• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.267-271
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• 2001

다이오드의 소신호 및 대신호 파라미터 추출은 DC 해석, 외부 기생 소자 추출, 마지막으로 5-파라미터에 의한 내부소자 추출로 이루어진다. DC IV-곡선과 S-파라미터의 curve-fitting으로 내부 파라미터를 구하였고 외부 기생소자는 바이어스에 따라 변하지 성질을 이용하였다. 사용된 소자는 Schottky diode는 SIEMENS사의 BAS125를, Varactor diode는 SONY사의 1t362를, PIN diode는 Hitachi사의 HVM14S를 모델로 사용하였다. 실측을 위해 사용된 소자는 각각 HP사의 HSMS-2822, SONY사의 1t362, HP사의 HSMP-3834을 이용하여 측정하였다.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1986.04a
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• pp.206-210
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• 1986

Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.10
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• pp.1982-1990
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• 1994

We implemented a PLDRO(Phase Locked Dielectric Resonator Oscillator) using the concept of the feedback property of PLL(Phase Locked Loop) for Ku-band(10.95-11.70 GHz). The conventional approaches to a PLDRO design use varactor diode tuning method.. But in theis paper, the PLDRO has the advantage of the frequency sensitivity to changes in the supple voltage of the oscillating device without the frequency-variable part by varactor diode voltage-control. and uses a SPD(Sampling Phase Detector) for phase-comparision. The PLDRO is composed of the DRO phase-locked to the reference signal of UHF band by using a SPD for high frequency stability and can be available for European FSS(Fixed Satellite Service) at 10.00GHz. The PLDRO generates the output power of 8.67 dBm at 10.00 GHz and has a phase noise of -81 dBc/Hz at 10 kHz offset from carrier. The hamonic and spurious characteristics have -42.33 dBc and -65dBc respectively. This PLDRO has much better frequency stability, lower phase noise, and more economical effect for a satellite system than conventional DRO.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.9
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• pp.35-43
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• 2002

In this paper, microstrip ring with a narrow gap is characterized and used as a tunable microwave bandgap (MBG) structure. The center frequency of MBG is mainly determined by the mean circumference of the ring and coincides with odd mode resonance frequency of the ring resonator. The stop band formation by the proposed microstip MBG ring is due to the reflection of electromagnetic waves at the narrow gap introduced in the ring, and the reactive component mounted on the gap makes the stop band vary according to its value. The mounting of capacitor (inductor) is observed to decrease (increase) the center frequency of the stop band. The varactor-mounted microstrip MBG ring is expected to be useful in microwave switches and microwave amplifier circuits.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.141-146
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• 2009

A triangular microstrip antenna with T-shaped slits is proposed for tunable dual-band applications. The proposed antenna is designed using chip capacitors as a prototype. From this result the capacitor can be replaced to a varactor diode to control capacitance value. Since the input impedance of the antenna can be varied with the value of the chip capacitors on the T-shaped slits, the resonant frequency may be changed. The return losses are better than 10 dB at the lower band of $0.78{\sim}1.21$ GHz and 20 dB at the upper band of $1.97{\sim}2.17$ GHz, respectively. This antenna has the bandwidth of about 10 MHz and 50 MHz at each band. The peak gains of the antenna yield 0 dBi at the lower band and 3 dBi at the upper band, respectively. Details of the antenna design are described, and its performances are presented and analyzed.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.4
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• pp.715-720
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• 2012

This study presents a hybrid balanced voltage controlled oscillator (VCO) circuit which is suitable for low phase noise operation at sub-1V supply voltages. Half circuits of the proposed VCO use the varactor-integrated feedback capacitors in their respective circuit. The varactor-integrated feedback capacitors further increase the negative resistance of the equivalent tank thereby ensuring stable start-up of oscillation even at the sub-1V supply voltage. In addition, this work theoretically analyses the phenomenon of the increase of the negative resistance. Simulation results using a $0.18{\mu}m$ RF CMOS technology exhibit the phase noises of -122.4 to -125.5.8 dBc/Hz at 1 MHz offset from oscillation frequency of 4.87 GHz over the supply voltages of 0.6 through 0.9 V.

• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.513-517
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• 2003

In this paper, a VCDRO(Voltage Control Dielectric Resonator Oscillator} applied to X-band as stable source is implementea and constructed with a MESFET for low noise, a dielectric resonator of high frequency selectivity and high Q varactor diode to obtain a good phase noise performance and stable sweep characteristics. The designed circuits is simulated through the harmonic balance simulation technique to provide the optimum performance. The measured results of a fabricated VCDRO show that output is 2.22dBm at 12.05GHz. harmonic suppression -30dBc. phase noise -130dBc at 100kHz offset. and sweep range of varactor diode $\pm$18.7MHz. respectively. This oscillator will be available to X-band application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.852-857
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• 2011

In this paper, the application of a variable characteristic impedance transmission line that can be used to design a dual-band bandpass filter(BPF) is presented. The proposed filter offers a fixed first frequency passband and a controllable second passband. The tuning of the second passband is achieved by varying the characteristic impedance of and open shunt stub line in a stub loaded resonator(SLR) with the help of a defected ground structure(DGS) transmission line and varactor diodes. In order to validate the proposed structure, a two stage dual-band BPF with three transmission zeros was implemeted and experimentally verified based on its theoretical predictions and simulations.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.1
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• pp.7-12
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• 2011

This paper proposes a differential Colpitts-VCO circuit suitable for low phase noise oscillation at the sub-1V supply voltage. Oscillation with low phase noise at the sub-1V supply voltage is facilitated by employing inductors as the current sources of the proposed circuit. One of the two feedback capacitors of the single-ended Colpitts oscillator in the proposed circuit is replaced with the MOS varactor in order to further reduce the resonator loss. Post-layout simulation results using a $0.18{\mu}m$ RF CMOS technology show that the phase noises at the 1MHz offset frequency of the proposed circuit oscillating at the sub-1V supply voltages of 0.6 to 0.9 V are at least 7 dBc/Hz lower than those of the well-known cross-coupled differential VCO.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.5
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• pp.69-76
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• 2004

In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.