• Applied Microscopy
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• 제44권4호
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• pp.123-132
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• 2014

Silicene is one of the most interesting two-dimensional materials, because of not only the extraordinary properties similar to graphene, but also easy compatibility with existing silicon-based devices. However, non-existing graphitic-like structure on silicon and unstable free-standing silicene structure leads to difficulty in commercialization of this material. Therefore, substrates are essential for silicene, which affects various properties of silicene and supporting unstable structure. For maintaining outstanding properties of silicene, van der Waals bonding between silicene and substrate is essential because strong interaction, such as silicene with metal, breaks the band structure of silicene. Therefore, we review the stability of silicene on other two-dimensional materials for van der Waals bonding. In addition, the properties of silicene are reviewed for silicene-based heterostructure.

• 접착 및 계면
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• 제24권3호
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• pp.100-104
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• 2023

본 Van der Waals heterostructure 기반의 트랜지스터의 경우 표면에 불포화 결함(dangling bond) 없이 Van der Waals 힘으로만 결합되어 있어 우수한 전자특성을 보이기 때문에 최근 많이 연구되고 있다. 하지만, 트랜지스터에 사용되는 2차원 물질들은 대부분 스카치테이프(mechanical exfoliation) 방법을 기반으로 하는 기초 연구에 머물러 있다. 그렇기 때문에 이를 발전시키기 위해 반데르발스 수직이종접합 전계효과 트랜지스터를 제작하는 데 사용되는 모든 소재를 CVD (chemical vapor deposition)에서 성장된 소재를 사용하였다. 전극으로는 CVD로 성장된 그래핀을 포토리소그래피 공정을 통해 패터닝하여 사용하였으며, CVD로 성장된 MoSe₂를 픽업/전사하는 방식으로, 둘 사이의 반데르발스 이종접합 전계효과 트랜지스터를 제작하였다. 본 연구에서는 이를 통해 제작된 소자의 특성을 보았으며 MoSe₂의 결함 유무에 따라 트랜지스터의 특성에 변화가 있음을 확인하였다.

• 접착 및 계면
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• 제24권1호
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• pp.36-40
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• 2023

반데르발스 물질이란 층간 결합이 약한 반데르발스 결합으로 이루어진 이차원 층상구조를 지닌 물질을 의미하며, 이러한 반데르발스 이차원 소재를 이용한 이종접합 구조 연구는 그래핀이 발견된 이후 꾸준히 연구되고 있다. 본 논문에서는 대기압 화학기상증착법을 통해 성장된 단층 단결정 MoSe₂를 기반으로하는 반데르발스 이종접합 트랜지스터 소자에 대해 보고한다. 최적화된 공정조건에서 성장된 MoSe₂는 원자수준의 결함이 존재하지 않는 것을 밝혔으며, 이를 이용한 트랜지스터 소자 또한 우수한 특성을 보인다는 것을 밝혀내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.100-100
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• 2016

Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.

• 한국초전도ㆍ저온공학회논문지
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• 제25권1호
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• pp.1-5
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• 2023

The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.