-3 which has the higher wavelength (490nm) of excitation. Previous work demonstrated that treatment with probenecid to platelets was required to prevent fluo-3 dye leakage. However, probenecid itself was proven to be inadequate to measure the concentration of intracellular $Ca^{2+}$; by reducing menadione-induced cytotoxicity in platelets. Our results suggest that it is not feasible to measure $Ca^{2+}$ in platelets by using fura-2 and fluo-3 in the presence of probenecid, and cautions should be taken to measure changes of intracellular $Ca^{2+}$ levels by fluorescent dyes following chemical exposure.

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전자빔 처리된 다이아몬드의 분광학적 특성 연구 (Study on the Spectroscopic Characteristics of Irradiated Diamonds)

  • 손수학;김배섭;장윤득;김종랑;김종근;김정진
    • 한국광물학회지
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    • 제22권4호
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    • pp.407-415
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    • 2009
  • 전자빔 조사를 조사량에 따라 단계별로 수행하면서 전자빔을 조사하는 동안 다이아몬드 내에서 일어나는 질소관련 결함의 변화와 색상의 변화를 분광학적 방법으로 측정 분석하였다. 일반적으로 질소의 양이 적을수록 공공이 쉽게 생성되며 A집합체보다 B집합체가 많은 시료에서 공공이 빠르게 생성된다는 결과를 보였다. 그 이유로 공공의 생성 정도가 전자빔에 의해 파괴될 수 있는 크기를 가진 결함의 양 즉, platelets에 비례한다는 결론을 추론할 수 있었다. 그리고 조사량이 증가할수록 옅은 녹색을 지닌 청색에서 짙은 청색으로 변화한다. 이러한 청색의 발현은 GR1센터의 점진적인 증가로 GR1센터 흡수포논에 의한 흡수띠의 영역은 더욱 확장되어 가시광선이 투과하는 최고 파장대가 530 nm에서 500 nm로 이동하면서 나타나는 현상이다.

CVD법을 이용한 보론 포스파이드의 저온 층착과 특성에 관한 연구 (A Study on the Deposition of Boron Phosphide at the Low Temperature using CVD Method and its Characteristics)

  • 윤여철;김순영;박윤권;강재경;김철주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.103-107
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    • 2000
  • Boron Phosphide films were deposited on the glass substrate at the low temperature, 55$0^{\circ}C$, by the reaction of B$_2$H$_{6}$ with PH$_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 50 $m\ell$/min for B$_2$H$_{6}$, 50 $m\ell$/min for PH$_3$ $m\ell$/min and 1.5 $\ell$/min for $N_2$. To investigate the annealing effect, the films were annealed for 1hour, 3hours in $N_2$ambient at 55$0^{\circ}C$ and tested. The deposition rate was 1000$\AA$/min and the refractive index of film was 2.6. The measurement of X-RD shows that the films have the preferred orientation of (1 0 1) and the intensity of the peak for (1 0 1) orientation decreases according to the annealing time. The data of VIS spectrophotometer proved that the films are transparent in the visible range and the maximal transmittance increases according to the annealing time; 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3hrs-annealed. The measurement of AFM shows that the average surface roughness increases according to the annealing time; 73$\AA$ for as-deposited, 88.9$\AA$ for 1hr-annealed and 220$\AA$ for 3hrs-annealed. Also, The data of the secondary electron emission rate(Υ) shows that the secondary electron emission rate increases according to the annealing time; 0.317 for 1hr-deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The measurement of FT-IR that the characteristic of transmittance in the infrared range was stabilized through annealing.ing.

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