• Transactions on Electrical and Electronic Materials
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• 제8권1호
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.98.2-98.2
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• 2012

Thin film solar cells are growing up in the market due to their high efficiency and low cost. Especially CdTe and $CuInGaSe_2$ based solar cells are leading the other cells, but due to the limited percentage of the elements present in our earth's crust like Tellurium, Indium and Gallium, the price of the solar cells will increase rapidly. Copper Zinc Tin Sulfide (CZTS) and Copper Zinc Tin Selenide (CZTSe) semiconductor (having a kesterite crystal structure) are getting attention for its solar cell application as the absorber layer. CZTS and CZTSe have almost the same crystal structure with more environmentally friendly elements. Various authors have reported growth and characterization of CZTSe films and solar cells with efficiencies about 3.2% to 8.9%. In this study, a novel method to prepare CZTSe has been proposed based on selenization of stacked Copper Selenide ($Cu_2Se$), Tin Selenide ($SnSe_2$) and Zinc Selenide (Zinc Selenide) in six possible stacking combinations. Depositions were carried out through RF magnetron sputtering. Selenization of all the samples was performed in Close Space Sublimation (CSS) in vacuum at different temperatures for three minutes. Characterization of each sample has been performed in Field Emission SEM, XRD, Raman spectroscopy, EDS and Auger. In this study, the properties and results of $Cu_2ZnSnSe_4$ thin films grown by selenization will be presented.

• 한국세라믹학회지
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• 제53권6호
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• 센서학회지
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• 제10권5호
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• pp.292-303
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• 2001

본 연구에서는 수평형 전계 방출 소자를 제작하고 그 특성을 측정하였다. 이를 진공자장 센서에 이용하기 위하여 Lorentz 원리를 응용하여 센서를 설계하고 제작하였다. $POCl_3(10^{20}cm^{-3})$ 도핑된 다결정 실리콘을 전계 방출 소자의 음극 및 양극 재료로 이용하였으며 그 두께는 각각 $2\;{\mu}m$였다. PSG(두께 $2\;{\mu}m$)를 희생층으로 사용하여 최종 단계에서 불산을 이용하여 제거하고 승화건조법을 이용하여 소자의 기판 점착 현상을 방지하였다. 제작된 소자를 유리기판 #1 위에 silver paste로 고정시키고 Cr 전극 패드와 와이어본딩 한 뒤 진공내에서 양극접합공정을 이용하여 소자를 $1.0{\times}10^{-6}\;Torr$에서 진공 실장하였다. 실장 후 게터를 활성화하여 내부진공도를 향상시켰다. 이렇게 패키징된 소자는 두달여 기간 동안 특별한 특성저하 없이 잘 동작되었으며 그 이상의 기간에 대해서는 확인하지 못하였다. 패키징된 자장 센서는 패키징하기 전 진공챔버 내에서 보인 특성치와 별다른 차이 없이 잘 동작되었으며 단지 약간의 전류 감소 현상만이 관찰되었다. 측정된 센서의 감도는 약 3%/T로서 작은 값이었으나 그 가능성을 확인할 수는 있었다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.389-396
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• 2002

In XXI century it is necessary to expect the recommencement and development of activities on mastering the Moon. In the long term it is construction of manned lunar bases with industrial, astrophysical, procuring, repair equipment and services. Interplanetary flights from the Moon demand smaller power expenditures, than from the Earth, therefore it is favourable to use its surface for the construction of space-vehicle launching sites. Flights of devices in libration points in the system 'Earth - Moon' are considered. Experience of engineering system creation for the Moon displays the great complexity in provision of serviceability and reliability of friction units. Open friction units should operate under following conditions on the Moon: pressure of environment (vacuum) $p\;>10\;^{-10}$ Pa; wide range of temperature change $+150^{\circ}C\;...170^{\circ}C$; high evaporability of lubricants; influence of temperature gradients and warping of constructions; sublimation of elements of constructional materials; irradiation of different physical nature; effect of micrometeorites; reduced gravitation; influence of abrasive particles of lunar ground; requirements on minimization of size and weight characteristics of a construction (high tension); undesirability (impossibility) of application of liquid and plastic lubricants; vibration, shock, acoustic loadings during start and landings to the Earth; difficulties in repair-regenerative operations in conditions of the Moon etc. Adhesive interaction of conjugated surfaces is the principal reason of possible failures of rubbed units on the Moon. In the research of the Moon automatic interplanetary stations of 'Luna' (USSR), 'Surveyer', 'Apollo' (USA) series were used. Stations executed functions of flying, landing, artificial satellites of the Moon, moon-rovers and manned spacecrafts such as 'Apollo'. The experimental- theoretical researches carried out in the sixtieth years on tribology for conditions of the Moon appeared to be rather useful to engineering of an outer space exploration and the decision of complex problems for the friction units operating in extreme conditions on the Earth. For the creation of highly loaded friction units for the long service life on the Moon it is required not only to use accumulated experience and designed technologies, but also to carry out wide scientific research.

• 한국식생활문화학회지
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• 제21권3호
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• pp.319-324
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• 2006

묵은 배추김치의 휘발성 성분들을 고진공승화법을 이용하여 분리, 농축하였으며, GC-MS로 분석하였다. 총 62가지의 휘발성 성분들이 검출되었으며, 7개의 sulfur-containing compounds, 8개의 terpenes, 5개의 esters, 8개의 acids, 15개의 alcohols, 2개의 nitriles, 2개의 ketones, 11개의 aliphatic hydrocarbons, 4개의 miscellaneous compounds등으로 구성되어 있었다. 이 중 특히, acids인 acetic acid와 butanoic acid가 높은 함량을 나타내었다. 묵은 배추김치에서 향기활성성분을 규명하기 위해 고진공승화법을 이용하여 휘발성 성분들을 분리 및 농축 후 향 추출물 희석분석법으로 flavor dilution(FD) factor($Log_3FD$)를 구하였으며, GC-MS 및 GC-Olfactometry(GC-O)법으로 휘발성 성분들을 동정하였다. 이 결과 묵은 배추김치에서 총 16종의 화합물이 검출되었다. 이중 시큼한 냄새, 군덕내의 특성을 지닌 acetic acid, butanoic acid가 높은 FD factor를 보였으며, acids외에 높은 (FD > 9)를 나타내는 성분들로는 linalool, 2-vinyl-4H-1,3-dithin 등이 있었다.

• 분석과학
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• 제27권4호
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• pp.187-195
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• 2014

잠재지문이 유류된 배경과 지문과의 대조비를 높이기 위한 증강작업 시에 잠재지문의 훼손을 최소화하는 것은 매우 중요하다. 본 실험은 반다공성 표면에 유류된 잠재지문을 시아노아크릴레이트 훈증 처리 후 p-dimethylaminobenzealdehyde (DMAB) 증강시약을 사용하여 그 효과를 확인하고, 증강효과에 미치는 환경적 요인을 분석한 것이다. 실험에 사용된 모든 지문은 시아노아크릴레이트 진공 훈증 후 실온에서 24 시간 건조해 사용하였다. 시아노아크릴레이트 훈증물의 DMAB 형광염색을 위해 표면적, 온도, 기압을 달리한 조건에서 12 시간 단위로 48 시간 동안 승화시켰다. 표면적 영향에 대한 실험에서 물질의 입자크기와 용기의 크기는 DMAB의 승화속도와 형광세기에 영향을 주었다. 또한 무용매접촉법을 적용한 DMAB 형광염색은 36 시간 승화 후 최대 형광세기를 보였고, 일정 표면적 이상에서는 형광세기에 미치는 영향이 저조하였다. 온도에 관한 실험에서 DMAB는 $20^{\circ}C$의 실온에서 가장 잘 승화하였고, 최대형광 세기를 얻을 수 있는 승화시간이 48 시간에서 36 시간으로 단축되었다. 또한 $30^{\circ}C$이상의 상온에서는 오히려 적정 형광세기를 나타내는 승화시간이 길어지고, 형광세기에 미치는 영향도 미약했다. 또한 압력에 관한 실험에서는 압력의 변화가 매우 크지 않는 이상 형광세기가 비진공상태에서의 형광세기보다 약했다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.