• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.135-138
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• 2016

It was observed that the single grain of crystallite growth behavior in AlN (Aluminum Nitride) single crystal growth by PVT (Physical Vapor Transport) method. The single grain of AlN was grown in sequent experiments and adjacent crystallites were joined together after small grain was grown. The sequential results of those grains observed by stereoscopic microscope were reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.76-80
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• 1997

ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.140-142
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• 2019

AlN (Aluminum Nitride) crystal which could be used to substrates for UV LEDs was grown by PVT ((Physical Vapor Transport) method. 3 inch AlN single crystal with a thickenss of 4 mm was grown using Polycrystalline seed for 120 hours. In this report, a result of 3 inch polycrystalline bulk AlN growth behavior using large size crucible and growth condition were reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.148-151
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• 2018

A large single crystal of AlN was grown by PVT (Physical Vapor Transport) method. The AlN crystal shaped hexagonal of the diameter of about 46 mm and the thickness of 7.6 mm was grown using 33 mm seed crystal which was grown and made by ourselves. We tried to find out repeatable growth possibility for AlN crystal growth and then to evaluate the repeatability of the growth condition of the temperature of $1950{\sim}2100^{\circ}C$ and the ambient pressure of 0.1~1 atm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.49-52
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• 2016

The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.272-282
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• 2002

Mercurous bromide ($Hg_{2}0Br_{2}$) crystals hold promise for many acousto-optic and opto-electronic applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method. Due to the temperature gradient between the source and the growing crystal region, the buoyancy-driven convection may occur. The effects of thermal convection on the crystal growth rate was investigated in this study in a horizontal configuration for conditions ranging from typical laboratory conditions to conditions achievable only in a low gravity environment. The results showed that the growth rate increases linearly with Grashof number, and for 0.2 $\leq$ Ar (transport length-to-height, L/H)$\leq$1.0 sharply for Ar=5 and $\Delta$T=30 K. We have also shown that the magnitude of convection decreases with the Ar. For gravity levels of less than $10^{-2}$g the non-uniformity of interfacial distribution is negligible.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.117-124
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• 2010

For Ar=5, Pr=1.18, Le=0.15, Pe=2.89, Cv=1.06, $P_B$=20 Torr, the effects of impurity $(N_2)$ on thermally and solutally buoyancy-driven convection ($Gr_t=3.46{\times}10^4$ and $Gr_s=6.02{\times}10^5$, respectively) are theoretically investigated for further understanding and insight into an essence of thermo-solutal convection occurring in the vapor phase during the physical vapor transport. For $10K{\leq}{\Delta}T{\leq}50K$, the crystal growth rates are intimately related and linearly proportional to a temperature difference between the source and crystal region which is a driving force for thermally buoyancy-driven convection. Moreover, both the dimensionless Peclet number (Pe) and dimensional maximum velocity magnitudes are directly and linearly proportional to ${\Delta}T$. The growth rate is second order-exponentially decayed for $2{\leq}Ar{\leq}5$. This is related to a finding that the effects of side walls tend to stabilize the thermo-solutal convection in the growth reactor. Finally, the growth rate is found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.198-201
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• 2005

Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.