• Title/Summary/Keyword: Vertical Channel

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An Experimental Study on the Variation of Vertical Dispersion within Boundary Layer with Surface Roughness (대기 경계층 연직방향 확산의 지면 거칠기에 따른 변화에 관한 실험적 연구)

  • 박옥현;윤창옥
    • Journal of Korean Society for Atmospheric Environment
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    • v.16 no.3
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    • pp.237-246
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    • 2000
  • An experimental study has been carried out using a rotating water channel in order to investigate the effect of surface roughness on the vertical dispersion of plume within boundary layer. Dispersion measurements of tracers released from two sources with different height at neutral conditions over various rough terrain ranging from rural to urban have been performed. Various values of roughness length were simulated by combining of 4 stream velocities and 3 roughness element conditions. Dispersion measurements have also been made for rough terrain where high buildings are locally concentrated. Values of $\sigma$z increase with roughness and this tendency appears to apply both cases of with and without locally concentrated high buildings. The comparisons of the Bowne's nomogram on $\sigma$2 vs x relationship and the measurements of $\sigma$2 with roughness show good accordance in $\sigma$2 distribution at stability D class over rural, suburban and urban terrain. For constant roughness length the $\sigma$2 values of plumes from lower source height are smaller than those of plumes from higher source at short downwind distance, but this relationship becomes reverse as distance increases. Crossing appears to be made before about 2km. The value of constant I in McMullen's equation $\sigma$2=exp [I+J(In x) + K(In x)2] appears to increase with roughness length, however, the relationships between other constants and roughness have been confirmed. The values of $\sigma$2 for various downwind distances, estimated by using an equation which is employed in ISC (Industrial Source Complex) dispersion model for areas where high buildings are locally assembled, are in accordance with measurements from water channel experiments.

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A Study on the Channel Length and the Channel Punchthrough of Self-Aligned DMOS Transistor (자기정렬 DMOS 트랜지스터의 채널 길이와 채널 Punchthrough에 관한 고찰)

  • Kim, Jong-Oh;Kim, Jin-Hyoung;Choi, Jong-Su;Yoob, Han-Sub
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1286-1293
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    • 1988
  • A general closed form expression for the channel length of the self-aligned double-diffused MOS transistor is obtained from the 2-dimensional Gaussian doping profile. The proposed model in this paper is composed of the doping concentration of the substrate, the final surface doping concentration and the vertical junction depth of the each double-diffused region. The calculated channel length is in good agreement with the experimental results. Also, the optimum channel structure for the prevention of the channel puncthrough is obtained by the averaged doping concentration in the channel region. A correspondence between the results of device simulation of channel punchthrough and the estimations of simplified model is confirmed.

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A study on the analysis of a vertical V-groove junction field effect transistor with finite element method (유한요소법에 의한 V구JFET의 해석에 관한 연구)

  • 성영권;성만영;김일수;박찬원
    • 전기의세계
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    • v.30 no.10
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    • pp.645-654
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    • 1981
  • A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.

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Numerical and experimental study of the flow characteristics around two vertical cylinders (2개의 수직실린더 주위 유동 특성 연구)

  • Shin Young-S.;Jo Chul-H.;Jeong Uh-C.
    • Proceedings of the KSME Conference
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    • 2002.08a
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    • pp.213-216
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    • 2002
  • In this paper, flow patterns around two vertical cylinders were investigated numerically and experimentally Flow patterns between cylinders are very complex and interative. Changing gaps between cylinders the flow patterns are measured and numerically studied at a fixed comming velocity. The experiment has beeen conducted in circulating water channel with PIV system and manometer, and numerical analysis has been made by F.D.M. and multi block method. The results can be applied in the understanding and design of multiple pile array structures.

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Scour Erosion Around Vertical Embankments and Abutments in a Rectangular Channel (구형수로에서 연직 제방 및 교대 부근의 하상 세굴)

  • 박승우
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.28 no.1
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    • pp.41-50
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    • 1986
  • This paper attempts to qualitatively characterize scour erosion processes near USGS constriction type-I structures with vertical embankments and abutments. The scour dimensions and rates of sand beds around the structure models were measured in a rectangular flume. The test results showed that scour took place at a rapid rate at initial stages, which were followed by a stage of slow and general scour with greater extends. The maximum scour depth was observed near upstream corner of embankments. Empirical relationships for scour dimensions were derived, that were based on the results from a dimensional analysis of scour processes.

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Analytical Modeling for Short-Channel MOSFET I-V Characteristice Using a Linearly-Graded Depletion Edge Approximation (공핍층 폭의 선형 변화를 가정한 단채널 MOSFET I-V 특성의 해석적 모형화)

  • 심재훈;임행삼;박봉임;여정하
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.4
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    • pp.77-85
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    • 1999
  • By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

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An Approach for Implementation of Underwater Acoustic Communication Channel using 2-D TLM Modeling and Cross-Correlation Function

  • Park, Kyu-Chil;Yoon, Jong-Rak
    • Journal of information and communication convergence engineering
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    • v.8 no.2
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    • pp.163-167
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    • 2010
  • In underwater acoustic communication, acoustic signals from transducers or hydrophones are used. And the underwater acoustic communication channels are very complicated, because of vertical distribution of acoustic velocity according depths, and reflections from boundaries like as surface or bottom. For the implementation of the underwater acoustic communication channel, the image method or ray tracing method have been used. In this paper, we introduce a new approach for implementation of underwater acoustic communication channel using the simulation of the Transmission Line Matrix Modeling and cross-correlations from the input and output signals.

Some Observations on the Structural Developments of Bubbly Flow : Channel Size Effect

  • Song, Chul-Hwa;Chun, Se-Young;Chung, Moon-Ki;No, Hee-Cheon
    • Proceedings of the Korean Nuclear Society Conference
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    • 1995.10a
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    • pp.321-326
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    • 1995
  • The present study provides some experimental observations on the structural developments of bubbly flow and the void wave damping in vertical, circular channel with a large diameter, and discusses the channel size effect on them. It is observed that the developing mode of bubbly flow structures and its transition mechanism are influenced by the channel size as well as the bubble size, and that they are well revealed in the behavior of wave damping.

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