• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

• Horticultural Science & Technology
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• v.31 no.2
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• pp.153-158
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• 2013

This research was carried out to investigate silicon (Si) uptake levels by six potted plant species from a nutrient solution supplemented with $K_2SiO_3$. Uniform rooted plants of Dendranthema grandiflorum Ramat., Spathiphyllum patinii N.E. BR., Kalanchoe blossfeldiana, Hedera helix L., Dianthus caryophyllus L., and Euphorbia pulcherrima Willd. were grown in 350 mL boxes, one plant per box, containing a nutrient solution supplemented with either 0, 2.7, or 5.4 mM Si as $K_2SiO_3$. The nutrient solution in each container was adjusted to EC $1.5mS{\cdot}cm^{-1}$ and pH 5.6. The solution in each container was aerated by an 1 m-long polyethylene tube, all connected to a vacuum pump. After 15 days of cultivation in a glasshouse Si contents in the roots and shoots were measured using the colorimetric molybdate method and amount of remaining Si in the nutrient solution was measured using the ICP-AES to calculate the amount of absorption. A simple regression analysis was performed to observe the changes in Si contents in the roots and shoots as affected by concentration of Si supplied to the solution. Among the six species tested, carnation had the greatest and poinsettia the lowest tissue levels of Si concentration in the root, whereas carnation had the greatest and kalanchoe the lowest tissue levels of Si concentration in the shoot. Based on the Si content in the whole plant, Si uptake levels by poinsettia, kalanchoe, and chrysanthemum were low, whereas those by spathiphyllum were intermediate, and those of English ivy and carnation were high. These results indicated that the uptake level of Si by the plant vary depending on plant species.