• Title/Summary/Keyword: Vapor phase reaction

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Selective Oxidation of Hydrogen Sulfide Containing Ammonia and Water Using Fe2O3/SiO2 Catalyst (Fe2O3/SiO2 촉매 상에서 물과 암모니아가 함께 존재하는 황화수소의 선택적 산화 반응)

  • Kim, Moon-Il;Lee, Gu-Hwa;Chun, Sung-Woo;Park, Dae-Won
    • Korean Chemical Engineering Research
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    • v.50 no.3
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    • pp.398-402
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    • 2012
  • The catalytic performance of some metal oxides in the vapor phase selective oxidation of $H_2S$ in the stream containing ammonia and water was investigated. Among the catalysts tested $Fe_2O_3/SiO_2$ was the most promising catalyst for practical application. It showed higher than 90% $H_2S$ conversion and very small amount of $SO_2$ emission over a temperature range of $240{\sim}280^{\circ}C$. The effects of reaction temperature, $O_2/H_2S$ ratio, amount of ammonia and water vapor on the catalytic activity of $Fe_2O_3/SiO_2$ were discussed to better understand the reaction mechanism. The $H_2S$ conversion showed a maximum at $260^{\circ}C$ and it decreased with increasing temperature over $280^{\circ}C$. With an increase of $O_2/H_2S$ ratio from 0.5 to 4, the conversion was slightly increased, but the selectivity to elemental sulfur was remarkably decreased. The increase of ammonia amount favored the conversion and the selectivity to elemental sulfur with a decrease in $SO_2$ production. The presence of water vapor decreased both the activity and the selectivity to sulfur, but increased the ATS selectivity.

The Scavenger Effects of Various Antioxidants in Cigarette Filters on the Free Radicals in Mainstream Smoke

  • Park, Jin-Won;Kim, Soo-Ho;Kim, Jong-Yeol;Kim, Chung-Ryul;Rhee, Moon-Soo
    • Journal of the Korean Society of Tobacco Science
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    • v.29 no.2
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    • pp.90-97
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    • 2007
  • This study was conducted to evaluate the effect of additives (antioxidants for free radicals reduction) in cigarette filter treated with various antioxidants (three types of proanthocyanidins and ascorbic acid) and various concentrations of ascorbic acid and loaded with activated carbon on the delivery of free radicals of mainstream smoke (MS) by ESR. Also, we analyzed Hoffmann's analytes andscavenger activity according to the storage time and in vitro cytotoxicity. The analysis of spin number of vapor and particulate phase free radicals in MS are decreased to $14{\sim}24\;%$ and $16{\sim}40\;%$, respectively. As aresult of antioxidant potential for inactivity of vapor and particulate phase free radicals, natural antioxidants were more effective than ascorbic acid. Based on the result of the analysis of Hoffmann's analytes for various antioxidantstreated cigarette filters during the smoking, cigarette filter treated with ascorbic acid showed the lower amount of the deliveries of hydroquinone, isoprene and quinoline in MS than those treated with the other antioxidants. In the significant t-test on the difference of the cytotoxicity among the various antioxidants treated-cigarette filters, there are no significant differences at the 95 % confidence level. Those results indicated that the antioxidants were useful for reducing free radicals in MS because of the fast reaction between antioxidant and free radicals.

Design and Optimization of Pilot-Scale Bunsen Process in Sulfur-Iodine (SI) Cycle for Hydrogen Production (수소 생산을 위한 Sulfur-Iodine Cycle 분젠반응의 Pilot-Scale 공정 모델 개발 및 공정 최적화)

  • Park, Junkyu;Nam, KiJeon;Heo, SungKu;Lee, Jonggyu;Lee, In-Beum;Yoo, ChangKyoo
    • Korean Chemical Engineering Research
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    • v.58 no.2
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    • pp.235-247
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    • 2020
  • Simulation study and validation on 50 L/hr pilot-scale Bunsen process was carried out in order to investigate thermodynamics parameters, suitable reactor type, separator configuration, and the optimal conditions of reactors and separation. Sulfur-Iodine is thermochemical process using iodine and sulfur compounds for producing hydrogen from decomposition of water as net reaction. Understanding in phase separation and reaction of Bunsen Process is crucial since Bunsen Process acts as an intermediate process among three reactions. Electrolyte Non-Random Two-Liquid model is implemented in simulation as thermodynamic model. The simulation results are validated with the thermodynamic parameters and the 50 L/hr pilot-scale experimental data. The SO2 conversions of PFR and CSTR were compared as varying the temperature and reactor volume in order to investigate suitable type of reactor. Impurities in H2SO4 phase and HIX phase were investigated for 3-phase separator (vapor-liquid-liquid) and two 2-phase separators (vapor-liquid & liquid-liquid) in order to select separation configuration with better performance. The process optimization on reactor and phase separator is carried out to find the operating conditions and feed conditions that can reach the maximum SO2 conversion and the minimum H2SO4 impurities in HIX phase. For reactor optimization, the maximum 98% SO2 conversion was obtained with fixed iodine and water inlet flow rate when the diameter and length of PFR reactor are 0.20 m and 7.6m. Inlet water and iodine flow rate is reduced by 17% and 22% to reach the maximum 10% SO2 conversion with fixed temperature and PFR size (diameter: 3/8", length:3 m). When temperature (121℃) and PFR size (diameter: 0.2, length:7.6 m) are applied to the feed composition optimization, inlet water and iodine flow rate is reduced by 17% and 22% to reach the maximum 10% SO2 conversion.

Chemical vapor deposition of $TaC_xN_y$ films using tert-butylimido tris-diethylamido tantalum(TBTDET) : Reaction mechanism and film characteristics

  • Kim, Suk-Hoon;Rhee, Shi-Woo
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.24.1-24.1
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    • 2009
  • Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

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Characterization of In(Al)GaN layer grown by mixed-source hydride vapor phase epitaxy (혼합소스 HVPE에 의해 성장된 In(Al)GaN 층의 특성)

  • Hwang, S.L.;Kim, K.H.;Jang, K.S.;Jeon, H.S.;Choi, W.J.;Chang, J.H.;Kim, H.S.;Yang, M.;Ahn, H.S.;Bae, J.S.;Kim, S.W.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.4
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    • pp.157-161
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    • 2006
  • InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.

Assessment of the Nitrate Radical Chemistry and Chemical Composition on Jeju Island during the Asian Pollution Period in the Spring of 2001

  • Shon, Zang-Ho;Kim, Ki-Hyun;Keith N. Bower;Lee, Gangwoong;Kim, Jiyoung
    • Journal of Korean Society for Atmospheric Environment
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    • v.19 no.E3
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    • pp.137-148
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    • 2003
  • In this study, we examined the influence of long-range transport of dust particles and air pollutants on the photochemistry of NO$_3$on Jeju Island, Korea (33.17 N, 126.10$^{\circ}$E) during the Asian Dust-Storm (ADS) period of April 2001. Three ADS events were observed during the periods of 10∼12, 13∼14, and 25∼26 April. Average concentration level of nighttime NO$_3$on Jeju Island during the ADS period was estimated to be about 2 x 10$^{8}$ molecules cm$^{-3}$ ( - 9 pptv). Decreases in NO$_3$levels during the ADS period was likely to be determined mainly by the enhancement of the $N_2$O$_{5}$ heterogeneous reaction on dust aerosol surfaces. The reaction of N20s on aerosol surfaces was a more important sink for nighttime N03 during the ADS due to the significant loading of dust particles. The reaction of $N_2$O$_{5}$ with NMHCs and the gas-phase reaction of N20s with water vapor were both significant loss mechanisms during the study period, especially during the NADS. However, dry deposition of these oxidized nitrogen species and a heterogeneous reaction of NO$_3$were of no importance. Short-term observations of $O_3$, NO$_2$, DMS, and SO$_2$in the MBL indicated that concentrations of most of these chemical species were different between the ADS and non - Asian - Dust-Storm (NADS) periods, implying that their levels were affected sensitively by the differences in air mass trajectories.

Depletion Kinetics of the Ground State CrO Generated from the Reaction of Unsaturated Cr(CO)x with O2 and N2O

  • Son, H.S.;Ku, J.K.
    • Bulletin of the Korean Chemical Society
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    • v.23 no.2
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    • pp.184-188
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    • 2002
  • Unsaturated $Cr(CO)_x(1{\leq}x{\leq}5)$molecules were generated in the gas phase from photolysis of $Cr(CO)_6$vapor in He using an unfocussed weak UV laser pulse and their reactions with $O_2$ and $N_2O$ have been studied. The formation and disappearance of the ground state CrO molecules were identified by monitoring laser-induced fluorescence(LIF) intensities vs delay time between the photolysis and probe pulses. The photolysis laser power dependence as well as the delay time dependence of LIF intensities from the CrO orange system showed different behavior as those from ground state Cr atoms, suggesting that the ground state CrO molecules were generated from the reaction between $O_2/N_2O$ and photo-fragments of $Cr(CO)_6$ by one photon absorption. The depletion rate constants for the ground state CrO by $O_2$ and $N_2O$ are $5.4{\pm}0.2{\times}10^{-11}$ and $6.5{\pm}0.4{\times}10^{-12}cm^3molecule^{-1}s^{-1}$, respectively.

A study on the SiC selective deposition (SiC의 선택적 증착에 관한 연구)

  • 양원재;김성진;정용선;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.233-239
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    • 1998
  • SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

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Synthesis and Characteristics of W-l5wt%Cu Nanocomposite Powder by Oxide Reduction (산화물환원에 의한 W-15wt%Cu 나노복합분말의 합성과 특성)

  • 윤의식
    • Journal of Powder Materials
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    • v.4 no.4
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    • pp.304-309
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    • 1997
  • The synthesis of W-l5wt%Cu nanocomposite powder by hydrogen reduction of ball milled W-Cu oxide mixture was investigated in terms of powder characteristics such as particle size, mixing homogeneity and micropore structure. It is found that the micropores in the ball milled oxide (2-50 nm in size) act as an effective removal path of water vapor, followed by the formation of dry atmosphere at reaction zone. Such thermodynamic condition enhances the nucleation of W phase but suppresses the growth process, being in favor of the formation of W nanoparticles (about 21 nm in size). In addition, the superior mixing homogeneity of starting oxide mixture turned out to Play a significant role for forming extraordinary chemical homogeneity of W-l5wt%Cu nanocomposite powder.

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Effects of Thermal Annealing on the Properties of Amorphous Carbon Nitride Films Deposited by PECVD (PECVD로 제조된 비정질 질화탄소 박막의 물성에 미치는 열처리 효과)

  • Moon, Hyung-Mo;Kim, Sang-Sub
    • Korean Journal of Materials Research
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    • v.13 no.5
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    • pp.303-308
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    • 2003
  • Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.