• Title/Summary/Keyword: Vapor quality

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CVD를 이용한 산화아연 (ZnO) 나노구조 형성 및 특성평가

  • Kim, Jae-Su;Jo, Byeong-Gu;Lee, Gwang-Jae;Park, Dong-U;Kim, Hyeon-Jun;Kim, Jin-Su;Kim, Yong-Hwan;Min, Gyeong-In;Jeong, Hyeon;Jeong, Mun-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.179-179
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    • 2010
  • 1차원 나노구조를 갖는 ZnO를 성장하기 위해 Laser ablation, Chemical vapor deposition (CVD), Chemical transport method, Molecular beam epitaxy, Sputtering 등의 다양한 형성법들이 이용되어지고 있다. 특히 대량생산과 경제성 측면에서 많은 장점을 가지고 있는 CVD를 이용한 ZnO 성장 및 응용 연구가 활발하게 수행되고 있다. 본 연구에서는 Thermal CVD를 이용하여 반응물질과 기판 사이의 거리, 기판온도, $O_2$/Zn 비율 등의 성장변수를 변화시켜 ZnO 나노구조를 성장하고 구조 및 광학적 특성을 연구하였다. Scanning electron microscope를 통한 구조 특성평가 결과 반응물질과 기판 사이의 거리가 13 cm 이하의 조건에서 ZnO 나노구조들은 나노판(Nanosheet)과 나노선(Nanowire)이 혼재하여 성장된 것을 보였다. 그리고 반응물질과 기판사이의 거리가 15 cm 이상부터 나노판이 없어지고 수직한 ZnO 나노막대(Nanorod)가 형성되었다. 상온 Photoluminescence 스펙트럼에서 반응물질과 기판사이의 거리가 5에서 15 cm로 증가할수록 결함 (Defect)에 의해 발생된 515 nm 파장의 최대세기 (Maximum intensity)가 10배 이상 감소한 반면, ZnO 나노구조에 의한 378 nm 파장의 NBE발광 (Near band edge emission)은 8배 이상 증가하였다. 이러한 구조 및 광학적 결과로부터, 질서 없이 성장된 것보다 수직 성장된 ZnO 나노구조의 결정질(Crystal quality)이 좋은 것을 확인하였다. 이를 바탕으로 성장변수에 따른 ZnO 나노구조의 형성 메커니즘을 Zn와 O 원자의 성장거동을 기반으로 한 모델을 이용하여 해석하였다.

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Synthesis and Characterization of Large-Area and Highly Crystalline Molybdenum Disulphide Atomic Layer by Chemical Vapor Deposition

  • Park, Seung-Ho;Kim, Yooseok;Kim, Ji Sun;Lee, Su-Il;Cha, Myoung-Jun;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.287.1-287.1
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    • 2013
  • The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

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Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

  • Kim, Sung-Bock;Bae, Sung-Bum;Ko, Young-Ho;Kim, Dong Churl;Nam, Eun-Soo
    • Applied Science and Convergence Technology
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    • v.26 no.4
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    • pp.79-85
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    • 2017
  • The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

Evaporation Heat Transfer Characteristics of $CO_2$ in a Horizontal Tube

  • Lee Dong-Geon;Son Chang-Hyo;Oh Hoo-Kyu
    • Journal of Advanced Marine Engineering and Technology
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    • v.29 no.3
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    • pp.297-305
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    • 2005
  • The evaporation heat transfer coefficient of $CO_2$ (R-744) in a horizontal tube was investigated experimentally. The experiments were conducted without oil in a closed refrigerant loop which was driven by a magnetic gear pump. The main components of the refrigerant loop are a receiver. a variable-speed pump. a mass flow meter. a pre-heater and evaporator (test section). The test section consists of a smooth. horizontal stainless steel tube of 7.75 mm inner diameter. The experiments were conducted at mass flux of 200 to $500\;kg/m^{2}s$. saturation temperature of $-5^{\circ}C\;to\;5^{\circ}C$. and heat flux of 10 to $40\;kW/m^2$. The test results showed the evaporation heat transfer of $CO_2$ has greatly effect on more nucleate boiling than convective boiling. The evaporation heat transfer coefficients of $CO_2$ are highly dependent on the vapor quality. heat flux and saturation temperature. The evaporation heat transfer coefficient of $CO_2$ is very larger than that of R-22 and R-134a. In making a comparison between test results and existing correlations. the present experimental data are the best fit for the correlation of Jung et al. But it was failed to predict the evaporation heat transfer coefficient of $CO_2$ using by the existing correlation. Therefore. it is necessary to develop reliable and accurate predictions determining the evaporation heat transfer coefficient of $CO_2$ in a horizontal tube.

A Method for Critical Heat Flux Prediction in Vertical Round Tubes with Axially Non-uniform Heat Flux Profile

  • Shim, Jae-Woo
    • Journal of Ocean Engineering and Technology
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    • v.22 no.1
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    • pp.13-21
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    • 2008
  • In this study a method to predict CHF(Critical heat flux) in vertical round tubes with axially non-uniform cosine heat flux distribution for water was examined. For this purpose a local condition hypothesis based CHF prediction correlation for uniform heat flux in vertical round tubes for water was developed from 9,366 CHF data points. The local correlation consisted of 4 local condition variables: the system pressure(P), tube diameter(D), mass flux of water(G), and 'true mass quality' of vapor($X_t$). The CHF data points used were collected from 13 different published sources having the following operation ranges: 1.01 ${\leq}$ P (pressure) ${\leq}$ 206.79 bar, 9.92${\leq}$ G (mass flux) ${\leq}$ 18,619.39 $kg/m^2s$, 0.00102 ${\leq}$ D(diameter) ${\leq}$ 0.04468 m, 0.0254${\leq}$ L (length) ${\leq}$ 4.966 m, 0.11 ${\leq}$ qc (CHF) ${\leq}$ 21.41 $MVW/m^2$, and -0.87 ${\leq}X_c$ (exit qualities) ${\leq}$ 1.58. The result of this work showed that a uniform CHF correlation can be easily extended to predict CHF in axially non-uniform heat flux heater. In addition, the location of the CHF in axially non-uniform tube can also be determined. The local uniform correlation predicted CHF in tubes with axially cosine heat flux profile within the root mean square error of 12.42% and average error of 1.06% for 297 CHF data points collected from 5 different published sources.

Fabrication of the catalyst free GaN nanorods on Si grown by MOCVD

  • Ko, Suk-Min;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.232-232
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    • 2010
  • Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

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Effect of Residual Droplet on the Solution-Grown SiC Single Crystals (상부종자 용액 성장에 있어 성장결정상 잔류액적의 영향)

  • Ha, Minh-Tan;Shin, Yun-Ji;Bae, Si-Young;Yoo, Yong-Jae;Jeong, Seong-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.6
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    • pp.516-521
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    • 2019
  • The top seeded solution growth (TSSG) method is an alternative technique to grow high-quality SiC crystals that has been actively studied for the last two decades. However, the TSSG method has different issues that need to be resolved when compared to the commercial SiC crystal growing method, i.e., physical vapor transport (PVT). A particular issue of the TSSG method of results from the presence of liquid droplets on the grown crystal that can remain even after crystal growth; this induces residual stress on the crystal surface. Hence, the residual droplet causes several unwanted effects on the crystal such as the initiation of micro-cracks, micro-pipes, and polytype inclusions. Therefore, this study investigated the formation of the residual droplet through multiphysics simulations and lead to the development of a liquid droplet removal method. As a result, we found that although residual liquid droplets significantly apply residual stress on the grown crystal, these could be vaporized by adopting thermal annealing processes after the relevant crystal growing steps.

Evaporation Heat Transfer Characteristics of $CO_2$ in a Horizontal Tube

  • Son Chang-Hyo;Kim Dae-Hui;Choi Sun-Muk;Kim Young-Ryul;Oh Hoo-Kyu
    • International Journal of Air-Conditioning and Refrigeration
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    • v.13 no.4
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    • pp.167-174
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    • 2005
  • The evaporation heat transfer coefficient of $CO_2$ (R-744) in a horizontal tube was investigated experimentally. The experiments were conducted without oil in a closed refrigerant loop which was driven by a magnetic gear pump. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and evaporator (test section). The test section consists of a smooth horizontal stainless steel tube of 7.75 mm inner diameter. The experiments were conducted at mass flux of 200 to $500kg/m^2s$, saturation temperature of $-5^{\circ}C\;to\;5^{\circ}C$, and heat flux of 10 to $40kW/m^2$. The test results showed the evaporation heat transfer of $CO_2$ has greater effect on nucleate boiling than convective boiling. The evaporation heat transfer coefficient of $CO_2$ is highly dependent on the vapor quality, heat flux and saturation temperature. The evaporation heat transfer coefficient of $CO_2$ is very larger than that of R-22 and R-134a. In comparison with test results and existing correlations, the best fit of the present experimental data is obtained with the correlation of Jung et al. But the existing correlations failed to predict the evaporation heat transfer coefficient of $CO_2$. Therefore, it is necessary to develop reliable and accurate predictions determining the evaporation heat transfer coefficient of $CO_2$ in a horizontal tube.

DEVELOPMENT OF A WALL-TO-FLUID HEAT TRANSFER PACKAGE FOR THE SPACE CODE

  • Choi, Ki-Yong;Yun, Byong-Jo;Park, Hyun-Sik;Kim, Hee-Dong;Kim, Yeon-Sik;Lee, Kwon-Yeong;Kim, Kyung-Doo
    • Nuclear Engineering and Technology
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    • v.41 no.9
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    • pp.1143-1156
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    • 2009
  • The SPACE code that is based on a multi-dimensional two-fluid, three-field model is under development for licensing purposes of pressurized water reactors in Korea. Among the participating research and industrial organizations, KAERI is in charge of developing the physical models and correlation packages for the constitutive equations. This paper introduces a developed wall-to-fluid heat transfer package for the SPACE code. The wall-to-fluid heat transfer package consists of twelve heat transfer subregions. For each sub-region, the models in the existing safety analysis codes and the leading models in literature have been peer reviewed in order to determine the best models which can easily be applicable to the SPACE code. Hence a wall-to-fluid heat transfer region selection map has been developed according to the non-condensable gas quality, void fraction, degree of subcooling, and wall temperature. Furthermore, a partitioning methodology which can take into account the split heat flux to the continuous liquid, entrained droplet, and vapor fields is proposed to comply fully with the three-field formulation of the SPACE code. The developed wall-to-fluid heat transfer package has been pre-tested by varying the independent parameters within the application range of the selected correlations. The smoothness between two adjacent heat transfer regimes has also been investigated. More detailed verification work on the developed wall-to-fluid heat transfer package will be carried out when the coupling of a hydraulic solver with the constitutive equations is brought to completion.

Terahertz Time-Domain Spectroscopy and Imaging using Compact Fiber-coupled Terahertz Modules (초소형의 광섬유 결합형 테라헤르츠 모듈을 이용한 시간영역에서의 분광 및 이미징)

  • Yoon, Young-Jong;Kim, Namje;Ryu, Han-Cheol;Moon, Kiwon;Shin, Jun-Hwan;Han, Sang-Pil;Park, Kyung Hyun
    • Korean Journal of Optics and Photonics
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    • v.25 no.2
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    • pp.72-77
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    • 2014
  • We have demonstrated a terahertz (THz) time-domain spectroscopy and imaging system using compact fiber-coupled THz modules. Using this THz spectroscopy system we have measured the absorption spectrum of water vapor in free space over 3 THz, as well as the refractive indices of various substrates such as Si, $Al_2O_3$, and GaAs using the transfer-function method. Through the THz imaging system we have observed a high-quality THz image of a medical knife and metal clip sample, with a resolution of $192{\times}89$ pixels using a step size of 250 ${\mu}m$.