• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.366-370
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• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

• Journal of IKEEE
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• v.12 no.4
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• pp.255-262
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• 2008

In this paper, we proposed the novel IGBT with an additional n-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed IGBT are caused by an enhanced electron current injection efficiency which is caused by additional n-type MOS structure. In the simulation result, the proposed IGBT has the lower on state voltage of 2.65V and the shorter turn-off time of 4.5us than those of the conventional IGBT(3.33V, 5us).

• Journal of IKEEE
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• v.14 no.1
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• pp.55-64
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• 2010

In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).