• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.394-394
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• 2012

We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.415-415
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• 2010

면방전 구조의 AC-PDP는 페닝 혼합 기체 중에서 Xe 플라스마에서 발생되는 VUV (Vacuum Ultra Violet) 에 의해 들뜬 형광체로부터 가시광이 발생된다. Xe 여기종은 828 nm의 공명준위를 거쳐 147 nm의 진공자외선을 방출하며 823 nm의 준안정준위에서 분자선을 거쳐 173 nm의 진공 자외선을 낸다. 이러한 Xe 여기종의 밀도를 측정하기 위해서는 828 nm와 823 nm의 레이저를 외부에서 인위적으로 조사하여 측정하면 IR (Infrared)의 흡수전과 흡수후의 빛의 세기로 Xe 여기종의 밀도 및 분포를 계산할 수 있다. 본 실험에서는 823 nm에 초점을 두었으며 LAS (Laser Absorption Spectroscopy) 기법을 통하여 He-Ne-Xe(15%, 20 %, 30%) 400Torr의 3종 기체의 Xe 함량에 따른 시공간의 Xe($1s_5$) 여기종 밀도 분포와 방전효율을 관측하였다. 최근 3전극 면방전형 AC-PDP 효율 향상을 위해 3종 기체의 Xe함량비의 방전기체에 대한 연구가 수행되고 있다. 이러한 기초 데이터는 혼합기체 조건에 따른 면방전 구조의 3전극 AC-PDP의 발광 효율을 개선하는 데 유용한 자료로 활용될 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.968-971
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• 2003

Due to a low efficiency of phosphor with large Stoke shift in Vacuum Ultra Violet (VUV) excitation environment, new PDP phosphors which can be excited in UV excitation environment need to be developed. In this study, $Zn_2SiO_4:Tb$ phosphor was synthesized by solid-state reaction method at $1300^{\circ}C$ with varying Tb concentration, and its cross relaxation effect was observed by Photoluminescence (PL) measurement. In order to decrease $^5D_3{\to}7F_j$ transition with blue emission in $Zn_2SiO_4:Tb$ phosphor, Dy, co-activator element, was added to $Zn_2SiO_4:Tb$ phosphor. In 254nm excitation environment, broad-emission peak was observed around 524nm, green emission.

• Composites Research
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• v.30 no.1
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• pp.7-14
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• 2017

In this paper, the inter-lamina shear strength (ILSS) of multi-wall carbon nanotube (MWNT) reinforced carbon fiber reinforced plastics (CFRP) and thin-ply composites were verified under low earth orbit (LEO) space environment. CFRP, MWNT reinforced CFRP, thin-ply CFRP and MWNT reinforced thin-ply CFRP were tested after aging by using accelerated ground simulation equipment. The used ground simulation equipment can simulate high vacuum ($2.5{\times}10^{-6}torr$), atomic oxygen (AO, $9.15{\times}10^{14}atoms/cm^2{\cdot}s$), ultraviolet light (UV, 200 nm wave length) and thermal cycling ($-70{\sim}100^{\circ}C$) simultaneously. The duration of aging experiment was twenty hours, which is an equivalent duration to that of STS-4 space shuttle condition. After the aging experiment, ILSS were measured at room temperature ($27^{\circ}C$), high temperature ($100^{\circ}C$) and low temperature ($-100^{\circ}C$) to verify the effect of operation temperature. The MWNT and thin-ply shows good improvement of ILSS at ground condition especially with the thin-ply. And after LEO exposure large degradation of ILSS was observed at MWNT added composite due to the thermal cycle. And the degradation rate was much higher under the high temperature condition. But, at the low temperature condition, the ILSS was largely recovered due to the matrix toughening effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.331-331
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• 2014

3족 질화물에 기반한 발광다이오드는 비소화물이나 인화물에 비해 여러 가지 장점을 가져 각광받아왔다. 특히, (Al)GaN 에 기반한 자외선 영역 발광 다이오드는 자외선 경화, 소독 등의 여러 가지 응용 가능성을 가진다 [1]. 하지만, 심자외선 영역으로 갈수록 높은 접촉 저항과 투명전극에서의 광흡수에 의해 전류주입 효율과 광추출 효율이 감소하여 결국 외부양자 효율이 더욱 열화되는 특성을 보인다. 이는 넓은 밴드갭을 가지는 물질을 이용하여 p-(Al)GaN 층에서 오믹접촉을 이루어야만 해결이 가능하지만 아직까지 이러한 결과가 보고된 바 없다. 본 연구에서는, 우리는 넓은 밴드갭을 가지는 silicon dioxide (SiO2) 에 전기장을 인가하여 p-GaN, and p-AlGaN 층에 전도성 필라멘트를 형성하여 전기전도도를 부여하는 연구를 진행하였다. p-GaN 과 p-AlGaN 위에서 5 nm 두께의 SiO2는 schottky 한 특성과 280 nm의 파장대역에서 약 97%의 투과율을 보였다. 비록 schottky 장벽이 형성되었지만, 전기전도도가 크게 향상되었으며 심자외선 영역에서 매우 낮은 흡수율을 보였다. 이는 기존의 증착후 열처리를 거쳐 제조된 전극에 비하여 우수한 특성을 지니며 향후 심자외선 영역 발광다이오드의 p-(Al)GaN 층 위에 오믹접촉을 이룰수 있는 가능성을 제시한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.307-307
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• 2012

현재 태양전지 시장은 결정질 태양전지가 주류를 차지하고 있으며 이중 상대적으로 재료비가 저렴한 다결정 실리콘 기반의 고효율 태양전지 제작에 대한 연구가 활발히 진행되고 있다. 이에 본 실험에서는 표면 텍스처링 방법에 따른 태양전지 소자의 특성 변화에 대한 실험을 진행하였다. 일반적으로 다결정 태양전지의 경우 산성용액을 이용한 표면 텍스처링을 실시하는데 이 경우 표면에 형성된 텍스처 구조는 산성용액의 등방성 식각으로 인해 반구(Hemisphere) 형태의 구조를 띄게 된다. 이는 표면에서의 광흡수율을 떨어뜨려 태양전지 소자의 효율을 저해하는 원인이 된다. 따라서 본 연구에서는 다결정 실리콘 태양전지의 효율 향상을 위해 레이저를 이용한 차세대 텍스처링 방법에 대한 연구를 진행하였다. 우선 355 nm 파장의 Ultra-Violet (UV) 레이저를 소자 표면에 조사함으로써 $10{\mu}m$의 dot diameter와 depth를 갖는 honey comb 배열의 hole을 형성하였다. 이후 산성용액에 담가 레이저 공정 후의 slag를 제거해 최종적으로 피라미드 형태의 구조를 형성하였다. Suns_Voc 효율 측정 결과 산성용액을 이용한 텍스처링의 경우 개방 전압이 611 mV, 곡선인자가 81%, 효율이 17.32%로 각각 측정되었다. 반면, 레이저 텍스처링의 경우에서는 개방전압이 631 mV, 곡선인자가 83%, 효율이 18.33%로 용액 텍스처링 방법보다 우수한 특성을 보였다. 이는 UV 레이저 텍스처링을 통해 형성된 피라미드 형태의 표면 구조에서의 광흡수율이 산성용액을 이용한 방법보다 우수함을 말하며, 따라서 태양전지의 주요 파라미터가 향상된 결과를 보였다. 본 실험에서는 레이저 텍스처링을 통한 태양전지 제작에 대한 방법을 제시하며, 향후 고효율의 다결정 태양전지 제작에 있어 기여 할 것으로 판단된다.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.212-218
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• 2012

The optical properties of AZO thin films prepared by the RF mangnetron sputtering system was studied to research the dependance of chemical properties of substrate. The substrate was the SiOC film deposited by Inductively coupled plasma chemical vapor deposition with various gas flow rate of $O_2$ and Ar (DMDMOS). In accordance with the increase of Ar gas flow rates, the Si-O bond in the SiOC film increased and then progressed the amorphism. The roughness of AZO grown on SiOC film with high degree of amorphism decreased and then improved the flatness of surfaces. Moreover, the ultra violet emission with high intensity was spontaneously induced in the AZO film growed on SiOC film with high degree of amorphism.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.