• 제목/요약/키워드: Vapor phase growth

검색결과 270건 처리시간 0.026초

미립액상 분말에 의한 $YBa_{2}Cu_{3}O_{x}$ 초전도체의 PECVD 증착법 (A study on the $YBa_{2}Cu_{3}O_{x}$ phase deposition by liquid aerosol PECVD)

  • 정용선;오근호
    • 한국결정성장학회지
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    • 제6권2호
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    • pp.229-237
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    • 1996
  • 액상의 미립자를 이용하여 저온 플라즈마 반응로 안에서 $YBa_{2}Cu_{3}O_{x}$ 초전도체상을 MgO 단결정 위에 in-situ 증착하였다. 금속화합물의 용해도, 분해온도와 용매의 증기압이 이공정 방법에서 중용한 인자로 나타났으며, 초전도체상의 증착실험 조건은 산소분압이 0.3에서 2.7 kPa, 증착온도가 $800^{\circ}C$에서 $940^{\circ}C$까지이었다. 초전도체상을 위한 최적의 증착조건은 CuO 상전이선에 근접하게 나타났다.

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MOVPE 단결정층 성장법 III. 원자층 성장법 (Metal-Organic Vapor Phase Epitaxy III. Atomic Layer Epitaxy)

  • 정원국
    • 한국표면공학회지
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    • 제23권4호
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    • pp.197-207
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    • 1990
  • Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

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Vapor-quasiliquid-solid (VQS) mechanismof one-dimensional nanostructure growth based Cu catalyst

  • Hien, Vu Xuan;You, Jae-Lok;Jo, Kwang-Min;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2014년도 추계학술대회 논문집
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    • pp.112-113
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    • 2014
  • The submicron-rods of $Cu_2O$ with diameters of 100-700 nm and lengths of $2-8{\mu}m$ were synthesized by radio frequency magnetron sputtering. The abundance of Cu species, which is modulated by the $Ar/O_2$ ratio during the sputtering process affect directly to the growths of the $Cu_2O$ branches on the bodies of the submicron-rods. Transmission electron microscopy and elemental mapping reveal that metallic Cu are existed on the heads of the $Cu_2O$ rods. The growth rate, catalyst phase and shape reveal that vapor-quasiliquid-solid was the growth mechanism of the formations of those structures.

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고체의 전도를 포함한 기포성장의 복합적 해석 (Conjugate Analysis of Bubble Growth Involving Conduction in Solid)

  • 손기헌
    • 대한기계학회논문집B
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    • 제27권2호
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    • pp.265-273
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    • 2003
  • Numerical analysis of bubble motion during nucleate boiling is performed by imposing a constant heat flux condition at the base of a heater which occurs in most of boiling experiments. The temporal and spatial variation of a solid surface temperature associated with the bubble growth and departure is investigated by solving a conjugate problem involving conduction in the solid. The vapor-liquid interface is tracked by a level set method which is modified to include the effects of phase change at the interface, contact angle at the wall and evaporative heat flux in a thin liquid micro-layer. Based on the numerical results, the bubble growth pattern and its interaction with the heating solid are discussed. Also, the effect of heating condition on the bubble growth under a micro-gravity condition is investigated.

SALS를 이용한 고분자용액의 상전환 기구에 관한 연구 : C1-C4 알콜의 첨가에 따른 상분리 거동에 미치는 효과와 투과 특성 (The study of phase inversion of polymer solutions using small angle light scattering (SALS): The effect of addition of alcohol (C1-C4) on phase separation behavior and hydraulic permeation)

  • Kang, Jong-Seok;Lee, Young-Moo
    • 한국막학회:학술대회논문집
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    • 한국막학회 2002년도 춘계 총회 및 학술발표회
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    • pp.81-85
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    • 2002
  • Small angle light scattering and field emission scanning electron microscope have been used to quantify the kinetics of liquid-liquid separation behavior during water vapor(RH52%[$\pm$3%] at 27$^{\circ}C$) quenching (non-solvent induced phase separation, NIPS) of polysulfone/NMP/Alcohol and CPVC/THF/Alcohol, respectively. Time dependence of the position of the light scattering maximum was observed at polysufone dope solutions, confirming spinodal secomposition (SD). while CPVC dope solutions showed a decreased scattered light intensity with a increased q-valuel, indicating nucleation & growth (NG). For the each system, domain growth rate in the intermediate and late stage of phase separation decreased with increasing the number of carbon of alcohol used as additive (non-solvent). Also, in the early stage for SD, the scattering intensity with time was in accordance with Cahns linear theory of spinodal decomposition,[1-3] regardless of types of non-solvent additive.

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HVPE 방법으로 성장한 Alpha-Ga2O3의 특성 분석 (Characterization of Alpha-Ga2O3 Template Grown by Halide Vapor Phase Epitaxy)

  • 손호기;라용호;이영진;이미재;김진호;황종희;김선욱;임태영;전대우
    • 한국전기전자재료학회논문지
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    • 제31권6호
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    • pp.357-361
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    • 2018
  • We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

Phenol을 분해하는 Acinetobacter sp. GEM2의 분리 및 특성 (Isolation and Characterization of a Phenol-Degrading Strain Acinetobacter sp.GEM2)

  • 이창호;오희목;권태종;권기석;이성기;서현효;윤병대
    • 한국미생물·생명공학회지
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    • 제22권6호
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    • pp.692-699
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    • 1994
  • A bacterial strain which formed a distinct colony on agar plate containing phenol as a vapor phase and grew well in a liquid minimal medium was isolated and identified as Acinetobac- ter sp. GEM2. The optimal temperature and initial pH for the growth of Acinetobacter sp. GEM2 were 30$\circ$C and 7.0, respectively. Cell growth was inhibited by phenol at the concentration over 1500 ppm. Cell growth dramatically increased from 10 hours after cultivation and almost showed a stationary phase within 24 hours at which 95% of phenol was concomitantly degraded. Acinetobac- ter sp. GEM2 was capable of growing on aromatic compounds, such as benzoic acid, phenol, m- cresol, o-cresol, P-cresol, catechol, gentisic acid, and toluene, but did not grow on benzene, salicylic acid, p-toluic acid, and p-xylene. By the analysis of catechol dioxygenase, it seemed that catechol was degraded through both meta- and ortho-cleavage pathway. The growth-limiting log P value of Acinetobacter sp. GEM2 on organic solvents was 2.0.

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Growth of Hexagonal Boron Nitride Thin Films on Silicon Using a Single Source Precursors

  • Boo, Jin-Hyo;Lee, Soon-Bo;Casten Rohr;Wilson Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.120-120
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    • 1998
  • Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

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MOCVD에 의한 InGaAs, InGaP 및 InGaAsP필름의 성장 및 조성변화에 대한 수치해석 연구 (A Numerical Study on the Growth and Composition of InGaAs, InGaP and InGaAsP Films Grown by MOCVD)

  • 임익태;김동석;김우승
    • 반도체디스플레이기술학회지
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    • 제4권1호
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    • pp.43-48
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    • 2005
  • Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

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OMVPE and Plasma-Assisted Doping of ZnSe with Dimethlzinc:triethylamine Adduct Source

  • 허증수;임정옥
    • 센서학회지
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    • 제5권2호
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    • pp.55-60
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    • 1996
  • The growth and microwave plasma assisted nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy(OMVPE) has been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements. Particular emphasis is placed on understanding growth characteristics of $H_{2}Se$ and the new adduct source dimethylzinc:triethyllamine($DMZn:NEt_{3}$) as compared with those obtained with $H_{2}Se$ and DMZn. At lower temperatures ($<300^{\circ}C$) and pressures(<30Torr), growth rates are higher with the adduct source and the surface morphology is improved relative to films synthesized with DMZn. Hall measurements and photoluminescence spectra of the grown films demonstrate that DMZn and $DMZn:NEt_{3}$ produce material with comparable electronic and optical properties. Microwave plasma decomposition of ammonia is investigated as a possible approach to increasing nitrogen incorporation in ZnSe and photoluminescence spectra are compared to those realized with conventional ammonia doping.

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