• Proceedings of the Korean Geotechical Society Conference
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• 2008.10a
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• pp.581-590
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• 2008

A SWP method is a revolutionary dewatering method. The conventional dewatering method, deep-well method, had ever occurred a civil appeal caused by the well depletion in compliance with the reduction of the groundwater level over a wider area considerably by the deep-well pumping from homogeneous sand-layer ground for a dry-work, while pump groung excavation working in Sendai city, Japan 10 years ago. it'd developed with the problematic proposal to find the new method which can lower the groundwater level only within the sheet pile without any reduction of groundwater outside of the sheet pile and until currently steady improvement came. It's been confirmed with plenty of executional results that there was almost no decreasing of water-level from surroundings, over so many construction-sites including vertical shafts which completely does not enter into non-water permeable layer and pumping ground etc. The SWP method in this time has been introducing initially and carried into a the execution tentatively at a construction-site and made a various result get through the execution.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

• Journal of the Korean Applied Science and Technology
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• v.34 no.2
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• pp.305-314
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• 2017

The purpose of this study was to develop the high efficiency of ginseng by using microwave low temperature vacuum drying technology. In red ginseng manufacturing processes, the study results compared the hot-air drying red ginseng dried during 24hours in $60-70^{\circ}C$ and redried during 72hours in $40^{\circ}C$ after the steaming ginseng with the red ginseng dried in microwave low temperature vacuum dryer on condition that 900 watt, 2.45 MHz, 50 mmHg during 5 hours and redried during 2 hours on 750 mmHg after the steaming ginseng about observation of tissue, sensory evaluation and a change of ginsenoside and crude saponin content. As a result, the red ginseng in microwave low temperature vacuum was had high brightness, the surface turned into porosity tissue and added more flavor, decreased bitterness highly on the contrary increased sweetness at the same time that elevated the comprehensive preference. Moreover, In a short time, the content of ginsenosides $Rg_1$ and $Rb_1$ increased about sixfold, eightfold in one time zone but there were no wide difference in content of $Rg_3$ as compared to the hot-air drying red ginseng. Finally, content of crude saponin was increased widely at 10-20 minutes and stayed high crude saponin content consistently. Therefore, this result indicated that the red ginseng in microwave low temperature vacuum increased extraction yields of the ginsenosides and crude saponin through a change of porosity tissue and improved flavor and texture compare with the general hot air dried red ginseng in a short time. According to these results, that provided that could increase the preference about red ginseng.

• Journal of Life Science
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• v.18 no.9
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• pp.1271-1277
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• 2008

We investigated to determine the inhibitory effects of solvent extracts from dried onion on growth of cancer cell lines (HT-1080 human fibrosarcoma and HT-29 human colon cancer cells) and $H_{2}O_{2}$-induced oxidative stress. Two different drying methods, low temperature vacuum dryer and freeze dryer, were employed to dry onion. Inhibitory effects of acetone with methylene chloride (A+M) and methanol (MeOH) extracts from onion by two drying methods on the growth of HT-1080 and HT-29 cancer cells increased in a dose dependent manner (p<0.05) and the higher inhibitory effect was shown in onion extracts dried by low temperature vacuum dryer. The treatments of hexane, 85% aq. methanol, butanol and water fractions significantly inhibited the growth of both cancer cells (p<0.05) and onion fractions dried by freeze dryer showed a higher inhibitory effect compared with those dried by low temperature vacuum dryer. In order to determine a protective effect on H2O2-induced oxidative stress, DCHF-DA (dichlorodihydrofluorescin diacetate) assay was conducted. All fractions including crude extracts of dried onion appeared to significantly reduce the levels of intracellular reactive oxygen species (ROS) (p<0.05). Higher antioxidant effect was observed in onions dried by the low temperature vacuum dryer method. These results indicate that the low temperature vacuum dryer is useful to dry and produce onion powder.

• Food Science of Animal Resources
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• v.36 no.3
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• pp.300-308
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• 2016

In this study, the effects of grape seed flour on the physical-chemical properties, microbiological and sensory properties of Turkish dry fermented sausage, sucuk, was investigated. After the sausages produced with beef, beef fat, sheep tail fat and spices, they were ripened for 14 d. Then they were vacuum-packaged and stored for 80 d at 4℃. The effects of grape seed flour (GSF; 0%, 0.75%, 1.5%, 3%) on the physical-chemical properties (pH, moisture, fat, protein, free fatty acids, thiobarbituric acids, diameter reduction, ripening yield, instrumental colour), microbiological properties (total aerobic mesophilic and lactic acid bacteria, Enterobacteriaceae, mould and yeast) and sensory properties of the sausages were investigated. Grape seed flour decreased moisture, TBA, diameter reduction, instrumental colour (a, b) values and sensory analysis scores during the ripening period; it also decreased TBA, instrumental colour (L, a, b) values, total aerobic mesophilic and lactic acid bacteria counts during the storage period. It was concluded that grape seed flour has a potential application as an additive in dry fermented sausages.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.84.1-84.1
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• 2010

Currently, new and renewable energy come into the spotlight, such as solar energy, wind power, fuel cell, hybrid car etc., due to the energy resource is being depleted. Especially, in order to solve like this problem, the study of solar cell manufacturing systems are being extensively researched such as vacuum process. But the major fault of the vacuum process are its expensive production price. On the order hand, Roll-to-roll printing system, the new technology of solar cell manufacturing, has low production price compare with the vacuum process. Also roll-to-roll printing system can decrease the 95% of waste water and 99.9% of harmful gasses than the vacuum process. So we addressed the roll to roll printing system for the flexible solar cell by using printing technology. This roll-to-roll printing system is comprised of various modules, such as web handling module, fine pattern printing module, dry/curing module, uniform coating module and laminating module etc.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2019.11a
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• pp.27-28
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• 2019

In this study, the characteristics of compressive strength of ultra high strength concrete supplied with moisture from outside by vacuum water absorbing curing method were investigated. Specimens were prepared by replacing the binder(Silifa fume and GGBS) by 25 wt% with respect to the weight of cement at W/B 0.16. Each specimen was subjected to water Vacuum absorbing curing time 0 min, 30 min, 60 min, 90 min and 120 minutes immediately after the demolding. Curing was performed at $20^{\circ}C$ Air-dry curing, $90^{\circ}C$ steam curing, $90^{\circ}C$ steam curing and $180^{\circ}C$ autoclave curing. Experimental results showed that water absorbing degree increased with increasing water absorbing curing time, and BS25 sample had higher water absorbing degree than SF25 sample at same time. Compressive strength tended to increase up to about 40% in water absorbing degree, but compressive strength decreased again in water absorbing more than 40%.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.328-329
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• 2012

$SF_6$ gas는 반도체 및 디스플레이 제조공정 중 Dry etch과정에서 널리 사용되는 gas로 자연적으로 존재하는 것이 아닌 사용 목적에 맞춰 인위적으로 제조된 gas이다. 디스플레이 산업에서 $SF_6$ gas가 사용되는 Dry etch 공정은 주로 ${\alpha}$-Si, $Si_3N_4$ 등 Si계열의 박막을 etch하는데 사용된다. 이러한 Si 계열의 박막을 식각하기 위해서는 fluorine, Chlorine 등이 사용된다. fluorine계열의 gas로는 $SF_6$ gas가 대표적이다. 하지만 $SF_6$ gas는 대표적인 온실가스로 지구 온난화의 주범으로 주목받고 있다. 세계적으로 온실가스의 규제에 대한 움직임이 활발하고, 대한민국은 2020년까지 온실가스 감축목표를 '배출전망치(BAU)대비 30% 감축으로' 발표하였다. 따라서 디스플레이 및 반도체 공정에는 GWP (Global warming Potential)에 적용 가능한 대체 가스의 연구가 필요한 상황이다. 온실가스인 $SF_6$를 대체하기 위한 방법으로 GWP가 낮은 $C_3F_6$가스를 이용하여 $Si_3N_4$를 Dry etching 방법인 RIE (Reactive Ion Etching)공정을 한 후 배출되는 가스를 측정하였다. 4인치 P-type 웨이퍼 위에 PECVD (Plasma Enhanced Chemical Vapor Deposition)장비를 이용하여 $Si_3N_4$를 200 nm 증착하였고, Photolithography공정을 통해 Patterning을 한 후 RIE공정을 수행하였다. RIE는 Power : 300 W, Flow rate : 30 sccm, Time : 15 min, Temperature : $15^{\circ}C$, Pressure : Open과 같은 조건으로 공정을 수행하였다. 그리고 SEM (Scanning Electron Microscope)장비를 이용하여 Etching된 단면을 관찰하여 단차를 확인하였다. 또한 Etching 전후 배출가스를 포집하여 GC-MS (Gas Chromatograph-Mass Spectrophotometry)를 측정 및 비교하였다. Etching 전의 경우에는 $N_2$, $O_2$ 등의 가스가 검출되었고, $C_3F_6$ 가스를 이용해 etching 한 후의 경우에는 $C_3F_6$ 계열의 가스가 검출되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.