• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 추계 학술발표회
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• pp.581-590
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• 2008

A SWP method is a revolutionary dewatering method. The conventional dewatering method, deep-well method, had ever occurred a civil appeal caused by the well depletion in compliance with the reduction of the groundwater level over a wider area considerably by the deep-well pumping from homogeneous sand-layer ground for a dry-work, while pump groung excavation working in Sendai city, Japan 10 years ago. it'd developed with the problematic proposal to find the new method which can lower the groundwater level only within the sheet pile without any reduction of groundwater outside of the sheet pile and until currently steady improvement came. It's been confirmed with plenty of executional results that there was almost no decreasing of water-level from surroundings, over so many construction-sites including vertical shafts which completely does not enter into non-water permeable layer and pumping ground etc. The SWP method in this time has been introducing initially and carried into a the execution tentatively at a construction-site and made a various result get through the execution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

• 한국응용과학기술학회지
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• 제34권2호
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• pp.305-314
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• 2017

본 연구는 마이크로파 저온진공건조 기술을 이용하여 고효율 인삼개발을 하고자 하였다. 홍삼 제조 공정에서 증삼 후 $60-70^{\circ}C$에서 24시간 동안 건조하고 다시 $40^{\circ}C$에서 72시간동안 건조한 열풍 건조 홍삼과 증삼 후 마이크로파 저온진공건조기에서 900 watt, 2.45 MHz, 50 mmHg 조건으로 5시간동안 건조하고 다시 750 mmHg로 2시간동안 건조한 홍삼으로 조직 관찰, 관능평가, 진세노사이드 및 조사포닌 함량 변화 등을 비교하였다. 그 결과, 마이크로파 저온진공 홍삼은 색도가 밝은 색으로, 표면적은 다공성 조직으로 변화하였으며, 향미를 높이고 쓴 맛을 크게 감소시킴과 동시에 단 맛을 증가시켜 종합적인 선호도를 높였다. 또한, 단시간에 진세노사이드 $Rg_1$과 $Rb_1$ 함량을 열풍 건조 홍삼에 비해 1시간대에서 약 6배, 8배가 증가되었으나, $Rg_3$ 함량에서는 큰 차이가 나타나지 않았다. 마지막으로 조사포닌 함량은 10-20분대부터 크게 증가하여 이후 지속적으로 높은 함량이 나타났다. 이와 같은 결과를 종합해보면, 마이크로파 저온진공홍삼은 열풍 건조 홍삼에 비해 다공성 조직 변화를 통해 단시간에 진세노사이드 및 조사포닌에 대한 추출 수율을 높이고 향미와 식감을 개선시켜 홍삼에 대한 선호도를 높일 수 있음을 확인되었다.

• 생명과학회지
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• 제18권9호
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• pp.1271-1277
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• 2008

본 연구에서는 동결건조 방법과 저온 진공 건조기를 도입하여 양파를 건조한 후 유기 용매로 추출하여 인체 결장암 및 섬유육종세포에 대한 증식 억제 효과와 세포 내 활성산소종 억제 효과에 대해 비교 검토하였다. 저온 진공 건조방법으로 건조된 양파 분말의 A+M 추출물은 가장 낮은 농도인 0.5 mg/ml에서부터 농도 의존적으로 인체 섬유육종 및 결장암세포의 성장을 억제시켜 동결 건조된 양파 A+M 추출물보다 높은 증식 억제효과를 보였고(p<0.05), A+M 추출물과 비교했을 때 낮은 증식 억제효과를 나타내었으나 두 가지 건조방법에 따른 각각의 양파 MeOH 추출물도 암세포 증식 억제효과를 보였다(p<0.05). 동결건조 및 저온 진공 건조방법에 따른 양파 분획물들도 높은 암세포 증식 억제효과를 나타내었으며 그 중에서 동결 건조된 양파의 water 분획물과 hexane 분획물은 저온 진공 건조된 양파의 경우 보다 다소 높은 저해효과를 나타내었다(p<0.05). 따라서 A+M 추출물과 MeOH 추출물의 경우에는 저온 진공건조에 의해 건조된 양파 추출물에 의한 암세포 증식 억제 효과가 컸으며 분획물들의 경우에는 동결 건조된 양파 추출물의 억제 효과가 다소 높았다. 지질과산화물 생성 억제효과 실험에서는 두 가지 건조 방법에 의해 건조된 양파 분말의 A+M 및 MeOH 추출물들과 그 분획물들은 첨가농도 2.5 mg/ml에서 blank군과 control군과 비교하였을 때 측정 시간 120분 동안 계속적으로 높은 세포 내 지질 과산화물 생성 억제 능력을 나타내었다(p<0.05). 세포내 활성산소종 억제효과는 동결건조에 의해 건조된 양파보다 저온 진공 건조방법에 의해 건조된 양파 분말의 추출물과 분획물들에 의한 저해효과가 더 높았다.

• 한국축산식품학회지
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• 제36권3호
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• pp.300-308
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• 2016

In this study, the effects of grape seed flour on the physical-chemical properties, microbiological and sensory properties of Turkish dry fermented sausage, sucuk, was investigated. After the sausages produced with beef, beef fat, sheep tail fat and spices, they were ripened for 14 d. Then they were vacuum-packaged and stored for 80 d at 4℃. The effects of grape seed flour (GSF; 0%, 0.75%, 1.5%, 3%) on the physical-chemical properties (pH, moisture, fat, protein, free fatty acids, thiobarbituric acids, diameter reduction, ripening yield, instrumental colour), microbiological properties (total aerobic mesophilic and lactic acid bacteria, Enterobacteriaceae, mould and yeast) and sensory properties of the sausages were investigated. Grape seed flour decreased moisture, TBA, diameter reduction, instrumental colour (a, b) values and sensory analysis scores during the ripening period; it also decreased TBA, instrumental colour (L, a, b) values, total aerobic mesophilic and lactic acid bacteria counts during the storage period. It was concluded that grape seed flour has a potential application as an additive in dry fermented sausages.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.84.1-84.1
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• 2010

Currently, new and renewable energy come into the spotlight, such as solar energy, wind power, fuel cell, hybrid car etc., due to the energy resource is being depleted. Especially, in order to solve like this problem, the study of solar cell manufacturing systems are being extensively researched such as vacuum process. But the major fault of the vacuum process are its expensive production price. On the order hand, Roll-to-roll printing system, the new technology of solar cell manufacturing, has low production price compare with the vacuum process. Also roll-to-roll printing system can decrease the 95% of waste water and 99.9% of harmful gasses than the vacuum process. So we addressed the roll to roll printing system for the flexible solar cell by using printing technology. This roll-to-roll printing system is comprised of various modules, such as web handling module, fine pattern printing module, dry/curing module, uniform coating module and laminating module etc.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2019년도 추계 학술논문 발표대회
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• pp.27-28
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• 2019

In this study, the characteristics of compressive strength of ultra high strength concrete supplied with moisture from outside by vacuum water absorbing curing method were investigated. Specimens were prepared by replacing the binder(Silifa fume and GGBS) by 25 wt% with respect to the weight of cement at W/B 0.16. Each specimen was subjected to water Vacuum absorbing curing time 0 min, 30 min, 60 min, 90 min and 120 minutes immediately after the demolding. Curing was performed at $20^{\circ}C$ Air-dry curing, $90^{\circ}C$ steam curing, $90^{\circ}C$ steam curing and $180^{\circ}C$ autoclave curing. Experimental results showed that water absorbing degree increased with increasing water absorbing curing time, and BS25 sample had higher water absorbing degree than SF25 sample at same time. Compressive strength tended to increase up to about 40% in water absorbing degree, but compressive strength decreased again in water absorbing more than 40%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.328-329
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• 2012

$SF_6$ gas는 반도체 및 디스플레이 제조공정 중 Dry etch과정에서 널리 사용되는 gas로 자연적으로 존재하는 것이 아닌 사용 목적에 맞춰 인위적으로 제조된 gas이다. 디스플레이 산업에서 $SF_6$ gas가 사용되는 Dry etch 공정은 주로 ${\alpha}$-Si, $Si_3N_4$ 등 Si계열의 박막을 etch하는데 사용된다. 이러한 Si 계열의 박막을 식각하기 위해서는 fluorine, Chlorine 등이 사용된다. fluorine계열의 gas로는 $SF_6$ gas가 대표적이다. 하지만 $SF_6$ gas는 대표적인 온실가스로 지구 온난화의 주범으로 주목받고 있다. 세계적으로 온실가스의 규제에 대한 움직임이 활발하고, 대한민국은 2020년까지 온실가스 감축목표를 '배출전망치(BAU)대비 30% 감축으로' 발표하였다. 따라서 디스플레이 및 반도체 공정에는 GWP (Global warming Potential)에 적용 가능한 대체 가스의 연구가 필요한 상황이다. 온실가스인 $SF_6$를 대체하기 위한 방법으로 GWP가 낮은 $C_3F_6$가스를 이용하여 $Si_3N_4$를 Dry etching 방법인 RIE (Reactive Ion Etching)공정을 한 후 배출되는 가스를 측정하였다. 4인치 P-type 웨이퍼 위에 PECVD (Plasma Enhanced Chemical Vapor Deposition)장비를 이용하여 $Si_3N_4$를 200 nm 증착하였고, Photolithography공정을 통해 Patterning을 한 후 RIE공정을 수행하였다. RIE는 Power : 300 W, Flow rate : 30 sccm, Time : 15 min, Temperature : $15^{\circ}C$, Pressure : Open과 같은 조건으로 공정을 수행하였다. 그리고 SEM (Scanning Electron Microscope)장비를 이용하여 Etching된 단면을 관찰하여 단차를 확인하였다. 또한 Etching 전후 배출가스를 포집하여 GC-MS (Gas Chromatograph-Mass Spectrophotometry)를 측정 및 비교하였다. Etching 전의 경우에는 $N_2$, $O_2$ 등의 가스가 검출되었고, $C_3F_6$ 가스를 이용해 etching 한 후의 경우에는 $C_3F_6$ 계열의 가스가 검출되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.