• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.114-119
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• 1996

The use of holographic interference lithography and removal techniques to corrugate GaAs substrate have been studied. The periodic photoresist structure, which serves as a protective mask during etching, is holographically prepared. Subsequently periodic V-grooved pattern is formed on the GaAs substrate by conventional a H$_{2}$SO$_{4}$-H$_{2}$O$_{2}$-H$_{2}$O wet etching. The linewidth of a GaAs pattern is about 0.4$\mu$m and the depth is 0.5$\mu$m A quantum wires(QWRs) array is well formed on the V-grooved substrate by MOCVD (metalorganic chemical vapor deposition) growth of GaAs/Al$_{0.5}$Ga$_{0.5}$As (50$\AA$/300$\AA$) quantum wells. The formation of QWR array is confirmed by the temperature dependent photoluminescence (PL) measurement. The intensive PL peak with a FWHM of 6meV at 21K shows the high quality of the QWR array.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.7
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• pp.696-701
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• 2015

Two-phase flow boiling experiments were conducted in 15 micro-channels with a depth of 0.2 mm, width of 0.45 mm, and length of 60 mm. FC-72 was used as the working fluid, and the mass fluxes ranged from 200 to $400kg/m^2s$. Tests were performed over a heat flux range of $5-40kW/m^2$ and vapor quality range of 0.1-0.9. The heat transfer coefficient sharply decreased at a lower heat flux and then was kept approximately constant as the heat flux is increased. Based on the measured heat transfer data, the flow pattern was simply classified into bubbly, slug, churn, and wavy/annular flows using the existing method. In addition, these classified results were compared to the transition criterion to wavy/annular regime. However, it was found that the existing transition criterion did not satisfactorily predict the transition criterion to annular regime for the present data.

• Atmosphere
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• v.19 no.2
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• pp.213-226
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• 2009

In order to investigate the characteristics of Changma over the Korean peninsula, KEOP-2007 IOP (Intensive Observing Period) was conducted from 15 June 2007 to 15 July 2007. KEOP-2007 IOP is high spatial and temporal radiosonde observations (RAOB) which consisted of three special stations (Munsan, Haenam, and Ieodo) from National Institute of Meteorological Research, five operational stations (Sokcho, Baengnyeongdo, Pohang, Heuksando, and Gosan) from Korea Meteorological Administration (KMA), and two operational stations (Osan and Gwangju) from Korean Air Force (KAF) using four different types of radiosonde sensors. The error statistics of the sensor of radiosonde were investigated using quality control check. The minimum and maximum error frequency appears at the sensor of RS92-SGP and RS1524L respectively. The error frequency of DFM-06 tends to increase below 200 hPa but RS80-15L and RS1524L show vice versa. Especially, the error frequency of RS1524L tends to increase rapidly over 200 hPa. Systematic biases of radiosonde show warm biases in case of temperature and dry biases in case of relative humidity compared with ECMWF (European Center for Medium-Range Weather Forecast) analysis data and precipitable water vapor from GPS. The maximum and minimum values of systematic bias appear at the sensor of DFM-06 and RS92-SGP in case of temperature and RS80-15L and DFM-06 in case of relative humidity. The systematic warm and dry biases at all sensors tend to increase during daytime than nighttime because air temperature around sensor increases from the solar heating during daytime. Systematic biases of radiosonde are affected by the sensor type and the height of the sun but random errors are more correlated with the moisture conditions at each observation station.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.12
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• pp.1535-1548
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• 2004

Condensation heat transfer experiments were conducted with the oblong shell and plate heat exchanger without oil in a refrigerant loop using R-l34a, R-407C and R-410A. An experimental refrigerant loop has been developed to measure the condensation heat transfer coefficient h$_{r}$ and frictional pressure drop $\Delta$p$_{f}$ of the various refrigerants in a vertical oblong shell and plate heat exchanger. The effects of the refrigerant mass flux(40∼80kg/$m^2$s), average heat flux(4∼8kW/$m^2$), refrigerant saturation temperature(30∼4$0^{\circ}C$) and vapor quality of refrigerants on the measured data were explored in detail. Similar to the case of a plate heat exchanger, even at a very low Reynolds number, the flow in the oblong shell and plate heat exchanger remains turbulent. A comparison of the performance of the various refrigerants revealed that R-410A had the highest heat transfer performance followed by R-l34a, and R-407C had the lowest performance of the refrigerants tested. The pressure drops were also reported in this paper. The pressure drops for R-410A were approximately 45% lower than those of R-l34a. R-407C had 30% lower pressure drops than R-l34a. Experimental results were compared with several correlations which predicted condensation heat transfer coefficients and frictional pressure drops. Comparison with the experimental data showed that the previously proposed correlations gave unsatisfactory results. Based on the present data, empirical correlations of the condensation heat transfer coefficient and the friction factor were proposed.tor were proposed.sed.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.189-194
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• 2005

The evaporation heat transfer and pressure drop of $CO_2$ in a small diameter tube was investigated experimentally. The experiments were conducted without oil in a closed refrigerant loop which was driven by a magnetic gear pump. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and evaporator(test section). The test section was made of a horizontal stainless steel tube with the inner diameter of 4.57 mm, and length of 4 m. The experiments were conducted at mass flux of 200 to 700 $kg/m^2s$, saturation temperature of $0^{\circ}C$ to $20^{\circ}C$, and heat flux of 10 to 20 $kW/m^2$ . The test results showed the evaporation heat transfer of $CO_2$ has great effect on more nucleate boiling than convective boiling. The evaporation heat transfer coefficients of $CO_2$ are highly dependent on the vapor quality, heat flux and saturation temperature. The evaporation pressure drop of C02 are highly dependent on the mass flux. In comparison with test results and existing correlations, correlations failed to predict the evaporation heat transfer coefficient and pressure drop of $CO_2$, therefore, it is necessary to develop reliable and accurate predictions determining the evaporation heat transfer coefficient and friction pressure drop of $CO_2$ in a horizontal tube.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.165-165
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• 2014

In this study, we demonstrated that the soft lithographic patterning processing of chemical vapor deposition (CVD) graphene and rGO sheets as large scale, low cost, high quality and simplicity for future industrial applications. Recently, a previous study has reported that single layer graphene grown via CVD was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp [1]. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide (DMSO) molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface [2]. Further, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or simple and efficient chemical sensor consisting of reduced graphene oxide (rGO) and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.