• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.37-39
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• 1996

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350${\mu}{\textrm}{m}$ thick GaN was 576 arcsecond. The photo- luminescence spectrum measured (at room temperature) show the narrow bound exciton(I$_2$) line and weak donor-acceptor pair recombination peak, however, there was not observed deep donor-acceptor pare recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality.

• International Journal of Fluid Machinery and Systems
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• v.8 no.4
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• pp.240-253
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• 2015

The objective of this paper is to evaluate the applicability of mass transfer cavitation models and determine appropriate numerical parameters for cavitating flow simulations. CFD simulations were performed for a NACA66 hydrofoil at cavitation numbers of 1.49 and 1.00, corresponding to steady sheet and unsteady sheet/cloud cavitating regimes using the Kubota and Merkle cavitation models. The Merkle model was implemented into CFX by User Fortran code. The Merkle cavitation model is found to give some improvements for cavitating flow simulation results for these cases. Turbulence modeling is also found to have an important contribution to the prediction quality of the simulations. The relationship between the turbulence viscosity modification, in order to take into account the local compressibility at the vapor/liquid interfaces, and the predicted numerical results is clarified. The limitations of current cavitating flow simulation techniques are discussed throughout the paper.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.191-194
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• 2011

Low-grade waste heat has generally been discarded in industry due to lack of efficient recovery methods. In recent years, organic Rankine cycle(ORC) has become a field of intense research and appears as a promising technology for conversion of heat into useful work of electricity. In this work thermodynamic performance of ORC with superheating of vapor is comparatively assessed for various working fluids. Special attention is paid to the effects of system parameters such as the evaporating temperature on the characteristics of the system such as maximum possible work extraction from the given source, volumetric flow rate per 1 kW of net work and quality of the working fluid at turbine exit as well as thermal efficiency.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.239-245
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• 2004

Resistance spot weldability of coated steels for automobile applications was investigated. Test samples were prepared from commercial products of 0.8 mm in thickness. Based on the tensile-shear test, surface quality examination and cracking behavior, it was clear that aluminized steels showed good weldability. Microstructural inspection revealed that the coated materials was piled up at the split zone in the welding of aluminized steels. It was also demonstrated that no weld crack was found in the aluminized steel weld metal even the welding was carried out with higher current. However, through thickness cracks were detected at the weld metal of zinc coated steel. Small particles were found on the crack surface of zinc coated steel weld metal. It was thought that zinc vapor played key role to form the weld crack.

• Proceedings of the Korea Technology Innovation Society Conference
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• 2001.05a
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• pp.285-302
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• 2001

At the present time the desalination technology of sea water for portable water in islands employs the RO method. The technology which needs complicated pretreatment processes with various chemicals can generate secondary water pollution and the high maintenance costs such as replacements of filters and membranes make islanders nearly impossible to operate. The MVRS technology for desalination of sea water however has several advantages such as constant production of quality portable water and capability of managing broad operating load. The variable-speed turbo-type vapor compressors employed in the system can utilize wind energy which is abundant in most Korean islands. Salt as a by-product can be produced by applying solar energy to the salt-concentrated waste water from the system. This paper discusses the relating topics such as technical and economical viabilities of the new MVRS desalination system for the production of portable water and salt as a by-product using new & renewable sources of energy.

• Journal of Advanced Marine Engineering and Technology
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• v.20 no.4
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• pp.70-80
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• 1996

Experimental results for forced convection condensation of R-22 and R-407C inside 7.5mm ID and 4000mm length of horizontal tubes are presented. The experimental data covered total flow rate from 114.3 to 267.1kg/($m^2$.s) and quality from 0 to 1. The vapor temperature and pressure drop along the tube were measured. The pressure drop for R-407C increased with flow rate similar to that of R-22. The experimental data compared with the available perdictions for pressure drop. Based on the data a prediction method was presented for the calculation of pressure drop of R-22 alternative refrigerants.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• Journal of Mechanical Science and Technology
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• v.20 no.8
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• pp.1275-1283
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• 2006

Condensation heat transfer coefficients in a 7.92 mm inside diameter copper smooth tube were obtained experimentally for R22, R134a, and R410A. Working conditions were in the range of $30-40^{\circ}C$ condensation temperature, $95-410 kg/m^2s$ mass flux, and 0.15-0.85 vapor quality. The experimental data were compared with the eight existing correlations for an annular flow regime. Based on the heat-momentum analogy, a condensation heat transfer coefficients correlation for the annular flow regime was developed. The Breber et al. flow regime map was used to discern flow pattern and the Muller-Steinhagen & Heck pressure drop correlation was used for the term of the proposed correlation. The proposed correlation provided the best predicted performance compared to the eight existing correlations and its root mean square deviation was less than 8.7%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.34-38
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• 1992

Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO$_2$films formed by Plasma-enhanced chemical vapor deposition (PECVD) have been studied. PECVD SiO$_2$films were formed with substrate temperature, and annealing time and temperature of RTP changed, and its'characteristics were obsreved by C-V measurement. We found that the quality of SiO$_2$films formed by PECVD depended on annealing time rather than substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.194-197
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• 1997

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the thick-fi lm GaN on AIN/Si substrates. We obtained substrate-free GaN. The foul t-width at half maximum of double crystal X-ray rocking curve from 350 ${\mu}{\textrm}{m}$ thick substrate-free GaN was ~1000 arcsec. The photoluminescence spectrum (at 20 K) shows the narrow bound exiton (I$_2$) line and wealth donor-acceptor pair recombination however. there was not observed deep donor-accepter pair recombination indicate the substrate-free GaN crystal prepared in this study are of high purity and high crystalline quality.