• Title/Summary/Keyword: Vacuum Switch

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Parameter Study of Impact Characteristics for a Vacuum Interrupter Considering Dynamic Material Properties (동적 물성치를 고려한 진공 인터럽터 충격특성의 영향인자 분석)

  • Lim, Ji-Ho;Song, Jeong-Han;Huh, Hoon;Park, Woo-Jin;Oh, Il-Seong;Ahn, Gil-Young;Choe, Jong-Woong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.5
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    • pp.924-931
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    • 2002
  • Vacuum interrupters in order to be used in various switch-gear components such as circuit breakers, distribution switches, contactors, etc. spread the arc uniformly over the surface of the contacts. The electrodes of vacuum interrupters are made of sinter-forged Cu-Cr materials for good electrical and mechanical characteristics. Since the closing velocity is 1-2m/s and impact deformation of the electrode depends on the strain rate at that velocity, the dynamic behavior of the sinter-forged Cu-Cr is a key to investigate the impact characteristics of the electrodes. The dynamic response of the material at the high strain rate is obtained from the split Hopkinson pressure bar test using disc-type specimens. Experimental results from both quasi-static and dynamic compressive tests are Interpolated to construct the Johnson-Cook model as the constitutive relation that should be applied to simulation of the dynamic behavior of the electrodes. The impact characteristics of a vacuum interrupter are investigated with computer simulations by changing the value of five parameters such as the initial velocity of a movable electrode, the added mass of a movable electrode, the wipe spring constant, initial offset of a wipe spring and the virtual fixed spring constant.

Design and Operation Characteristics of 2.4MJ Pulse Power System for Electrothermal-Chemical (ETC) Propulsion (II) (전열화학추진용 2.4MJ 펄스파워전원의 설계와 동작특성(II))

  • Jin, Y.S.;Lee, H.S.;Kim, J.S.;Whang, D.W.;Kim, J.S.;Chu, J.H.;Jung, J.W.;Moon, H.J.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1603-1605
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    • 2001
  • Eight 300kJ modularized capacitor-banks have been constructed. These modules have been installed and assembled to make a 2.4MJ pulse power system (PPS). This 2.4MJ PPS was developed to be used as a driver of an electrothermal-chemical (ETC) gun. Each capacitor bank has six 22kV, 50kJ capacitors connected in parallel. A triggered vacuum switch (TVS-43) was adopted as a main pulse power-closing switch in each module. The module also contains a crowbar circuit made of three high-voltage diode-stacks, a multi-tap inductor and an energy-dumping resistor. Various current shapes have been formed by a sequential firing of multiple capacitor banks. Resistive dummy load has been used and various combinations of experimental parameters, such as charging voltage, trigger time and inductance, were tested to make flexible current shapes.

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Dynamic Material Property of the Sinter-Forged Cu-Cr Alloys with the Variation of Chrome Content (구리-크롬 소결단조 합금의 크롬 함유량 변화에 따른 동적 물성특성)

  • Song Jung-Han;Huh Hoon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.6 s.249
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    • pp.670-677
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    • 2006
  • Vacuum interrupters are used in various switch-gear components such as circuit breakers, distribution switches, contactors. The electrodes of a vacuum interrupter are manufactured of sinter-forged Cu-Cr material for good electrical and mechanical characteristics. Since the closing velocity is 1-2m/s and impact deformation of the electrode depends on the strain-rate at the given velocity, the dynamic material property of the sinter-forged Cu-Cr alloy is important to design the vacuum interrupter reliably and to identify the impact characteristics of a vacuum interrupter accurately. This paper is concerned with the dynamic material properties of sinter-forged Cu-Cr alloy for various strain rates. The amount of chrome is varied from 10 wt% to 30 wt% in order to investigate the influence of the chrome content on the dynamic material property. The high speed tensile test machine is utilized in order to identify the dynamic property of the Cu-Cr alloy at the intermediate strain-rate and the split Hopkinson pressure bar is used at the high strain-rate. Experimental results from both the quasi-static and the high strain-rate up to the 5000/sec are interpolated with respect to the amount of chrome in order to construct the Johnson-Cook and the modified Johnson-Cook model as the constitutive relation that should be applied to numerical simulation of the impact behavior of electrodes.

Microwave-Vacuum Drying of Short Roundwoods and Wood Turneries (단척 통나무와 선반가공목의 마이크로웨이브-진공 건조)

  • Kang, Ho-Yang
    • Journal of the Korean Wood Science and Technology
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    • v.29 no.4
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    • pp.25-32
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    • 2001
  • A microwave vacuum (MW/V) dryer was developed for drying short roundwoods, from which woodcraft souvenirs in Korean market are mostly made, and which were hardly dried without defects in a conventional kiln. It consisted of three 1.5 kW magnetrons of 2,450 MHz, a vacuum pump, a load cell of 100 kg and a cavity of $580{\times}580{\times}1,360\;mm^3$. A computer program was developed to switch on or off the magnetrons according to drying schedules, those were based on microwave injection time or the average of wood temperatures. To evaluate the new MW/V dryer the roundwood specimens of rigida pine, poplar and birch were dried. Their log diameters and lengths ranged from 125 to 25 em and from 25 to 50 cm, respectively. In spite of the presence of minor drying defects, the MW/V drying is found to be an effective method for drying short roundwoods. Wooden turneries made of red alder and ash logs were also MW/V dried from green to 4%MC without any degradation. The rates of the MW/V drying were examined for three different lengths of poplar logs.

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Development of the Controlled Switching Device for a Cirrcuit Breaker

  • Kim, Ik-Mo;Kim, Myung-Chan;Choi, Young-Chan;Ryu, Sung-Sic;Kim, Dong-Hyun
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.558-560
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    • 2004
  • Studies on the controlled switching method have been done to prevent the power system surges which cause the insulation deterioration and electro magnetic compatibility (EMC) problems during closing and opening of a circuit breaker. The controlled switching method controls the closing and tripping time in coincidence with the voltage or current to suppress switching surge. It is used to switch condenser bank, no load transformer, and shunt reactor. In this study, basic concept of the controlled switching is introduced, and also the test is performed to find parameters of the controlled switching in a 24kV vacuum circuit. And then, the control device hardware using TMS320C31 DSP has been designed and manufactured. It has been found that the application of IT technology to a circuit breaker is very effective to depress the switching surge.

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External Electrode Fluorescent Lamp Backlight Driven by Square Pulses (외부전극 형광램프 백라이트의 구형파 구동)

  • 김영미;권남옥;김성중;조광섭;김봉수;천장호;강준길;이응원;양순철
    • Journal of the Korean Vacuum Society
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    • v.12 no.1
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    • pp.46-50
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    • 2003
  • Characteristic properties of backlight arraying external electrode fluorescent lamps has been investigated indriving with a square wave from switch inverters. In the backlight of 17 inch-diagonal with 12 lamps, the efficiency of 65-70 1m/W with the luminance of 5,000-10,000 cd/$\textrm m^2$ has been achieved in the frequency range 40-80 kHz where the higher frequency provides the lower operating voltage in the range 1.0-2.0 kV. In the frequency above 80 kHz, a stable and an uniform luminance in the backlight panel can not be achieved.

Energetics of adsorptions on fcc(111) and binary system; An application of the modified embedded atom method

  • Hy. Shin;J. Seo;Kim, J.S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.188-188
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    • 1999
  • The embedded atom method (EAM) of Daw and Baskes as a semiempirical method, has been successfully applied to the fcc or nearly filled d-band transition metals due to its computational feasibility and its methodological simplicity. Then Baskes modified the EAM (MEAM) to include directional bonding and applied it to metals, semiconductors, and diatomic gases, all of which have different types of bondings. Here, we present a detailed study of the energetics of adsorption on the fcc(111) surfaces and binary system within the framework of MEAM. In adsorption on fcc(111) surfaces, there are two energetically favored sites, so called, fcc site and hcp site, which may trigger stacking fault in the growth of films and might switch growth mode between 3D growth and layer by layer growth. We scrutinized the role of the hcp sites, which would offer dynamic growth pathways although the dynamics are not yet clear within the limited experimental resolution. Featuring these transient motions in the atomic level should contribute to the understanding the growth mechanisms on fcc(111) surface. And we also applied MEAM for initial stage energetics at the Cr coverage of sub- monolayer on W(110). We hope that recently observed extraordinary growth behavior at the Cr coverage of 0.7 monolayer, self- organized nano-scale lines, can be resolved in this MEAM binary system calculation.

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Bi-directional Two Terminal Switching Device with Metal/P/N+or Metal/N/P+ Junction

  • Kil, Gyu-Hyun;Lee, Sung-Hyun;Yang, Hyung-Jun;Lee, Jung-Min;Song, Yun-Heub
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.386-386
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    • 2012
  • We studied a bilateral switching device for spin transfer torque (STT-MRAM) based on 3D device simulation. Metal/P/N+or Metal/N/P+ junction device with $30{\times}30nm2$ area which is composed of one side schottky junction at Metal/P/N+ and Metal/N/P+ provides sufficient bidirectional current flow to write data by a drain induced barrier lowering (DIBL). In this work, Junction device confirmed that write current is more than 30 uA at 2 V, It is also has high on-off ratio over 105 under read operation. Junction device has good process feasibility because metal material of junction device could have been replaced by bottom layer of MTJ. Therefore, additional process to fabricate two outer terminals is not need. so, it provides simple fabrication procedures. it is expected that Metal/P/N+ or Metal/N/P+ structure with one side schottky junction will be a promising switch device for beyond 30 nm STT-MRAM.

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Research trend of programmable metalization cell (PMC) memory device (고체 전해질 메모리 소자의 연구 동향)

  • Park, Young-Sam;Lee, Seung-Yun;Yoon, Sung-Min;Jung, Soon-Won;Yu, Byoung-Gon
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.253-261
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    • 2008
  • Programmable metallizaton cell (PMC) memory device has been known as one of the next generation non-volatile memory devices, because it includes non-volatility, high speed and high ON/OFF resistance ratio. This paper reviews the operation principle of the device. Besides, the recent research results of professor Kozicki who firstly invented the device and investigated it for the memory applications, NEC corporation which studied it for the FPGA (field programmable gate array) switch applications, ETRI and chungnam national university which examined Te-based devices are introduced.

A Study on the preparation of optimum piezoelectric organic thin films of PVD method and switch characteristic (진공증착법을 이용한 최적의 압전성 유기박막의 제조와 스위치 특성에 관한 연구)

  • 박수홍;이선우;이희규
    • Journal of the Korean Vacuum Society
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    • v.8 no.3A
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    • pp.194-200
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    • 1999
  • In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

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