• Composites Research
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• 제29권4호
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• pp.194-202
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• 2016

이차원 구조의 탄소 결합체인 그래핀은 뛰어난 물리적, 화학적 특성으로 인해 미래 전자 소자의 소재로 크게 각광을 받고 있는 물질이다. 따라서, 소자에서 사용된 기판이 그래핀의 물리적 특성에 끼치는 영향에 대한 이해는 그래핀의 응용에 있어서 필수적이며, 그에 대한 연구를 수행하였다. 니켈 (111)과 (100) 결정면에서 각각 성장한 그래핀과 니켈 기판의 상호작용에 대한 연구를 수행함과 동시에, 산화규소 기판으로 전사한 후, 기판과 그래핀과의 상호작용을 라만 분광법을 이용하여 연구하였다. 니켈 기판에서 성장한 그래핀은 기판의 면 방향과 상관없이 기판으로부터 전하의 이동에 따른 도핑효과는 발견되지 않았으며, 산화규소 기판 또한 도핑효과는 없었다. 니켈 기판과 그래핀 사이의 결합력이 그래핀과 산화규소 기판과의 결합력합보다 더 큰 것으로 분석이 되었으며, 니켈에서 성장한 그래핀은 기판의 영향을 받아 수축되어 있었고, 니켈 (100) 면에서는 그래핀이 엇맞음 성장하였음을 확인하였다. 마지막으로, 니켈 (111), (100) 면에서 성장한 그래핀을 산화 규소 기판으로 전사하면 서로 다른 파수 값에서 2D band의 픽이 관측되었다.

• 암석학회지
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• 제8권2호
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• pp.92-105
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• 1999

채약산 현무암질암류는 응회ㅇ마류가 크게 우세하고 3매의 협재된 현무암으로 구성되는데 상위의 건천리층과 하위의 송내동층과는 정합적인 관계를 가진다. 본 현무암은 사장석, 휘석, 각섬석 및 약간의 감람석을 반정으로 함유하는데 주성분상으로는 알카리계열의 특성을 보여주고 유동성이 적은 미량원소의 거동은 칼크알카리계열의 특징을 보존하고 있어서 본암이 칼크알카리계열의 현무암으로 형성된 후 2차적으로 알카리 원소의 부화가 일어났음을 시사한다. 본암은 전박적으로 심하게 스필라이트화하였으나 부분적으로는 그 정도가 미약하거나 쇼쇼나이트질암으로 변질된 부분도 관찰된다. 반정으로 산출되는 각섬석의 Aldldhs이 심하게 스필라이트화된 본역에서도 지질압력계로서 활용될 수 있는지 신중히 검토되어 그 활용이 가능한 것으로 판단되며 압력의 추정은 Johnson and Rutherford(1989)의 압력-AlT 관계식에 적용, 산출하는 것이 가장 타당한 것으로 판단되며 그 결과는 5.7kb로 산축되었는데 이는 본 압층 최하부의 시료에서 얻은 것이므로 본암잉 분출되기 직전의 압력을 대표하는 것으로 해석될 수 있겠으나 온도보정이 불가능한 상황에서 얻은 값이므로 그 신빙도는 다소 낮을 것으로 판단된다. 이 압력과 본암의 반정광물의 입도 및 구성에 관한 사항을 Green(1982)의 염기성 마그마계에 관한 상도에 적용하여 마그마저장고의 형성 후 반정광물의 정출과정을 통한 기원마그마의 진화경로는 마그마저장고가 서서히 상승, 냉각되는 동안에 휘석 $\longrightarrow$ 휘석 및 감람석 $\longrightarrow$ 희석, 감람석 및 각섬석 $\longrightarrow$ 휘석 및 각섬석 $\longrightarrow$ 휘석, 각섬석 및 사장석등의 일연의 결정분화작용과 모암에 의한 혼염작용을 거치면서 진화되었음이 추정된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 한국광물학회지
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• 제19권3호
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• pp.153-162
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• 2006

삼천포 자수정광상은 경상남도 사천시 와룡산에 위치하고 있으며, 자수정에는 4종류(I, II, III 그리고 IV형)의 다양한 유체포유물이 포획되어 있다. I형은 균질화온도 $289{\sim}359^{\circ}C$, 염도 $10{\sim}23wt%;$ II형은 염도 $2{\sim}10wt%$, 균질화온도 $304{\sim}365^{\circ}C;$ III형은 암염을 포함하는 포유물로서 염도 $31{\sim}54wt%$, 균질화온도 $259{\sim}510^{\circ}C;$ IV형은 $CO_{2}$ 성분을 함유하는 포유물로서 균질화온도 $126{\sim}277^{\circ}C$, 염도 $9{\sim}13wt%$을 나타내고 있다. 삼천포 자수정은 뿌리부분에 I, II, III형의 유체포유물이, 상부에는 IV형만이 포획되어 있다. 고상선환경에서 최초로 용리된 IIIa형의 유체포유물은 규산염 용융포유물(melt inclusion)과 공간적으로 연관되어 산출되며, 균질화 과정에서 기포가 암염보다 먼저 사라진다. 이것은 열수가 용리될 때 비교적 고압의 상태에서 포획되었음을 의미한다. 그 후 점차 염도가 낮은 IIIb형, I형, II형이 마그마로부터 용리되고 마지막으로 $CO_{2}$ 성분을 가진 IV형의 유체가 자수정 성장에 관여했음을 알 수 있다. IV형의 열수는 화강암류를 중심으로 순환하고 있던 열수가 퇴적암과의 반응하여 형성된 $CO_{2}$성분을 포획한 것으로 여겨진다. 삼천포 자수정을 배태하는 화강암류는 물에 포화된 서브솔부스(sub-solvus)조건에서 결정화작용이 진행되었으며, 고상선 환경에서 휘발성성분을 다량으로 용리하였다. 그 결과 고상선 온도를 상승시켜, 잔류마그마는 비교적 급냉되어 세립질의 화강암류를 만들었다. 마그마에서 용리된 열수는 정동을 만들었으며, 확보된 공간속에서 자수정 정동을 형성하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 센서학회지
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• 제6권4호
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• pp.328-336
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• 1997

HWE 방법에 의해 CdSe 박막을 (100)방향 Si 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 $600^{\circ}C$, $430^{\circ}C$로하여 성장시킨 CdSe 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 380 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자농도의 In n 대 (1/T)에서 구한 활성화에너지는 0.19eV로 측정되었다. Hall 이동도의 온도 의존성은 30K에서 150K까지는 $T^{3/2}$에 따라 증가하여 불순물산란에 기인하고, 150K에서 293K까지는 $T^{-3/2}$에 따라 감소하여 격자산란에 기인한 것으로 고찰되었다. 광전도셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. Cu 증기분위기에서 열처리한 광전도셀의 경우, 감도(${\gamma}$)는 0.99, pc/dc은 $1.39{\times}10^{7}$, 그리고 최대 허용소비전력(MAPD)은 335mW, 오름시간(rise time)은 10ms, 내림시간(decay time)은 9.5ms로 가장 좋은 광전도 특성을 얻었다.