• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.366-366
• /
• 2016

Nanoscale observation of attachment systems of animals has revealed various exquisite multiscale architectures for essential functions such as gecko's locomotion, beetles' wing fixation, octopuses' sucking and crawling. In particular, the hierarchical 3-dimensional hexanonal nano-architectures in the tree frog's adhesion is known to have the capability of the enhancement of adhesion forces on the wet or rough surfaces due to the conformal contacts against rough surfaces and water-drainable micro channels. Here, we report that tree frog-inspired patches using unique artificial 3-dimensional hexagonal structures can be exploited to form reversibly enhanced adhesion against various highly curved and rough surfaces in dry and wet condition. To investigate the adhesion effect of micro-channels, we changed the arrangement of microstructure and spacing gaps between micro-channels. In addition, we introduced the 3-dimensional hexagonal hierarchical architectures to artificial patches to enhance to conformal contacts on the various rough surfaces such as skin and organs. Using the robust adhesion properties, we demonstrated the self-drainable and comfortable skin-attachable devices which can measure EKG (electrokardiogramme) for in-vitro diagnostics. As a result, bio-inspired programmable nano-architectures can be applied in versatile devices such as, medical patches, skin-attachable electronics etc., which would shed light on future smart, directional and reversible adhesion systems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.162-162
• /
• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.149-149
• /
• 2016

Ceramic is widely known material due to its outstanding mechanical property. Besides, Zirconia(ZrO2) has a low thermal conductivity so it is advantage in a heat insulation. Because of these superior properties, ZrO2 is attracted to many fields using ultra high temperature for example vehicle engines, aerospace industry, turbine, nuclear system and so on. However brittle fracture is a disadvantage of the ZrO2. In order to overcome this problem, we can make the ceramic materials to the forms of ceramic nanoparticles, ceramic nanowhiskers and these forms can be used to an agent of composite materials. In this work, we selected Au catalyzed Vapor-Liquid-Solid mechanism to synthesize ZrO2 nanowhiskers. The ZrO2 whiskers are grown through Hot-wall Chemical Vapor Deposition(Hot wall CVD) using ZrCl4 as a powder source and Au film as a catalyst. This Hot wall CVD method is known to comparatively cost effective. The synthesis condition is a temperature of $1100^{\circ}C$, a pressure of 760torr(1atm) and carrier gas(Ar) flow of 500sccm. To observe the morphology of ZrO2 scanning electron microscopy is used and to identify the crystal structure x-ray diffraction is used.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.125.2-125.2
• /
• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.304.1-304.1
• /
• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.307.1-307.1
• /
• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.239.2-239.2
• /
• 2016

Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.215.2-215.2
• /
• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• Journal of the Korean Vacuum Society
• /
• v.10 no.3
• /
• pp.341-349
• /
• 2001

Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD(metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactant to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. From the numerical calculation, the concentration of reactants could be qualitatively predicted by the Nusselt number(heat transfer) and the optimum mass flow rate, wall tilt angle and inlet condition were considered.

• Journal of the Korean Vacuum Society
• /
• v.10 no.4
• /
• pp.440-448
• /
• 2001

The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency $f_0$ which optimizes the efficiency of operation was found as such $f_0\proptoexp(-C)$ when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.