• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1633-1637
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• 2006

We demonstrate a selective vapor-phase deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT) thin films on patterned $FeCl_3$. The PEDOT thin films were grown on various substrates by using the vapor-phase polymerization of ethylenedioxythiophene (EDOT) with $FeCl_3$ catalytic layers at 325 K. The selective deposition of the PEDOT thin films using vapor-phase polymerization was accomplished with patterned $FeCl_3$ layers as templates. Microcontact printing was done to prepare patterned $FeCl_3$ on polyethyleneterephthalate (PET) substrates. The selective vapor-phase deposition is based on the fact that the PEDOT thin films are selectively deposited only on the regions exposing $FeCl_3$ of the PET substrates, because the EDOT monomer can be polymerized only in the presence of oxidants, such as $FeCl_3$, Fe($CIO_4$), and iron(II) salts of organic acids/inorganic acids containing organic radicals.

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.512-518
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• 2006

In this paper, we investigated the deposition of pentacene thin film on a large area substrate by Organic Vapor Phase Deposition(OVPD) and applied it to fabrication of Organic Thin Film Transistor(OTFT). We extracted the optimum deposition conditions such as evaporation temperature of $260^{\circ}C$, carrier gas flow rate of 10 sccm and chamber vacuum pressure of 0.1 torr. We fabricated 72 OTFTs on the 4 inch size Si Wafer, Which produced the average mobility of $0.1{\pm}0.021cm^2/V{\cdot}s$, average subthreshold slope of 1.04 dec/V, average threshold voltage of -6.55 V, and off-state current is $0.973pA/{\mu}m$. The overall performance of pentacene TFTs over 4 ' wafer exhibited the uniformity with the variation less than 20 %. This proves that OVPD is a suitable methode for the deposition of organic thin film over a large area substrate.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.158-160
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• 2004

BiSrCaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The superconductivity was achieved at 20 K with an onset temperature of around 90 K in the film prepared at 72$0^{\circ}C$. From X ray diffraction analysis, the main superconducting phase in the films was the low Tc phase at 700∼75$0^{\circ}C$ and the high Tc phase at 750 ∼ 80$0^{\circ}C$.

• 대한기계학회논문집B
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• 제21권3호
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• pp.371-379
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• 1997

A theoretical study for a forced uniform flow impinging on a rotating disk, typically involved in Chemical Vapor Deposition(CVD) and Vapor-phase Axial Deposition(VAD) processes, has been carried out. A set of exact solutions for flow and temperature fields are developed by employing a similarity variable obtained from force balance on a control volume near the disk. The solutions depend on the rotating speed of the disk, .omega., and the forced flow speed toward the disk, a. For constant forced flow speed, the overall boundary layer thickness decreases when the rotating speed increases. Approximately 5%, 15%, and 30% decreases of the thickness are obtained for .omega./a = 2, 5, and 10, respectively, compared to the case of .omega./a = 0 (axisymmetric stagnation point flow). For constant rotating disk speed the boundary layer thickness immediately decreases as the forced flow speed increases, compared to the case of .omega./a .rarw. .inf. (induced flow near a rotating disk). Effects of .omega. and a on heat transfer coefficient are studied and explained with the boundary layer characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.336-339
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• 2007

The enhanced control of OLED deposition processes by Organic Vapor Phase Deposition $(OVPD^{(R)})$ is discussed. $OVPD^{(R)}$ opens a wide space of process control parameters. It allows the accurate and individual control of deposition layer properties like morphology and precise mixing of multi component layers (co-deposition) in comparison to conventional deposition manufacturing processes like e. g. VTE (vacuum thermal evaporation).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1676-1681
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• 2006

We report on Organic Vapor Phase Deposition $(OVPD^{(R)})$ an innovative deposition technology for organic light emitting device (OLED) and organic semiconductor manufacturing. The combination of $OVPD^{(R)}$ with Close Coupled Showerhead (CCS) technology results in manufacturing equipment with vast potential for cost effective manufacturing of OLED displays commercially competitive to LCD. The actual $OVPD^{(R)}$ equipment concept and design is discussed: Computational Fluid Dynamic (CFD) modeling is compared with experimental results proving the excellent controllability of the deposition process. Further other production relevant deposition properties are being reviewed e.g. high deposition rates and high organic material utilization efficiency of the $OVPD^{(R)}$ - Technology. Data from devices made by $OVPD^{(R)}$ show comparable/ superior performance to those fabricated with conventional vacuum thermal evaporation (VTE) techniques. An outlook on further potentials of $OVPD^{(R)}$ with respect to enabling advanced organic device structures is given.

• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.49-54
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• 1998

The effect of deposition paratmeters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH4 gas with and without H2 dilution at the substrate temperatures between 12$^{\circ}C$ and 38$0^{\circ}C$. The R. F. powers and the deposition pressures were also varied. After crystallizing at $600^{\circ}C$ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder I amorphous silicon films enhances the grain size in the crystallized films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.150-153
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• 1996

Polyvinylidene fluoride(PVDF) thin films are fabricated by vapor deposition method and their dielectric characteristics are investigated. At electric field near 4MV/m, a phase transition occur with polar ${\alpha}$ . In accordance to increasing temperature, the dielectric relaxation of PVOF thin films show from 70Hz to 104Hz. This result correspond to Debye's theory[1]. Activation energy of PVDP thin film is 21Kca1/mo1.

• 한국세라믹학회지
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• 제33권3호
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• pp.355-361
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• 1996

Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates. Y2O3 mol% of thin film was linearly increased with yttrium mole fraction of vapor phase. As yttrium mole fraction(Zyc13=0.18) increased dense and faceted thin films were enhanced. However as the yttrium mole fraction (Zyc13=0.04) decreased porous thin films with monoclinnic phase prevailed. With increasing pressure difference of substrate sides penetration depth decreased porosity and amount of monoclinic phase in the films increased.

• 한국초전도ㆍ저온공학회논문지
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• 제13권4호
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• pp.5-9
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• 2011

We have fabricated the superconducting $MgB_2$/carbon fiber by physical vapor deposition method. Mg (Magnesium) and B (Boron) were simultaneously deposited on the carbon fiber using the RF-sputtering and thermal evaporation, respectively. To ensure the relatively high vapor pressure of Mg at the growth region and the subsequent phase stability of $MgB_2$ at the deposition temperature, inverted funnel-like guide made of Mg-foil was employed while one side of the guide were open for the sputtered B flux. Mg vapor pressure should be controlled precisely to secure the complete reaction. The $MgB_2$/carbon fiber showed a uniformly deposited thin layer with dense and well-formed grains. The $MgB_2$/carbon fibers in this study showed $T_c$~37.5K, $J_c$ ~ $2{\times}10^4\;A/cm^2$ in the 20K, 0T.