• Title/Summary/Keyword: Vacuum sintering

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반도성 층의 2단계 소결에 의한 염료감응형 태양전지의 특성

  • Bong, Seong-Jae;Ma, Jae-Pyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.436-437
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    • 2012
  • 염료감응형 태양전지의 성능을 향상시키기 위해서는 염료에서 여기된 전자가 TiO2 계면을 따라 TCO (Transparent Conductive Oxide)로 이동하지 않고 산화된 염료나 전해질과 재결합하는 것을 차단하는 것, 그리고 염료에 TCO의 전기적 접촉을 차단하는 것 등이 필요하다. 이를 위해 본 연구에서는 TiO2 박막층 위에 차단층 TiO2를 $450^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$에서 각각 소결한 뒤Blocking layer로서의 온도에 따른 상(phase) 변화를 통해 염료감응형 태양전지의 효율 향상에 대해 실험하였다. 기존 염료 감응형 태양전지에 대한 보고에 의하면 $600^{\circ}C$ 이상에서의 상은rutile 상임을 확인할 수 있다. 실험결과 Blocking layer로서의 TiO2를 $750^{\circ}C$에서 $750^{\circ}C$에서 sintering 했을 때, 가장 좋은 전기적 특성을 나타내었다.

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Effect of Plasma Treatment with O2, Ar, and N2 Gas on Porous TiO2 for Improving Energy Conversion Efficiency of DSSC (Dye Sensitized Solar Cell)

  • Gang, Go-Ru;Sim, Seop;Cha, Deok-Jun;Kim, Jin-Tae;Yun, Ju-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.202-202
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    • 2012
  • 염료감응태양전지(DSSC)의 광변환 효율을 향상시키기 위하여 진공챔버에서 450도 고온에서 O2, Ar, and N2 혼합가스를 주입하여 다양한 plasma로 TiO2 박막을 처리하면서 소성시켰다. TiO2 표면을 cleaning하고 활성화함으로서 염료의 결합력을 향상시키는 것 외에 TiO2 내부의 oxygen vacancy를 변화를 관찰하였다. 실험에 사용한 박막은 glass 위에 FTO 박막을 입히고, 다공성 TiO2 나노입자 박막을 코팅하여 제조하였다(porous TiO2 나노입자(${\sim}12{\mu}m$)/FTO(Fluorine doped Tin oxide; $1{\mu}m$)/glass). 완성된 광전극에 대해서 XRD, XPS, EIS, FE-SEM 등을 이용하여 분석하였다. 또한 이렇게 전처리된 광전극을 사용한 DSSC를 제작하였다. 그리고 Solar-simulator를 통해 그 효율을 측정하여 '플라즈마환경에서 소성된 광전극에 대한 DSSC의 광변환효율에 미치는 효과'을 고찰하였다.

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High Temperature Stability of Sintered Bulk CrN (CrN 소결체의 고온 안정성)

  • Choi, J.H.;Lee, D.B.
    • Journal of the Korean institute of surface engineering
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    • v.40 no.1
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    • pp.39-43
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    • 2007
  • The pure CrN powders oxidized to $Cr_2O_3$ noticeably above $850^{\circ}C$ in air. When these powders were sintered into bulk samples at $1500^{\circ}C$ under 40 atm of $N_2$ pressure, the CrN phase partly changed into the $Cr_2N$ phase, owing to the partial loss of nitrogen from CrN. When the bulk sample was heated at $1000-1200^{\circ}C$ for 100 hr under vacuum, the CrN phase also progressively changed into $Cr_2N$. At the same time, a relatively thin $Cr_2O_3$ layer formed on the bulk sample due to the reaction of chromium with residual oxygen in vacuum.

High Efficiency Dye-Sensitized Solar Cells: From Glass to Plastic Substrate

  • Go, Min-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.294-294
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    • 2010
  • Over the last decade, dye-sensitized solar cell (DSSC) has attracted much attention due to the high solar-to-electricity conversion efficiency up to 10% as well as low cost compared with p-n junction photovoltaic devices. DSSC is composed of mesoporous TiO2 nanoparticle electrodes coated with photo-sensitized dye, the redox electrolyte and the metal counter electrode. The performances of DSSC are dependent on constituent materials and interface as well as device structure. Replacing the heavy glass substrate with plastic materials is crucial to enlarge DSSC applications for the competition with inorganic based thin film photovoltaic devices. One of the biggest problems with plastic substrates is their low-temperature tolerance, which makes sintering of the photoelectrode films impossible. Therefore, the most important step toward the low-temperature DSSC fabrication is how to enhance interparticle connection at the temperature lower than $150^{\circ}C$. In this talk, the key issues for high efficiency plastic solar cells will be discussed, and several strategies for the improvement of interconnection of nanoparticles and bendability will also be proposed.

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Luminescent characteristics with coupling structure of Eu for ZnO:Eu Phosphor (Zno:Eu 형광체의 Eu 결합 구조에 따른 발광 특성)

  • 박용규;한정인;조황신;주성후
    • Electrical & Electronic Materials
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    • v.10 no.8
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    • pp.763-769
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    • 1997
  • In this study we have synthesized Zno:Eu phosphors under various sintering atmospheres and temperatures. The analysis of X-ray diffractometer measurement indicates that for Zno:EuCl$_3$ phosphors sintered in air and vacuum 뗘 exists in the host lattice as Eu$_2$O$_3$and EuOCl respectively. From the photoluminescence for the phosphors sintered in vacuum Eu removes the broad-band emission of the ZnO host consequently isolating the red emission due to Eu$^{3+}$ ion and improves the color purity of red emission. The photoluminescence excitation and time resolving spectrum measurements suggest that energy-transfer process occurres from the self-activated defect center in ZnO host the Eu$^{3+}$ ion which exist in the host lattice in the form of EuOCl.

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Fabrication of Large-Size Alumina by Pressure-Vacuum Hybrid Slip Casting

  • Cho, Kyeong-Sik;Lee, Seung Yeul
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.396-401
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    • 2013
  • The size of various alumina ceramics used in the semiconductor and display industries must be increased to increase the size of wafers and panels. In this research, large alumina ceramics were fabricated by pressure-vacuum hybrid slip casting (PVHSC) employing a commercial powder, followed by sintering in a furnace. In the framework of the PVHSC method, the consolidation occurs not only by compression of the slip in the casting room but also by suction of the dispersion medium from the casting room. When sintered at $1650^{\circ}C$ for 4 h, the fabricated large-size alumina ($1,550{\times}300{\times}30mm^3$) exhibited a dense microstructure corresponding to more than 99.2% of the theoretical density and a high purity of 99.79%. The flexural and compressive strengths of the alumina plate were greater than 340 MPa and 2,600 MPa, respectively.

Ultraviolet-emissive BaSiO3:Ce3+ Phosphor for VUV Excimer Lamp

  • Lee, Jugyeong;Afandi, Mohammad M.;Kim, Jongsu;Heo, Hoon
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.2
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    • pp.1-5
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    • 2021
  • Ultraviolet (UVA)-emissive BaSiO3:Ce3+ phosphor was astonishingly reproducible by vacuum-sintering at a high temperature through a simple solid-state reaction method. It was conveniently formed in BaSiO3 phases. The compound showed the UVA emission and the UV-VUV excitation due to 5d-4f transitions from Ce3+ ions: emission peak at 380 nm with a 56 nm width. Its temperature dependence and vacuum UV excitability were examined for practical application as an excimer discharge lamp, which showed the high thermal stability (80% at 100℃) and the strong VUV excitations at 145 nm and 172 nm.

Vacuum Carburizing System for Powdered Metal Parts & Components

  • Kowakewski, Janusz;Kucharski, Karol
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1018-1021
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    • 2006
  • Powdered metal parts and components may be carburized successfully in a vacuum furnace by combining carburizing technology $VacCarb^{TM}$ with a hi-tech control system. This approach is different from traditional carburizing methods, because vacuum carburizing is a non-equilibrium process. It is not possible to set the carbon potential as in a traditional carburizing atmosphere and control its composition in order to obtain a desired carburized case. This paper presents test results that demonstrate that vacuum carburizing system $VacCarb^{TM}$ carburized P.M. materials faster than traditional steel with acceptable results. In the experiments conducted, PM samples with the lowest density and open porosity showed a dramatic increase in the surface carbon content up to 2.5%C and a 3 times deeper case. Currently the boost-diffusion technique is applied to control the surface carbon content and distribution in the case. In the first boost step, the flow of the carburizing gas has to be sufficient to saturate the austenite, while avoiding soot deposition and formation of massive carbides. To accomplish this goal, the proper gas flow rate has to be calculated. In the case of P.M. parts, more carbon can be absorbed by the part's surface because of the additional internal surface area created by pores present in the carburized case. This amount will depend on the density of the part, the densification grade of the surface layer and the stage of the surface. "as machined" or "as sintered". It is believed that enhanced gas diffusion after initial evacuation of the P.M. parts leads to faster carburization from within the pores, especially when pores are open . surface "as sintered" and interconnected . low density. A serious problem with vacuum carburizing is delivery of the carbon in a uniform manner to the work pieces. This led to the development of the different methods of carburizing gas circulation such as the pulse/pump method or the pulse/pause technique applied in SECO/WARWICK's $VacCarb^{TM}$ Technology. In both cases, each pressure change may deliver fresh carburizing atmosphere into the pores and leads to faster carburization from within the pores. Since today's control of vacuum carburizing is based largely on empirical results, presented experiments may lead to better understanding and improved control of the process.

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Homogeneous Shape Forming of Alumina by Pressure-Vacuum Hybrid Slip Casting (가압-진공 하이브리드 주입성형에 의한 알루미나의 균질 성형)

  • Cho, Kyeong-Sik;Song, In-Beom;Kim, Jae
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.592-600
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    • 2012
  • Conventional methods for preparing ceramic bodies, such as cold isostatic pressing, gypsum-mold slip casting, and filter pressing are not completely suitable for fabricating large and thick ceramic plates owing to disadvantages of these processes, such as the high cost of the equipment, the formation of density gradients, and differential shrinkage during drying. These problems can be avoided by employing a pressure-vacuum hybrid slip casting approach that considers not only by the compression of the aqueous slip in the casting room (pressure slip casting) but also the vacuum sucking of the dispersion medium (water) around the mold (vacuum slip casting). We prepared the alumina formed bodies by means of pressure-vacuum hybrid slip casting with stepwise pressure loading up to 0.5 MPa using a slip consisting of 40 vol% solid, 0.6 wt% APC, 1 wt% PEG, and 1 wt% PVA. After drying the green body at $30^{\circ}C$ and 80% RH, the green density of the alumina bodies was about 56% RD. The sintered density of an alumina plate created by means of sintering at $1650^{\circ}C$ for 4 h exceeded 99.8%.This method enabled us to fabricate a $110{\times}110{\times}20$ mm alumina plate without cracks and with a homogeneous density, thus demonstrating the possibility of extending the method to the fabrication of other ceramic products.

Characteristics of photo-thermal reduced Cu film using photographic flash light

  • Kim, Minha;Kim, Donguk;Hwang, Soohyun;Lee, Jaehyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.293.1-293.1
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    • 2016
  • Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

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