• KOREAN JOURNAL OF CROP SCIENCE
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• v.40 no.5
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• pp.556-561
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• 1995

Persisent circadian rhythms in carbon assimilation, stomatal conductance and soluble carbohydrate concentration were investigated during grain filling period in rice plant transferred from a natural photoperiod to constant conditions. A weak rhythm in photosynthesis, measured as carbon assimilation, and stomatal opening, as conductance to water vapor, with a period of approximately 24-hours, occurred under constant condition. Carbon assimilation and stomatal conductance reached maximum values near noon and minimum values near midnight during the early stage (until 72-hour) after transferring to constant condition, and then the amplitude and phase were changed slowly, the rhythms with little damping, reaching maximum values near midnight and minimum values near noon during 96~120-hours after transferring. However, photosynthesis in plants grown for 14days after anthesis under constant moderate light(day and night) did not oscillated in constant condition unlike plants grown under a cycle of light and darkness. These phenomenon was observed in soluble carbohydrate concentration in flag leaves as well. Evidences from several approaches indicate that endogenous rhythms of $CO_2$ assimilation, stomatal conductance and soluble carbohydrate concentration are closely couped with each other and particularly important to plants, which depend on the natural day-night cycle as a external signal.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.474-484
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• 2005

Biological treatment is a promising alternative to conventional air pollution control methods. Bioreactors for air pollution control have found most of their success in the treatment of dilute and high flow waste air streams containing volatile organic compounds and odor compounds. They offer several advantages over traditional technologies such as incineration or adsorption. These include lower treatment costs, absence of formation of secondary pollutants, no spent chemicals, low energy demand and low temperature treatment. The most widely used bioreactor for air pollution control is biofilter, but it has several limitations. In the past years major progress has been accomplished in the development of vapor phase bioreactor, in particular biotrickling filters. Biotrickling filters are more complex than biofilters, but are usually more effective, especially for the treatment of compounds which are difficult to degrade or compounds that generate acidic by-products. While the level of understanding of biotrickling filtration process for VOCs still remains limited, the evident success of biotreatment of VOC in air stimulated the pursue of acitve research. This paper presents fundamental and theoretical/practical aspect of air pollution control in biotrickling filter. Special emphasis is given to the operating parameters and the factors influencing performance for air pollution control in biotrickling filter.

• Clean Technology
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• v.13 no.1 s.36
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• pp.1-15
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• 2007

Biological treatment is a relatively recent air pollution control technology in which off-gases containing biodegradable odors and volatile organic compounds(VOCs) are vented through microbes. It is a promising alternative to conventional air pollution control methods. Bioreactors for air pollution control have found most of their success in the treatment of dilute and high flow waste air streams containing VOCs and odor compounds. They offer several advantages over traditional technologies such as incineration or adsorption. These include lower treatment costs, absence of formation of secondary pollutants, no spent chemicals, low energy demand and low temperature treatment. The three most widely used technologies are described, namely biofiltration, biotrickling filtration, bioscrubbing. The most widely used bioreactor for air pollution control is biofilter, but it has several limitations. In the past years major progress has been accomplished in the development of vapor phase bioreaction systems, for solving problems of biofilter. Biotrickling filters are more complex than biofilters, but are usually more effective, especially for the treatment of compounds which are difficult to degrade or compounds that generate acidic by-products. This, paper reviews fundamental and theoretical/practical aspect of air pollution control in biofilter, biotrickling filter and bioscrubber, focusing more extensively on biotrickling filtration. Special emphasis is given to the operating parameters and the factors influencing performance for air pollution control, and cost estimation in biotreatment technologies.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.377-382
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• 1998

Atomic layer deposition(ALD) of amorphous TiN films on $SiO_2$ between 17$0^{\circ}C$ and 21O$^{\circ}C$ has been investigated by alternate supply of reactant sources, Ti[N($C_2,H_5,CH_3)_2]_4$ [tetrakis(ethylmethylamminoltitanium: TEMAT] and $NH_3$. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, $NH_3$. gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 1.6 monolayer(MU per cycle with sufficient pulse times of reactant sources at 20$0^{\circ}C$. The results suggest that film thickness per cycle could be beyond 1 MLicycie in ALD, which were explained by rechemisorption mechanisms of reactant sources. The ideal linear relationship be¬tween number of cycles and film thickness is confirmed. As a results of surface limited reactions of ALD, step cover¬age was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was seperated from $NH_3$ by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4 at%.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.3
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• pp.249-256
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• 2006

Catalytic combustion of toluene was investigated on the Cu-Mn oxide catalysts prepared by the impregnation(Imp) and the deposition-precipitation(DP) methods. The mixing of copper and manganese has been found to enhance the activity of catalysts. It is then found that catalytic efficiency of the Cu-Mn oxide catalyst prepared by the DP method on combustion of toluene is much higher than that of the Cu-Mn oxide catalyst prepared by Imp method with the same chemical composition. The catalyst prepared by the deposition-precipitation method observed no change of toluene conversion at time on stream during 10 days and at the addition of water vapor. On the basis of catalyst characterization data, it has been suggested that the catalysts prepared by the DP method showed uniform distribution and smaller particle size on the surface of catalyst and then enhanced reduction capability of catalysts. Therefore, we think that the DP method leads on progressive capacity of catalyst and promotes stability of catalyst. It was also presumed that catalytic conversion of toluene on the Cu-Mn oxide catalyst depends on redox reaction and $Cu_{1.5}Mn_{1.5}O_4$ spinel phase acts as the major active sites of catalyst.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.49-56
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• 2002

In this study, the InGaP epilayers were grown on the exact and the $2^{\circ}$, $6^{\circ}$, $10^{\circ}$ of cut GaAs substrates by metal-organic vapor phase epitaxy, and the effects of interfacial elastic strains determined by the substrate offcut angle upon the resulting dislocation density of epilayer were investigated for the first time. The elastic strains were obtained from lattice mismatch and lattice misfit by TXRD, and the dislocation densities from epilayer x-ray FWHM. For the offcut angle range used in this study, the elastic strain was maximum and x-ray FWHM minimum at offcut angle $6^{\circ}$. From 11K PL measurements, PL wavelength was found to decrease with an increase of offcut angle. PL intensity was maximum at offcut angle $6^{\circ}$. TEM results showed that the electron diffraction pattern was of typical zincblende structure, and that the dislocation density was minimum for substrate offcut angle $6^{\circ}$. The results obtained in this study, along with the device fabrication process and beam characteristics, clearly demonstrated that the optimum substrate offcut angle for the InGaP/GaAs heterostructures is $6^{\circ}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.89-94
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• 2016

In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.164-167
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• 2010

Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.

• Journal of the Korean Institute of Gas
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• v.24 no.2
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• pp.15-21
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• 2020

Currently, in KS C IEC 60079-10-1, the leakage hole radius of secondary leakage is expressed as a recommendation. Underestimation of leak hole size can lead to underestimation of the calculated values for leak rates, and conservative calculations of leak hole sizes, which are considered for safety reasons, can be overestimated, resulting in an overestimated risk range. This too should be avoided. Therefore, a careful and balanced approach is necessary when estimating the size of leaking holes.Based on this logic, this study examines the stability by grasping the concentration inside the gas box when leaking dangerous substances as a result of experiments based on SEMI S6, an international safety standard applied in the semiconductor industry and The scope of explosion hazardous area was determined by applying the formula of KS C IEC 60079-10-1 according to SEMI F15 leak rate criteria and SEMI S6 leak rate criteria. Based on this, we will examine whether the exhaust performance needs to be improved as an alternative to FAB facilities that are difficult to apply to explosion hazards such as semiconductor industry.