• Title/Summary/Keyword: Vapor flow

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The Growth and Characterization of GaN Films by Direct reaction of Ga and $NH_3$ (금속 갈륨과 암모니아의 직접반응에 의한 GaN 후막성장과 특성 연구)

  • Yang, Seung-Hyeon;Nam, Gi-Seok;Im, Gi-Yeong;Yang, Yeong-Seok
    • Korean Journal of Materials Research
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    • v.10 no.3
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    • pp.241-245
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    • 2000
  • Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

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Effect of the Thickness and the Annealing Conditions of the Catalytic Ni Films on the Graphene Films Grown by a Rapid-Thermal Pulse CVD (Rapid-Thermal Pulse 화학증착법에 의해 증착된 그래핀 박막에서 촉매금속 Ni의 두께 및 열처리 조건의 영향)

  • Na, Sin-Hye;Yoon, Soon-Gil
    • Korean Journal of Materials Research
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    • v.21 no.2
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    • pp.78-82
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    • 2011
  • Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

Optical properties of diamond-like carbon films deposited by ECR-PECVD method (ECR-PECVD 방법으로 증착한 Diamond-Like carbon 박막의 광 특성)

  • Kim, Dae-Nyoun;Kim, Ki-Hong;Kim, Hye-Dong
    • Journal of Korean Ophthalmic Optics Society
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    • v.9 no.2
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    • pp.291-299
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    • 2004
  • DLC films were deposited using the ECR-PECVD method with the fixed deposition condition, such as ECR power, methane and hydrogen gas-flow rates and deposition time, for various substrate bias voltage. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristic of the films were analyzed using the FTIR, Raman, and UV/Vis spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio(ID/IG) of the D and G peak was increased as the substrate bias voltage increased and films hardness was increased. Optical transmittances of DLC film were decreased with increasing deposition time and substrate bias voltage. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

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Performance Characteristics with Various Fuel Composition and Temperature for an External Type Fuel Pump in LPLi System (LPLi 시스템에서 외장형 펌프의 연료조성 및 온도에 따른 성능특성 연구)

  • Nam, Deok-Woo;Yoon, Jun-Kyu;Lim, Jong-Han
    • Journal of Advanced Marine Engineering and Technology
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    • v.35 no.5
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    • pp.566-575
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    • 2011
  • Since LPG (Liquefied petroleum gas) fuel supply system has an advantage of low emission characteristics, many studies have been conducted. In spite of the advantage of LPG supply system, a higher vapor pressure and lower viscosity than diesel or gasoline fuel may cause unstable running of fuel pump by the deterioration in lubrication performance and chemical reaction with rubber parts than that of diesel and gasoline fuel. Therefore its physical properties can cause the deterioration of durability. In this research, we developed an external type LPG pump which has the advantage of the price competitiveness and the convenient maintenance for LPLi system. The experiments were carried out in order to assess characteristics of the external type fuel pump at different fuel composition and temperature. As a result, there aren't any differences between internal and external type pump performance. It is observed that the same level of efficiency was maintained for both pumps as flow rate was increased with higher fuel temperature and more contents of propane in the fuel. And the pressure difference in LPLi system is maintained at constant with the various fuel compositions and temperatures due to their own characteristics of fuel supply system.

Origin of Decreasing the Dielectric Constant and the Effect of Ionic Polarization (유전상수가 낮아지는 원인과 이온 분극의 효과)

  • Oh, Teresa
    • Journal of the Korean Vacuum Society
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    • v.18 no.6
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    • pp.453-458
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    • 2009
  • SiOC film was deposited by the chemical vapor deposition using BTMSM and oxygen mixed precursor. The characteristic of SiOC film varied with increasing of the gas flow rate ratios. The dielectric constant was obtained by C-V measurement using the structure of metal/SiOC film/Si. The space effect due to the steric hindrance between alkyl group at terminal bond of Si-$CH_3$ made the pores, and increased the thickness. However, the SiOC film due to the lowering of the polarization decreased the thickness and then decreased the dielectric constant. After annealing process, the dielectric constant decreased because of the evaporation of the OH or $H_2O$ sites. The thickness was related to the lowering of the dielectric constant by the reduction of the polarization and the thickness decreased with the decrease of the dielectric constant. The refractive index was in inverse proportion to thickness. The trends of the thickness and refractive index did not change after annealing.

Modeling and validation of a parabolic solar collector with a heat pipe absorber

  • Ismail, Kamal A.R.;Zanardi, Mauricio A.;Lino, Fatima A.M.
    • Advances in Energy Research
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    • v.4 no.4
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    • pp.299-323
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    • 2016
  • Cylindrical parabolic solar concentrators of small concentration ratio are attractive options for working temperatures around $120^{\circ}C$. The heat gained can be utilized in many applications such as air conditioning, space heating, heating water and many others. These collectors can be easily manufactured and do not need to track the sun continuously. Using a heat pipe as a solar absorber makes the system more compact and easy to install. This study is devoted to modeling a system of cylindrical parabolic solar concentrators of small concentration ratio (around 5) fitted with a heat pipe absorber with a porous wick. The heat pipe is surrounded by evacuated glass tube to reduce thermal losses from the heat pipe. The liquid and vapor flow equations, energy equation, the internal and external boundary conditions were taken into consideration. The system of equations was solved and the numerical results were validated against available experimental and numerical results. The validated heat pipe model was inserted in an evacuated transparent glass tube as the absorber of the cylindrical parabolic collector. A calculation procedure was developed for the system, a computer program was developed and tested and numerical simulations were realized for the whole system. An experimental solar collector of small concentration, fitted with evacuated tube heat pipe absorber was constructed and instrumented. Experiments were realized with the concentrator axis along the E-W direction. Results of the instantaneous efficiency and heat gain were compared with numerical simulations realized under the same conditions and reasonably good agreement was found.

Light-emitting mechanism varying in Si-rich-SiNx controlled by film's composition

  • Torchynska, Tetyana V.;Vega-Macotela, Leonardo G.;Khomenkova, Larysa;Slaoui, Abdelilah
    • Advances in nano research
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    • v.5 no.3
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    • pp.261-279
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    • 2017
  • Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.

Recovery of water and contaminants from cooling tower plume

  • Macedonio, Francesca;Frappa, Mirko;Brunetti, Adele;Barbieri, Giuseppe;Drioli, Enrico
    • Environmental Engineering Research
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    • v.25 no.2
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    • pp.222-229
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    • 2020
  • Membrane assisted condenser is an innovative membrane operation that exploits the hydrophobic nature of microporous membranes to promote water vapor condensation and recovery. It can be used for water and chemicals recovery from waste gaseous streams. In this work, the testing of membrane condenser for water and ammonia recovery from synthetic streams (i.e., a saturated air stream with ammonia) simulating the plume of cooling tower is illustrated. The modeling of the process was carried out for predicting the membrane-based process performance and for identifying the minimum operating conditions for effectively recovering liquid water. The experimental data were compared with the results achieved through the simulations showing good agreement and confirming the validity of the model. It was found that the recovery of water can be increased growing the temperature difference between the plume and the membrane module (DT), the relative humidity of the plume (RHplume) and the feed flow rate on membrane area ratio. Moreover, the concentration of NH3 in the recovered liquid water increased with the growing DT, at increasing NH3 concentration in the fed gaseous stream and at growing relative humidity of the feed.

Dynamic Modeling & Analysis of Vapor Phase Blowdown of Depressurized Vessel (기체 블로우 다운의 동적 모델링 및 분석)

  • Kim, Kyungwoon;Seo, Ji Won;Hwang, Sungwon;Lee, Yun Ju;Moon, Young Sik
    • Korean Chemical Engineering Research
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    • v.54 no.3
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    • pp.350-359
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    • 2016
  • For accurate estimation over the change of pressure and temperature of the vessel during blowdown period, a new dynamic blowdown model was developed in this work. In particular, heat transfer from the vessel wall to discharge gas at both laminar or turbulent flow in the vessel was embedded to the model to increase the accuracy of blowdown estimation. For thermodynamics, the whole blowdown period was discretized into finite pressure decrement steps, and the step size was adjusted so that the calculation can be more efficiently carried out, while maintaining the model's accuracy. Both Peng-Robinson and Soave-Redlich-Kwong equation of states were applied to the model, and the results were compared each other. Finally, the simulation results was compared with Haque and coworkers' experimental results, and it proved high accuracy of the model.

A STUDY ON THE FORMATION OF IMPERFECTIONS IN CW $CO_2$ LASER WELD OF DIAMOND SAW BLADE

  • Minhyo Shin;Lee, Changhee;Kim, Taiwoung;Park, Heedong
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.639-643
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    • 2002
  • The main purpose of this study was to investigate the formation mechanisms of imperfections such as irregular humps, outer cavity and inner cavity in the laser fusion zone of diamond saw blade. Laser beam welding was conducted to join two parts of blade; mild steel shank and Fe-Co-Ni sintered tip. The variables were beam power and travel speed. The microstructure and elements distributions of specimens were analyzed with SEM, AES, EPMA and so on. It was found that these imperfections were responded to heat input. Irregular humps were reduced in 10.4∼17.6kJ/m heat input range. However there were no clear evidences, which could explain the relations between humps formation and heat input. The number of outer cavity and inner cavity decreased as heat input was increased. Considering both possible defects formations mechanisms, it could be thought that outer cavity was caused by insufficient refill of keyhole, which was from rapid solidification of molten metal and fast molten metal flow to the rear keyhole wall at low heat input. More inner cavities were found near the interface of the fusion zone and sintered segment and in the bottom of the fusion zone. Inner cavity was mainly formed in the upper fusion zone at high heat input whereas was in the bottom at low heat input. Inner cavity was from trapping of coarsened preexist pores in the sintered tip and metal vapor due to rapid solidification of molten metal before the bubbles escaped.

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