• 제목/요약/키워드: Vacuum ultraviolet

검색결과 213건 처리시간 0.026초

LCD 백라이트용 Xe계 플라즈마 평판 램프의 구동 전압 Pulse의 조건에 따른 방전 특성 연구 (Discharge Characteristics of Xe Plasma Flat Lamp for LCD Backlight According to Operating Voltage Pulse)

  • 권은미;김혁환;이원종
    • 한국재료학회지
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    • 제13권4호
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    • pp.271-278
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    • 2003
  • Conventional backlight for liquid crystal display (LCD) uses mercury which leads to environmental pollution. In this study, characteristics of AC coplanar type mercury-free plasma flat lamp have been studied. Pollution-free Xe-He is adopted as a discharge gas system. Since the Xe gas has a lower efficiency in generating vacuum ultraviolet (VUV) than mercury, the improvement of luminance and luminous efficiency in the Xe gas system is very important. The electrode, dielectric, and phosphor layers constituting lamp are formed on the bottom glass by the screen printing method. The effects of pulse shape, on-time, and pulse frequency on the luminance and luminous efficiency have been examined. For Xe(5%)-He gas, the lamp exhibits higher efficiency with sharper pulse shape, higher peak voltage, and shorter pulse on-time (up to 2 $\mu\textrm{s}$). Higher efficiency and lower consumption of power were obtained at 30 kHz than at 60 kHz. The collision of ion to bottom electrodes is a dominant factor to raise the lamp temperature. Therefore the high voltage and low current discharge system is necessary for reduction of the lamp temperature as well as for enhancement of the luminous efficiency.

Simulation of Low Temperature Plasmas for an Ultra Violet Light Source using Coplanar Micro Dielectric Barrier Discharges

  • Bae, Hyowon;Lee, Ho-Jun;Lee, Hae June
    • Applied Science and Convergence Technology
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    • 제25권6호
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    • pp.138-144
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    • 2016
  • The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.

전구체의 특성 및 AlF3 융제가 청색 발광의 BAM:Eu 형광체의 특성에 미치는 영향 (Effects of the Characteristics of Precursor Powders and AlF3 Flux on the Properties of Blue-Emitting BAM:Eu Phosphor Powders)

  • 조중상;이상호;강윤찬
    • 한국재료학회지
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    • 제18권3호
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    • pp.137-142
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    • 2008
  • Blue-emitting BAM:Eu phosphor powders were formed by post-treatment of precursor powders with hollow or dense morphologies. The morphologies of the precursor powders obtained by spray pyrolysis were controlled by changing the preparation conditions and by changing the type of spray solution. The effects of the morphologies of the precursor powders on the characteristics of the BAM : Eu phosphor powders reacted with $AlF_3$ flux were investigated. Precursor powders with a spherical shape and a hollow morphology produced BAM : Eu phosphor powders with a plate-like morphology, a fine size and a narrow size distribution. On the other hand, precursor powders with a spherical shape and dense morphology produced BAM : Eu phosphor powders with a plate-like morphology and a large size. $AlF_3$ flux improved the photoluminescence intensities of the BAM : Eu phosphor powders. The photoluminescence intensity of the fine-sized BAM : Eu phosphor powders with a plate-like morphology was 90% of the commercial product under vacuum ultraviolet conditions.

분리형 펄스 레이져 증착법을 이용한 ZnO 박막의 특성에 관한 연구 (Preparation of High Quality ZnO Thin Films by Separated Pulsed Laser Deposition)

  • 박상무;이붕주
    • 한국전기전자재료학회논문지
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    • 제21권9호
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    • pp.818-824
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    • 2008
  • The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

Plasma Etching Process based on Real-time Monitoring of Radical Density and Substrate Temperature

  • Takeda, K.;Fukunaga, Y.;Tsutsumi, T.;Ishikawa, K.;Kondo, H.;Sekine, M.;Hori, M.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.93-93
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    • 2016
  • Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

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Structural and Electrical Properties of Fluorine-doped Zinc Tin Oxide Thin Films Prepared by Radio-Frequency Magnetron Sputtering

  • Pandey, Rina;Cho, Se Hee;Hwang, Do Kyung;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.335-335
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    • 2014
  • Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

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BaO-MgO-$Al_2O_3$계에서 조성변화에 따른 청색 형광체의 발광특성 (The Photoluminance Properties of Blue Phosphor with Chemical Composition in BaO-MgO-$Al_2O_3$ System)

  • 박상현;공명선;이임렬
    • 한국재료학회지
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    • 제8권6호
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    • pp.520-525
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    • 1998
  • 활성제로 $Eu^{+2}$을 사용한 BaO-MgO-$AI_2O_3$에서 화학조성 변화에 따른 청색 형광체의 광학특성을 254nm 자외선 및 147nm의 진공자외선 하에서 측정하였다. 동 형광체는 자외선 및 진공자외선 조사를 받아 주 파장이 445nm 인 가시광선의 청색을 발하는 형광체이다. $BaMgAI_{14}O_{23}$ : Eu 농도에 따라 증가하였으며 진공자외선의 경우에는 5%농도에서 최대가 됨을 알 수 있었다. 자외선 및 진공자외선 모두에서 $BaMgAI_{10}O_{17}$형광체의 청색 발광강도는$BaMgAI_{14}O_{23}$보다 좋았다. 또한 $BaMgAI_{10}O_{17}$에서 Ba대신 Ca이나 Sr을 0.1mole 치환시킨 $Ba_{0.9}Ca_{0.1}MgAI_{10}O_{17}$$Ba_{0.9}Sr_{0.1}MgAI_{10}O_{17}$ 형광체로 광특성을 더욱 개선할 수 있었다.

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Polybenzimidazole (PBI) Coated CFRP Composite as a Front Bumper Shield for Hypervelocity Impact Resistance in Low Earth Orbit (LEO) Environment

  • Kumar, Sarath Kumar Sathish;Ankem, Venkat Akhil;Kim, YunHo;Choi, Chunghyeon;Kim, Chun-Gon
    • Composites Research
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    • 제31권3호
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    • pp.83-87
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    • 2018
  • An object in the Low Earth Orbit (LEO) is affected by many environmental conditions unlike earth's surface such as, Atomic oxygen (AO), Ultraviolet Radiation (UV), thermal cycling, High Vacuum and Micrometeoroids and Orbital Debris (MMOD) impacts. The effect of all these parameters have to be carefully considered when designing a space structure, as it could be very critical for a space mission. Polybenzimidazole (PBI) is a high performance thermoplastic polymer that could be a suitable material for space missions because of its excellent resistance to these environmental factors. A thin coating of PBI polymer on the carbon epoxy composite laminate (referred as CFRP) was found to improve the energy absorption capability of the laminate in event of a hypervelocity impact. However, the overall efficiency of the shield also depends on other factors like placement and orientation of the laminates, standoff distances and the number of shielding layers. This paper studies the effectiveness of using a PBI coating on the front bumper in a multi-shock shield design for enhanced hypervelocity impact resistance. A thin PBI coating of 43 micron was observed to improve the shielding efficiency of the CFRP laminate by 22.06% when exposed to LEO environment conditions in a simulation chamber. To study the effectiveness of PBI coating in a hypervelocity impact situation, experiments were conducted on the CFRP and the PBI coated CFRP laminates with projectile velocities between 2.2 to 3.2 km/s. It was observed that the mass loss of the CFRP laminates decreased 7% when coated by a thin layer of PBI. However, the study of mass loss and damage area on a witness plate showed CFRP case to have better shielding efficiency than PBI coated CFRP laminate case. Therefore, it is recommended that PBI coating on the front bumper is not so effective in improving the overall hypervelocity impact resistance of the space structure.

대구시내 미용실의 보건위생 실태 (Status of Health Hygiene of Some Beauty Shop in Taegu City)

  • 채용곤
    • 환경위생공학
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    • 제16권4호
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    • pp.9-20
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    • 2001
  • The objective of this study was to improve sanitary conditions at the beauty shops by informing the owners and employees to be aware of the public health. The data were obtained by the Physical investigation (August 1 to 30, 2001) of the sanitary Problems at 112 beauty shops in Daegu Metrpolitan area and by the surveys from the employees and customers. By analysis these data with SAS/PC+(ver. 6.12) and $x^2-test$, we have obtained the following results. 1. The numbers of the beauty shop workers (67.86% of the shops) were two including the owner, and only 18.75% of the workers had the regular public health training session. Even at the training sessions, no public health specialist was available as an instructor. 2. Sanitary conditions of the floor (92.76%), washer (88.93%) and rest room (74.11%) at the beauty shops were satisfactory. However, only 3.57% of the beauty shop used the vacuum cleaner that would be far more effective than the bloom to remove hairs from the floor. 3. About 91.07% (102 shops) did not or poorly sterilize equipments, and 91.76% (103 shops) did not store the sterilized or non-sterilized equipments separately. The shops that had the ultraviolet sterilizer that is required by the public health regulation were 53.57% (60 shops), and only 2.67% (3shops) actually used it. 4. About 82.14% (72 shops) used Oxyclean and detergent for washing the fabrics such as towels and gowns. About 11.61% (13 shops) used only detergent and 3.57% (4 shops) used the boiling sterilization method. No shop used the customer gown once per customer, and only 2.68% (3 shops) washed the used gown daily.

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인체혈청 중 펜톡시필린의 정량을 위한 HPLC 분석법의 점증 및 단일용량 투여에 의한 약물동태 (Validation of a HPLC Method for Determination of Pentoxifylline in Human Serum and Its Application to Single-dose Pharmacokinetics)

  • 성민경;박효민;김나형;정수연;고은정;이화정
    • 한국임상약학회지
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    • 제15권1호
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    • pp.46-49
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    • 2005
  • A simple HPLC method was employed for the determination of pentoxifylline in human serum. After addition of internal standard (IS, 50 uL of 3 ug/mL chloramphenicol methanol solution) into the serum sample, the drug and IS were extracted by dichloromethane. Following a 1-min vortex-mixing and a 15-min centrifugation at 3500 게m, the organic phase was transferred and evaporated to dryness under a vacuum. The residue was reconstituted with 120 ${\mu}L$ of mobile phase and 50 ${\mu}L$ was injected into C18 column with a mobile phase composed of 0.034 M phosphoric acid adjusted to pH 4 with 10 M NaOH and acetonitrile (75:25, v/v). The samples were detected using an ultraviolet detector at 273 nm. The method was simple, specific and validated with a limit of 10 ng/mL. Intra- and inter-day precision and accuracy were acceptable for all quality control samples including the lower limit of quantification. The applicability of this method was evaluated by analysis of human serum after oral administration of a single 400 mg dose to 8 healthy subjects. The pharmacokinetic parameters for pentoxifylline in human subjects were calculated using WinNonlin program. As a result, $AUC_{t},\;C_{max},\;T_{max}$ and $t_{1/2}$ were $962.28{\pm}645.69\;ng{\cdot}/mL$, $132.82{\pm}42.05$ ng/mL, $2.06{\pm}2.68$ hr and $8.74{\pm}4.38$ hr, respectively. Based on the results, this validated method appears to be useful fur the pharmnacokinetic study of pentoxifylline in humans.

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