• 한국해양공학회지
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• 제2권2호
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• pp.130-137
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• 1988

This thesis introduced that character of a treatment technique for a mading synthetic resin Hifiow-Ring. The material system of packings make an experiment air$NH_{3}$/air$H_{2}SO_{4}$, $SO_{2}$-air/NaOH, $NH_{3}$-air/$/H_{2}SO_{4}$ under general conditions. Lattices packing compared with conventional packings was proved low pressure loss and high separation efficiency for high loading per trans unit. And an inflow materal tested for absorption and rectification, it made an experiment under a range regular temperature, low energy and small amount of money. That made possible in simple equation, volume material tranfer coefficient$\beta_{L}$ . a by absorption or $\beta_{V}$ .a calculated in all range loading. The peculiarity pressure loss $\Delta\;P/NUT_{ov}$ for Hiflow-ring contributed to a fall cost of energy, a grade number of a vacuum rectification and absorption calculation.

• Current Optics and Photonics
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• 제6권1호
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• pp.69-78
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• 2022

A high-resolution camera is a precise optical system. Its vibrations during transportation and launch, together with changes in temperature and gravity field in orbit, lead to different degrees of defocus of the camera. Thermal refocusing is one of the solutions to the problems related to in-orbit defocusing, but there are few relevant thermal refocusing mathematical models for systematic analysis and research. Therefore, to further research thermal refocusing systems by using the development of a high-resolution micro-nano satellite (CX6-02) super-resolution camera as an example, we established a thermal refocusing mathematical model based on the thermal elasticity theory on the basis of the secondary mirror position. The detailed design of the thermal refocusing system was carried out under the guidance of the mathematical model. Through optical-mechanical-thermal integration analysis and Zernike polynomial calculation, we found that the data error obtained was about 1%, and deformation in the secondary mirror surface conformed to the optical index, indicating the accuracy and reliability of the thermal refocusing mathematical model. In the final ground test, the thermal vacuum experimental verification data and in-orbit imaging results showed that the thermal refocusing system is consistent with the experimental data, and the performance is stable, which provides theoretical and technical support for the future development of a thermal refocusing space camera.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.144.2-144.2
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• 2016

Diamond-like carbon (DLC) coatings have been widely applied to the mechanical components, cutting tools due to properties of high hardness and wear resistance. Among them, hydrogenated amorphous carbon (a-C:H) coatings are well-known for their low friction properties, stable production of thin and thick film, they were reported to be easily worn away under high temperature. Non-hydrogenated tetrahedral amorphous carbon (ta-C) is an ideal for industrial applicability due to good thermal stability from high $sp^3$-bonding fraction ranging from 70 to 80 %. However, the large compressive stress of ta-C coating limits to apply thick ta-C coating. In this study, the thick ta-C coating was deposited onto Inconel alloy disk by the FCVA technique. The thickness of the ta-C coating was about $3.5{\mu}m$. The tribological behaviors of ta-C coated disks sliding against $Si_3N_4$ balls were examined under elevated temperature divided into 23, 100, 200 and $300^{\circ}C$. The range of temperature was setting up until peel off observed. The experimental results showed that the friction coefficient was decreased from 0.14 to 0.05 with increasing temperature up to $200^{\circ}C$. At $300^{\circ}C$, the friction coefficient was dramatically increased over 5,000 cycles and then delaminated. These phenomenon was summarized two kinds of reasons: (1) Thermal degradation and (2) graphitization of ta-C coating. At first, the reason of thermal degradation was demonstrated by wear rate calculation. The wear rate of ta-C coatings showed an increasing trend with elevated temperature. For investigation of relationship between hardness and graphitization, thick ta-C coatings(2, 3 and $5{\mu}m$) were additionally deposited. As the thickness of ta-C coating was increased, hardness decreased from 58 to 49 GPa, which means that graphitization was accelerated. Therefore, now we are trying to increase $sp^3$ fraction of ta-C coating and control the coating parameters for thermal stability of thick ta-C at high temperatures.

• 한국진공학회지
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• 제8권2호
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• pp.102-110
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• 1999

The LIGA X-ray exposure step was modelled into three inequalities, by assuming that the X-ray energy attenuated within a resist is deposited only in the localized range of the resist. From these inequalities, equations for the minimum and maximum exposure times required for a good quality microstructure were obtained. Also, an equation for the thickness of an X-ray mask absorber was obtained from the exposure requirement of threshold dose deposition. The calculation method of the synchrotron radiation power from a synchrotron radiation source was introduced and applied to an X-ray exposure step. A power from a synchrotron radiation source was introduced and applied to an X-ray exposure step/ A power function of photon energy, approximating the attenuation length of the representative LIGA resist, PMMA, and the mean photon energy of the XZ-rays incident upon an X-ray mask absorber were applied to the above mentioned equations. Consequently, the tendencies of the minimum and maximum exposure and with respect to mean photon energy and thick ness of PMMA was obtained. Additionally, the tendencies of the necessary thickness of PMMA and photon energy of the X-ray mask absorber with respect to thickness of PMMA and photon energy of the X-rays incident upon an X-ray mask absorber were examined. The minimum exposure time increases monotonically with increasing mean photon energy for the same total power density and is not a function of the thickness of resist. The minimum exposure time increases with increasing mean photon energy for the same total power density in the case of the general LIGA process, where the thickness of PMMA is thinner than the attenuation length of PMMA. Additionally, the minimum exposure time increases monotonically with increasing thickness of PMMA. The maximally exposable thickness of resist is proportional to the attenuation length of the resist at the mean photon energy with its proportional constant of ln $(Dd_m/D_{dv})$. The necessary thickness of a gold X-ray mask absorber due to absorption edges of gold, increases smoothly with increasing PMMA thickness ratio, and is independent of the total power density itself. The simplicity of the derived equations has made clearly understandable the X-ray exposure phenomenon and the correlation among the exposure times, the attenuation coefficient and the thickness of an X-ray mask absorber, the attenuation coefficient and the thickness of the resist, and the synchrotron radiation power density.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• 한국진공학회지
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• 제17권5호
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• pp.387-393
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• 2008

제일원리계산 방법을 이용하여 Ag/Si(111)$\sqrt{3}{\times}\sqrt{3}$(이후로 $\sqrt{3}-Ag$로 표시) 표면에 은 원자가 추가로 흡착된 표면의 원자구조와 에너지를 조사하였다. 은의 덮임율을 0.02 ML에서 0.14 ML로 변화시켜가며 구조변화를 살펴보았다. 흡착된 은 원자들은 대부분 $\sqrt{3}-Ag$ 표면의 은 원자층의 작은 삼각형(ST)의 중간에 자리 잡았다. 특이한 것은 은 원자들은 은 원자층 보다 아래로 내려간다는 것이다. 은 흡착원자(adatom)의 덮임율이 증가함에 따라 adatom들은 클러스터를 만들려는 경향을 보였다. 은 흡착원자들이 모인 클러스터의 에너지를 계산해 보면 흡착원자가 세 개일 때 가장 안정됨을 알 수 있었다. 이 삼원자 클러스터를 구성 단위로 하여 $\sqrt{21}{\times}\sqrt{21}$ 구조의 원자구조를 결정할 수 있었다. 각 덮임율에서 가장 에너지가 낮은 구조들에 대한 STM 영상을 시뮬레이션 해 보면 은 원자는 찬 상태에서 어둡게 보였다. 이는 은 원자가 기판으로 전하를 제공해 줌을 의미한다. 그리고 원자층의 구조변화가 STM 실험에서 보이는 미세한 특성까지도 잘 설명하였다.

• 한국진공학회지
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• 제20권2호
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• pp.100-105
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• 2011

이온을 Si(100) 기판에 주입할 때 조사량과 에너지, 빔 전류가 면저항에 영향을 미치는 원인을 규명하기 위해 여러 연구자가 행하였던 실험과 동일한 조건으로 Crystal TRIM 프로그램을 이용하여 컴퓨터 시뮬레이션을 실행하였다. 주입한 $As^+$이온의 조사량을 $1{\times}10^{15}/cm^2$로 일정하게 하고 에너지를 5, 10, 15 keV로 변화시켜 계산한 결과 에너지가 커질수록 Rp값은 표면에서 깊어지는 반면에, 표면근방에 축적되는 격자손상은 증가하였다. 20keV의 B+이온을 $5{\times}10^{15}/cm^2$의 동일한 조사량으로 1mA와 7 mA의 빔 전류에 해당하는 값을 이용하여 계산한 결과 빔 전류가 커질수록 표면근방 100 nm 이내에서 격자손상이 증가하였다. 20 keV의 일정한 에너지로 B+이온을 $1{\times}10^{15}$, $3{\times}10^{15}/cm^2$ 조사량과 0.8 mA와 8 mA의 빔 전류로 각각 계산한 결과 조사량이 많아질수록, 빔 전류가 커질수록 표면 근방에 축적되는 격자손상의 양이 증가하였다. 이러한 에너지, 조사량과 빔 전류증가에 의한 시료표면의 격자손상 증가는 시료표면의 면저항을 감소시킨다.

• 한국진공학회지
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• 제18권1호
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• pp.9-14
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• 2009

본 연구는 정방정계-$HfO_2$/Si 초격자의 계면 층 구조를 범밀도함수론 (density functional theory)을 이용하여 계산하였다. 입방정계-$HfO_2$는 Si 기판과 에피택시 접합을 위하여 a와 b축의 길이가 증가되면 c축의 길이가 2% 감소하여 정방정계 구조가 되었다. 정방정계-$HfO_2$와 Si 기판의 말단층에 따라서 8 개의 계면 층 모델이 생성되었다. 정방정계-$HfO_2$ (004)$_{1/4}$/Si $(004)_{3/4}$ 초격자구조가 에너지 관점에서 가장 안정하였고, 정방정계-$HfO_2$ $(004)_{1/4}$/Si (002) 초격자구조는 가장 불안정하였다. 에너지 관점에서 가장 불안정한 구조의 경우, 정방정계-$HfO_2$의 계면에 존재하는 2 개의 산소 원자가 Si 기판으로 이동하여 정방정계-$HfO_2$ 초격자구조에 2 개의 산소 공공이 생성되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.