• Journal of ILASS-Korea
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• v.5 no.4
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• pp.33-39
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• 2000

The behavior of the 2-stage spray was studied by using the schlieren method with the high pressure common-rail injection system. The spray injected 2 times with the interval of $0.3ms{\sim}1.5ms$ between the 1st and the 2nd spray in a modeled combustion chamber of constant volume bomb. In this case, the quantity of injected fuel of 1st and 2nd also changed. The schlieren photograph shows that the 2nd spray goes further away than the 1st spray when the quantity of the 1st spray is less than that of the 2nd spray. The dispersion of the vapour to the combustion chamber is not affect in a 10% of 1st spray quantity. When the 1st spray quantity is more than the 2nd spray, the vapour scattering of spray is good.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.131-139
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• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.344-348
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• 2004

The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.94-94
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• 1998

최근 a-CH:N (hydrogenated amorphous carbon nitride)가 a-CH 보다 팡학적, 기계객성 질이 우수하므로 이에 대한 연구가 활발하게 진행되고 있다. 본 실험에선 원료 가스의 유량 은 5 sccm으로 고정시킨 채 원료가스내의 질소 대 메탄 혼합비 (N2ICHa)훌 O 에서 4 까지 변 화시 키 띤서 DC saddle-field PECVD (plasma enhanced chemical vapour d야Xlsition)훌 이 용하여 a-CH:N 박막융 제작하여, 가스 혼합비가 박막의 미세구조와 광학척 성질에 미치는 영향올 연구하였다. 박막 성장시 진공조 내의 압력온 throttle valve롤 사용하여 90 mTorr로 일정하게 유지하였으며 양극 전압과 기판전업은 각각 500 V, 200 V로 고청하고 상온에서 중 착하였다. a a -step으로 측정 한 a-C:H:N 박막의 두께는 혼합가스내의 질소의 양이 증가할수륙 4800 A에서 2000 A로 두께가 감소하였지만 표면 rot핑비less는 혼합가스내의 질소의 양이 중가할 수록 중가함을 AFM (atomic force mi$\alpha$'0 scopy) 으로 관찰하였다. 박막내의 C와 N의 정량 분석은 RES (Rutherford back scattering s야ctroscopy) 핵공명법을 이용하여 분석하였다. X XPS (X -ray photoelectron spec$\sigma$oscopy) 와 FT-IR (Fo삐er transform-infrared s spectrometry)로 미세구조률 측정한 결과 혼합가스내의 질소의 양이 충가할수록 C-H기는 감 소하였지 만 C르N, N-H기 는 늘어 났다. 또한 PL (photoluminescence) 측정 결과 웬료가스 내 메탄과 질소의 비율이 1:1일 때 최대의 발광올 보였고 UVS (비없 vi이et spec$\sigma$orne$\sigma$y)으 로 측정한 광학쩍 에너지 캡은 혼합비내의 질소의 양이 증가할수록 2.53 eV에서 2.3 eV로 감 소하였다. 이를 결과로부터 원료가스내의 N2ICHa의 중가에 따른 박막의 미세구조 변화와 광학척 생 질의 상관 관계가 고찰될 것이다.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.