• Journal of Advanced Marine Engineering and Technology
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• v.27 no.1
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• pp.108-116
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• 2003

In this paper, the experimental results of condensation heat transfer were reported for the plate and shell heat exchangers(P&SHE) using R-l34a. An experimental refrigerant loop has been established to measure the condensation heat transfer coefficient of R-l34a in a vertical P&SHE. Two vertical counter flow channels were formed in the P&SHE by three plates of geometry with a corrugated trapezoid shape of a chevron angle of 45$^{\circ}$. Downflow of the condensing R-l34a in one channel releases heat to the cold up flow of water in the other channel. The effect of the refrigerant mass flux, average heat flux, system pressure and vapor quality of R-l34a on the measured data were explored in detail. The results indicate that at a higher vapor quality the condensation heat transfer coefficients are significantly higher. Condensation heat transfer coefficients were increased when the refrigerant mass flux was increased. A rise in the average heat flux causes an slight increase in the hr. Finally, at a higher system pressure the hr is found to be lower. Correlation is also provided for the measured heat transfer coefficients in terms of the Nusselt number.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.6
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• pp.860-867
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• 2001

In this study, condensation heat transfer experiments were conducted with plate and shell heat exchangers(P&SHE) using R-22. An experimental refrigerant loop has been established to measure the condensation heat transfer coefficient of R-22 in a vertical P&SHE. Two vertical counter flow channels were formed in the P&SHE by three plates of geometry with a corrugated trapezoid shape of a chevron angle of 45°. Downflow of the condensing R-22 in one channel releases heat to the cold upflow of water in the other channel. The effect of the refrigerant mass flux, average heat flux, system pressure and vapor quality of R-22 on the measured data were explored in detail. The results indicate that at a higher vapor quality the condensation heat transfer coefficients are significantly higher. A rise in the refrigerant mass flux causes an increase in the h(sub)r. Also, a rise in the average heat flux causes an increase in the h(sub)r. Finally, at a higher system pressure the h(sub)r is found to be slightly lower. Correlation is also provided for the measured heat transfer coefficients in terms of the Nusselt number.

• Journal of Integrative Natural Science
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• v.4 no.4
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• pp.294-297
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• 2011

Quality of PEDOT electrode thin film vapor phase-polymerized on 3-aminopropyltriethoxysilane (APS) self-assembled monolayer (SAM) is very crucial for making an ohmic contact between electrode and semiconductor layer of an organic transistor. In order to improve the quality of PEDOT film, the quality of APS-SAM laying underneath the film must be in the best condition. In this study, in order to improve the quality of APS-SAM, the monolayer was self-assembled on $SiO_2$ surface by a dip-coating method under strictly controlled relative humidity (< 18%RH). The quality of APS-SAM and PEDOT thin film were investigated with a contact angle analyzer, AFM, FE-SEM, and four-point probe. The investigation showed that a PEDOT film grown on the humidity-controlled SAM is very smooth and compact (sheet resistivity = 20.2 Ohm/sq) while a film grown under the uncontrolled condition is nearly amorphous and contains quite many pores (sheet resistivity = 200 Ohm/sq). Therefore, this study clearly proves that a highly improved quality of APSSAM can offer a highly conductive PEDOT electrode thin film on it.

• Journal of the Korean Society of Combustion
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• v.20 no.4
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• pp.42-48
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• 2015

This study was investigated the estimation of VOCs (Volatile Organic Compounds) emission from a gas station tank. To improve the atmosphere environmental quality near the gas station, the installation of vapor recovery system has been expanded recently. Therefore, it was necessary to calculate VOCs emissions from the gas station tank with vapor recovery systems for evaluation of their performance. The VOCs emissions are difficult to measure directly because of various sources and irregularly emission by pressure rise. In this study, VOCs emissions were estimated by simple calculation based on the equation of state for measured pressure, temperature and volume of a gasoline tank at a gas station. The result confirmed that the present national emission factor did not have significant discrepancy with the calculated value.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.871-873
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• 2009

We report on the growth of rubrene ($C_{42}H_{28}$) wire fabricated by thermal evaporation, followed by solvent-vapor annealing for the application of organic thin film transistor. Solvent-vapor annealing was carried out in precisely controlled vapor pressure at elevated temperature. Micro-sized, and elongated rubrene wire was obtained via solvent annealing process reproducibly. Optical image and XRD data shows highly crystalline quality of rubrene wire.

• Journal of the Korean institute of surface engineering
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• v.45 no.5
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• pp.198-205
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• 2012

The corrosion properties of anodized films on aluminium 6070 alloy in a sulfuric acid have been studied. Comparison to evaluate the anodized A6070 and pure 6070 specimen, corrosion tests in $HNO_3$ vapor environment of the 20 wt.% were performed up to 72 hours. Characteristics of film formation and surface morphology were examined by optical microscopy, FE-SEM, and EDS. The oxide film anodized in the sulfuric acid solution contained 5 to 10 wt.% of sulfur. In the initial stages of corrosion, anodized specimens exhibited corrosion resistance than the pure specimen. However, the corrosion conditions in 24 hours, corrosion was far more anodized specimen than pure specimen. Therefore, anodized films contained sulfur, nitric acid vapor in the environment is thought to stimulate corrosion.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.8
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• pp.748-755
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• 2004

Flow boiling heat transfer in small-diameter round tubes has been experimentally studied. The experimental apparatus consisted mainly of refrigerant pump, condenser, receiver, test section of a 1.67 mm inner-diameter round tube and pre-heater for control of refrigerant quality at the inlet of test section. To investigate the effect of bubble nucleation site characteristics of different tube materials, three different tubes of copper, aluminum and brass were used. The ranges of the major experimental parameters were 5∼30 ㎾/$m^2$ of the wall heat flux, 0.0∼0.9 of the inlet vapor quality and the refrigerant mass flux was fixed at 600 kg/$m^2$s. The experimental results showed that the flow boiling heat transfer coefficients in small tubes were affected only by heat flux, but independent of mass flux and vapor quality. The effect of tube material on flow boiling heat transfer was observed small.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.24-36
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• 2019

Recently, considerable progress and many breakthroughs have been achieved in the growth of two-dimensional materials, especially transition metal dichalcogenides (TMDCs), which attract significant attention owing to their unique properties originating from their atomically thin layered structure. Chemical vapor deposition (CVD) has shown great promise to fabricate large-scale and high-quality TMDC films with exceptional electronic and optical properties. However, the scalable growth of high-quality TMDCs by CVD is yet to meet industrial criteria. Therefore, growth mechanisms should be unveiled for a deeper understanding and further improvement of growth methods are required. This review summarizes the recent progress in the growth methods of TMDCs through CVD and other modified approaches to gain insights into the growth of large-scale and high-quality TMDCs.