• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.264-264
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• 2007

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.242-244
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• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.140.1-140.1
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• 2013

The native silicon-oxide (SiOx) layer at the metal/Silicon interface acts as an electrical resistance to the metal contact of devices. Various methods are proposed for removing this layer, such as sputtering before metal contact formation or high temperature annealing. We studied the chemical evolution of the Au/SiOx/Si system during the annealing at $500^{\circ}C$ using a spatially resolved photoelectron emission method. Scanning photoelectron emission microscopy (SPEM) and core level spectra from local area of the sample show the inhomogeneous oxidation and formation of silicide of Au, as well as valence band spectra reveals the role of Au atoms during the dissociation process of SiOx.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.4
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• pp.163-167
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• 2016

$SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then vacuum annealed for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and electrical resistivity of as deposited $SnO_2$ films were 82.6% in the visible wavelength region and $1.9{\times}10^{-3}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 84.5% and the electrical resistivity also decreased as low as $8.5{\times}10^{-4}{\Omega}cm$. From the observed results, it is concluded that post-deposition vacuum annealing at $200^{\circ}C$ is an attractive condition to optimize the opto-elecrtical properties of $SnO_2$ thin films for the opto-electrical applications.

• Journal of Magnetics
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• v.6 no.3
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• pp.86-89
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• 2001

Microstructure modifications are investigated for annealed Co-based amorphous ribbon in vacuum and open air. X-ray diffraction (XRD) spectra for annealed sample in vacuum indicate atomic arrangements with initial nucleation of hcp-Co crystallite at 38$0^{\circ}C$ annealing temperature. However, the XRD spectra in samples with long annealing times of $t_a\geq300$ min demonstrate sharp and good developed surface crystalline hcp-, fcc- Co and $Co_2$Si phases. The giant magnetoimpedance (GMI) profile at 0.1 MHz displaying one-peak behavior in vacuum annealed samples at T = 38$0^{\circ}C$ irrespective of annealing time $t_a$ from 20 to 480 mim. For the annealed samples in an open air, the GMI profile shows two-peaks for $t_a$ = 20 min annealed sample. However, one of peaks disappears and an asymmetric GMI profile exhibits a drastic step-like change near zero field for $t_a\geq300$min. Such asymmetric GMI characteristics is related to the surface microstructures of fcc-Co, hop-Co and $Co_2$Si crystalline phases.

• Journal of Magnetics
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• v.2 no.2
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• pp.50-54
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• 1997

The vacuum-annealed Ni80Fe20/Ag discontinuous multilayers were found to show giant magnetoresistive behaviors comparable to those of corresponding multilayers annealed at atmospheric pressure in a mixture of H2 and Ar. This vacuum-annealing process will offer potential advantages, enabling a continuous batch process from the deposition to the annealing. Their giant magnetoresistive behaviors were attributed to the magnetostatic coupling that are induced at the edges of the discontinuous magnetic grains. We also present our results about the multilayer patterned into a basic device for the magnetic field sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.212-212
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• 2009

Thermoelectric devices were used to wide range of application. At present, increasing the efficiency of these devices, in particular, through the preparation of materials showing a high thermoelectric figure of merit, Z, $Bi_2Te_3$ and $Sb_2Te_3$ thin films on Si substrates are deposited by flash evaporation method for thermopile sensor applications. In order to enhance the thermoelectric properties of the thin film, annealing in high vacuum is carried out in the temperature range from 200 to $350^{\circ}C$. The microstructure of the film is investigated by XRD and SEM. The resistivity and Seebeck coefficient of the films are measured by Van der Pauw method and hot probe method respectively. At elevating annealing temperature, the crystallinity and thermoelectrical properties of films are improved by increasing the size of grains. At excessive high annealing temperatures, it is shown that Seebeck coefficient of films is decreased because of Te evaporation. By optimizing the annealing conditions, it is possible to obtain a high performance thin film with a thermoelectric properties.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.181-181
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• 1999

Self-assembled monolayers(SAMs) of alkanethiol have been formed on the Cu(111) surfaces in vacuum. The thermal behavior of octanethiol-based SAMs on the Cu(111) surface have been examined in ultrahigh vacuum. Using X-ray photoelectron spectroscopy (XPS), it is found that the monolayers are stable up to about 500K in vacuum. Decomposition is signaled by a decrease in the intensity of C ls peak, accompanied by an increase of the intensity of the Cu 2p peak. However, the intensity of the S 2p peak doesn't change much as a function of annealing temperature. Thermal the decomposition mass spectra show that n-alkene is the predominant species desorbing from the surface in the 500-600K temperature range. The totality of these data leads to the conclusion that the monolayers decompose through the S-C bond cleavage by hydrogen elimination reaction, resulting in the desorption of hydrocarbon moiety as n-alkene. Following this initial decomposition step, Cu2S layers are observed on the surface. For comparison, attempts were also made to examine the thermal behavior of octanethiol-based SAMs on the Cu(111) surface in air. It has been shown that the SAMs on the Cu(111) surfaces begin to desorb with the oxidation of the thiolate to sulfonate at 400K. Upon annealing to 450K, the monolayer has almost completely desorbed as indicated by the virtual disappearance of the S 2p peak.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.705-709
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• 2005

In order to clarify the heat annealing process for Magnesium Oxide (MgO), cathodoluminescent (CL) analysis was performed. Our results in the present work prove that the heat annealing has effects on not only removing water from the surface of MgO, but also increasing density of O and Mg defect pairs. It is the first work that the influence of annealing process on physical properties of the vacuum evaporated MgO thin films by using CL spectra.