• 한국안전학회지
• /
• 제31권3호
• /
• pp.42-46
• /
• 2016

In LCD Display or semiconductor manufacturing processes, the anti-static technology of glass substrates and wafers becomes one of the most difficult issues which influence the yield of the semiconductor manufacturing. In order to overcome the problems of wafer surface contamination various issues such as ionization in decompressed vacuum and inactive gas(i.e. $N_2$ gas, Ar gas, etc.) environment should be considered. Soft X ray radiation is adequate in air and $O_2$ gas at atmospheric pressure while UV radiation is effective in $N_2$ gas Ar gas and at reduced pressure. At this point of view, the "vacuum ultraviolet ray ionization" is one of the most suitable methods for static elimination. The vacuum ultraviolet can be categorized according to a short wavelength whose value is from 100nm to 200nm. this is also called as an Extreme Ultraviolet. Most of these vacuum ultraviolet is absorbed in various substances including the air in the atmosphere. It is absorbed substances become to transit or expose the electrons, then the ionization is initially activated. In this study, static eliminator based on the vacuum ultraviolet ray under the above mentioned environment was tested and the results show how the ionization performance based on vacuum ultraviolet ray can be optimized. These vacuum ultraviolet ray performs better in extreme atmosphere than an ordinary atmospheric environment. Neutralization capability, therefore, shows its maximum value at $10^{-1}{\sim}10^{-3}$ Torr pressure level, and than starts degrading as pressure is gradually reduced. Neutralization capability at this peak point is higher than that at reduced pressure about $10^4$ times on the atmospheric pressure and by about $10^3$ times on the inactive gas. The introductions of these technology make it possible to perfectly overcome problems caused by static electricity and to manufacture ULSI devices and LCD with high reliability.

• 한국광학회지
• /
• 제15권4호
• /
• pp.325-330
• /
• 2004

진공자외선 파장영역에서 광학부품의 분광특성을 측정할 수 있는 중수소광원과 진공단색화장치, 시료챔버 및 광 검출기 구조의 진공자외선 분광반사율계를 제작하였다. 제작된 진공자외선 분광반사율계는 115nm∼330 nm의 분광영역에서 약 3.0${\times}$$10^{-4}$ Pa의 기압에서 작동하였다. 253.652 nm와 184.95 nm의 수은 선스펙트럼으로 진공단색화장치의 파장을 교정하여 그 분해능이 0.012 nm이고, 파장정확도가 $\pm$0.03 nm 임을 확인하였다. 중수소 광원을 이용하여 115 nm∼230 nm 파장대역의 진공자외선 영역에서 여러 가지 광학부품들에 이용되고 있는 재료(MgF$_2$, CaF$_2$, BaF$_2$, SiO$_2$, Sapphire)들의 분광투과율과 반사율을 측정하였다.

• 한국재료학회지
• /
• 제16권8호
• /
• pp.485-489
• /
• 2006

The preparation conditions of $YBO_3$:Eu phosphor particles having the maximum photoluminescence intensity under vacuum ultraviolet in the spray pyrolysis were optimized. The $YBO_3$:Eu phosphor particles prepared from spray solution with stoichiometric amount of boric acid had the maximum photoluminescence intensity. The $YBO_3$:Eu phosphor particles with pure phases were formed at low post-treatment temperatures because of fast reaction of yttrium and boron components without volatilization of boron component. The prepared $YBO_3$:Eu phosphor particles by spray pyrolysis had fine size, narrow size distribution and regular morphology. The photoluminescence intensity of the prepared $YBO_3$:Eu phosphor particles under vacuum ultraviolet was 103% of the commercial $(Y,Gd)BO_3$:Eu phosphor particles.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
• /
• pp.183-183
• /
• 2006

• 반도체디스플레이기술학회지
• /
• 제20권2호
• /
• pp.1-5
• /
• 2021

Ultraviolet (UVA)-emissive BaSiO₃:Ce³⁺ phosphor was astonishingly reproducible by vacuum-sintering at a high temperature through a simple solid-state reaction method. It was conveniently formed in BaSiO₃ phases. The compound showed the UVA emission and the UV-VUV excitation due to 5d-4f transitions from Ce³⁺ ions: emission peak at 380 nm with a 56 nm width. Its temperature dependence and vacuum UV excitability were examined for practical application as an excimer discharge lamp, which showed the high thermal stability (80% at 100℃) and the strong VUV excitations at 145 nm and 172 nm.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제37회 하계학술대회 초록집
• /
• pp.375-375
• /
• 2009

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1986년도 하계학술대회논문집
• /
• pp.396-399
• /
• 1986

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2007년도 제32회 학술대회 초록집
• /
• pp.147-147
• /
• 2007

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제37회 하계학술대회 초록집
• /
• pp.368-368
• /
• 2009

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
• /
• pp.156-156
• /
• 1997