• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.490-496
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• 2020

A styrofoam box is used as a simple and easy freezing method to preserve animal semen as a livestock genetic source. This study optimized the methods of freezing chikso brindled cattle semen. To test the freezing box, the motility of spermatozoa was compared between two box sizes (length×width×heigh) with the dimensions of 23.5×30.5×22.5 cm and 25.5×46.5×26.5 cm. The motility of thawed sperm from brindled Korean bulls was used to confirm the efficiency of the freezing boxes. The box having a larger inner space with larger horizontal and height measurements supported better motility after thawing (60.4±5.3% vs 67.2±3.1%) with 10 min of exposure time in liquid nitrogen vapor. The optimized freezing space is estimated to be an essential element for successful freezing results and the larger box could be used for production of more than 60 frozen semen straws. These properties are also helpful to optimize the cryopreservation techniques that would control the quality and quantity of semen straws according to different animal species.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.1
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• pp.9-18
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• 2013

Two-phase vapor-liquid flows exist in many shell and tube heat exchangers such as condensers, evaporators, and nuclear steam generators. To understand the fluid dynamic forces acting on a structure subjected to a two-phase flow, it is essential to obtain detailed information about the characteristics of a two-phase flow. The characteristics of a two-phase flow and the flow parameters were introduced, and then, an experiment was performed to evaluate the pressure loss in the tube bundles and the fluid-dynamic force acting on the cylinder owing to the pressure distribution. A two-phase flow was pre-mixed at the entrance of the test section, and the experiments were undertaken using a normal triangular array of cylinders subjected to a two-phase cross-flow. The pressure loss along the flow direction in the tube bundles was measured to calculate the two-phase friction multiplier, and the multiplier was compared with the analytical value. Furthermore, the circular distributions of the pressure on the cylinders were measured. Based on the distribution and the fundamental theory of two-phase flow, the effects of the void fraction and mass flux per unit area on the pressure coefficient and the drag coefficient were evaluated. The drag coefficient was calculated by integrating the measured pressure on the tube by a numerical method. It was found that for low mass fluxes, the measured two-phase friction multipliers agree well with the analytical results, and good agreement for the effect of the void fraction on the drag coefficients, as calculated by the measured pressure distributions, is shown qualitatively, as compared to the existing experimental results.

• Journal of Biosystems Engineering
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• v.43 no.3
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• pp.237-246
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• 2018

Purpose: This study (a) investigated the effect of microwave power intensity and sample thickness on microwave drying characteristics of radish strips, and (b) determined the best-fit drying model for describing experimental drying data, effective moisture diffusivity ($D_{eff}$), and activation energy ($E_a$) for all drying conditions. Methods: A domestic microwave oven was modified for microwave drying and equipped with a small fan installed on the left upper side for removing water vapor during the drying process. Radishes were cut into two fixed-size strip shapes (6 and 9 mm in thickness). For drying experiments, the applied microwave power intensities ranged from 180 to 630 W at intervals of 90 W. Six drying models were evaluated to delineate the experimental drying curves of both radish strip samples. The effective moisture diffusivity ($D_{eff}$) was determined from Fick's diffusion method, and the Arrhenius equation was applied to calculate the activation energy ($E_a$). Results: The drying time was profoundly decreased as the microwave power intensity was increased regardless of the thickness of the radish strips; however, the drying rate of thicker strips was faster than that of the thinner strips up to a certain moisture content of the strip samples. The majority of the applied drying models were suitable to describe the drying characteristics of the radish strips for all drying conditions. Among the drying models, based on the model indices, the best model was the Page model. The range of estimated $D_{eff}$ for both strip samples was from $2.907{\times}10^{-9}$ to $1.215{\times}10^{-8}m^2/s$. $E_a$ for the 6- and 9-mm strips was 3.537 and 3.179 W/g, respectively. Conclusions: The microwave drying characteristics varied depending on the microwave power intensity and the thickness of the strips. In order to produce high-quality dried radish strips, the microwave power intensity should be lower than 180 W.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.49-56
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• 2002

In this study, the InGaP epilayers were grown on the exact and the $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ of cut GaAs substrates by metal-organic vapor phase epitaxy, and the effects of interfacial elastic strains determined by the substrate offcut angle upon the resulting dislocation density of epilayer were investigated for the first time. The elastic strains were obtained from lattice mismatch and lattice misfit by TXRD, and the dislocation densities from epilayer x-ray FWHM. For the offcut angle range used in this study, the elastic strain was maximum and x-ray FWHM minimum at offcut angle $6^{\circ}$. From 11K PL measurements, PL wavelength was found to decrease with an increase of offcut angle. PL intensity was maximum at offcut angle $6^{\circ}$. TEM results showed that the electron diffraction pattern was of typical zincblende structure, and that the dislocation density was minimum for substrate offcut angle $6^{\circ}$. The results obtained in this study, along with the device fabrication process and beam characteristics, clearly demonstrated that the optimum substrate offcut angle for the InGaP/GaAs heterostructures is $6^{\circ}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.270-275
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• 2000

The Pt/YMnO$_3$/Y$_2$O$_3$/Si structure for metal/ferroelectric/insulator/semiconductor(MFIS)-FET was fabricated and effect of $Y_2$O$_3$layer on the properties of MFIS structure was investigated. The $Y_2$O$_3$ thin films on p-type Si(111) substrate deposited by Pulsed Laser Deposition were crystallized along (111) orientation irrespective of the deposition temperatures. Ferroelectric YMnO$_3$ thin films deposited directly on p-type Si (111) by MOCVD resulted in Mn deficient layer between Si and YMnO$_3$. However, YMnO$_3$ thin films having good quality and stoichiometric composition can be obtained by adopting $Y_2$O$_3$ buffer layer. The memory window of the $Y_2$O$_3$thin films with YMnO$_3$ film is greater than that of the YMnO$_3$ thin films without $Y_2$O$_3$ film after the annealing at 85$0^{\circ}C$ in vacuum ambient(100mtorr). The memory window is 1.3V at an applied voltage of 5V.

• Journal of Biosystems Engineering
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• v.25 no.3
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• pp.213-220
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• 2000

Grafting of fruit-bearing vegetables has been widely used to increase the resistance to soil-borne diseases, to increase the tolerance to low temperature or to soil salinity, to increase the plant vigor, and to extend the duration of economic harvest time. After grafting, it is important to control the environment around grafted seedlings for the robust joining of a scion and rootstock. Usually the shading materials and plastic films are used to keep the high relative humidity and low light intensity in greenhouse or tunnel. It is quite difficult to optimally control the environment for healing and acclimation of grafted seedlings under natural light. So the farmers or growers rely on their experience for the production of grafted seedling with high quality. If artificial light is used as a lighting source for graft-taking of grafted seedlings, the light intensity and photoperiod can be easily controlled. The purpose of this study was to develop a prototype system for the graft-taking enhancement of grafted seedlings using artificial lighting and to investigate the effect of air current speed on the distribution of air temperature and relative humidity in a graft-taking enhancement system. A prototype graft-taking system was consisted by polyurethane panels, air-conditioning unit, system controller and lighting unit. Three band fluorescent lamps (FL20SEX-D/18, Kumho Electric, Inc.) were used as a lighting source. Anemometer (Climomaster 6521, KANOMAX), T-type thermocouples and humidity sensors (CHS-UPS, TDK) were used to measure the air current speed, air temperature and relative humidity in a graft-taking system. In this system, air flow acted as a driving force for the diffusion of heat and water vapor. Air current speed, air temperature and relative humidity controlled by a programmable logic controller (UP750, Yokogawa Electric Co) and an inverter (MOSCON-G3, SAMSUNG) had an even distribution. Distribution of air temperature and relative humidity in a graft-taking enhancement system was fairly affected by air current speed. Air current speed higher than 0.1m/s was required to obtain the even distribution of environmental factors in this system. At low air current speed of 0.1m/s, the evapotranspiration rate of grafted seedlings would be suppressed and thus graft-taking would be enhanced. This system could be used to investigate the effects of air temperature, relative humidity, air current speed and light intensity on the evaportranspiration rate of grafted seedlings.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.732-737
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• 2018

We develop a purification process of $Hg_2Br_2$ raw powders using a physical vapor transport(PVT) process, which is essential for the fabrication of a high performance acousto-optic tunable filter(AOTF) module. Specifically, we characterize and compare three $Hg_2Br_2$ powders: $Hg_2Br_2$ raw powder, $Hg_2Br_2$ powder purified under pumping conditions, and $Hg_2Br_2$ powder purified under vacuum sealing. Before and after purification, we characterize the powder samples through X-ray diffraction and X-ray photoelectron spectroscopy. The corresponding results indicate that physical properties of the $Hg_2Br_2$ compound are not damaged even after the purification process. The impurities and concentration in the purified $Hg_2Br_2$ powder are evaluated by inductively coupled plasma-mass spectroscopy. Notably, compared to the sample purified under pumping conditions, the purification process under vacuum sealing results in a higher purity $Hg_2Br_2$ (99.999 %). In addition, when the second vacuum sealing purification process is performed, the remaining impurities are almost removed, giving rise to $Hg_2Br_2$ with ultra-high purity. This high purification process might be possible due to independent control of impurities and $Hg_2Br_2$ materials under the optimized vacuum sealing. Preparation of such a highly purified $Hg_2Br_2$ materials will pave a promising way toward a high-quality $Hg_2Br_2$ single crystal and then high performance AOTF modules.