• Proceedings of the KSME Conference
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• 2004.11a
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• pp.447-452
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• 2004

Vacuum interrupters in order to be used in various switch-gear components such as circuit breakers, distribution switches, contactors, etc. spread the arc uniformly over the surface of the contacts. The electrodes of vacuum interrupters are made of sinter-forged Cu-Cr materials for good electrical and mechanical characteristics. Since the closing velocity is 1-2m/s and impact deformation of the electrode depends on the strain rate at that velocity, the dynamic behavior of the sinter-forged Cu-Cr is a key to investigate the impact characteristics of the electrodes. The dynamic response of the material at intermediate strain rate is obtained from the high speed tensile test machine test and at the high strain rate is obtained from the split Hopkinson pressure bar test. Experimental results from both quasi-static and dynamic compressive tests are interpolated to construct the Johnson-Cook model as the constitutive relation that should be applied to simulation of the dynamic behavior of the electrodes. The impact characteristics of a vacuum interrupter are investigated with computer simulations by changing the amount of chromium content.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.34-39
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• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

• Journal of IKEEE
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• v.16 no.3
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• pp.217-223
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• 2012

This paper presents design and operational characteristics of 150 MW pulse power system for high current pulse forming network to control trigger time. The system is composed of two capacitor bank modules. Each capacitor bank module consist of a trigger vacuum switch, 9k 33kJ capacitor, an energy dump circuit, a crowbar circuit and a pulse shaping inductor and is connected in parallel. It is controlled by trigger controller to select operational module and determine triggering time. Pspice simulation was conducted about determining parameters of components such as crowbar circuit, capacitor, pulse forming inductor, trigger vacuum switch and predicting results of experiment circuit. The result of the experiment was in good agreement with the result of the simulation. The various current shapes with 300~650 us pulse width is formed by sequential firing time control of capacitor bank module. The maximum current is about 40 kA during simultaneous triggering of two capacitor bank modules. The developed 150 MW pulse power system can be applied to high current pulse power system such as rock fragmentation power sources, Rail gun, Coil gun, nano-powers, high power microwave.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.214-215
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• 2000

레이저로 발생시킨 플라즈마의 분광학적인 분석은 유용한 분석기술로 평가되고 있다. 이러한 플라즈마를 발생시키는데 있어서 Q-switched 레이저를 많이 사용되고 되고 있으나, Q-switch된 레이저로 발생시킨 플라즈마 복사광의 특성은 주변 분위기에 의해 매우 큰 영향을 받는다. 특히 대기압인 공기분위기에서 레이저로 발생된 플라즈마의 분광특성은 강하고 연속적인 background가 포함되고, 자체적으로 흡수되고, 넓게 퍼진 분광선들이 생성된다. 이는 레이저 발생 플라즈마를 통해 성분을 분석할 경우에 적합하지 않다. (중략)

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1868-1870
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• 2002

최근 고전압/대전류 펄스파워응용이 점차 늘어나고 있다. 정전형 고전압/대전류용 펄스파워전원장치의 핵심인 폐스위치의 수요 또한 점차 증가 할 것으로 추정된다. 펄스파워전원장치의 안정적이고 신뢰성 있는 동작을 위해서는 주위 조건에 영향을 받지 않는 진공 스위치가 적합하다. 진공펌프, 챔버없이 사용이 간편하도록 sealed-off화되어야 한다. 본 논문에서는 챔버내에서 동작이 확인된 회전 아크형 진공 스위치를 유지전압 22[kV]. 첨두전류 150[kAp]의 사양으로 스위치를 sealed off 제작 및 이를 동작 시험한 결과에 대해 기술하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.13-13
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• 2011

Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.433-433
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• 2010

A microplasma current switch (MPCS) for a device operated in a current mode like organic light-emitting diodes (OLEDs), which features matrix addressability and current switching, is presented as well as its architecture and operational principle. The MPCS utilizes the intrinsic memory and conductivity of plasmas to achieve matrix addressability and current switching. We have fabricated a $100\;mm\;{\times}\;100\;mm$ MPCS panel in which its cell pitch is $1080\;{\mu}m\;{\times}\;1080\;{\mu}m$. The matrix addressability and current switching were verified. In addition, the current-voltage (I-V) characteristic of the unit cell was measured when plasmas were ignited. In principle, the scheme of the MPCS is equivalent to that of a double Langmuir probe diagnosing plasma parameters except for their relative dimensions to a plasma volume. Accordingly, the I-V characteristic was analyzed by a double Langmuir probe theory, and the plasma density and electron temperature were estimated from the I-V curve using a collisional double Langmuir probe theory.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.157.1-157.1
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• 2013

외부 Ballast Capacitor를 이용한 Voltage Doubler 전원장치를 이용하여 Micro size의 대기압 플라즈마를 발생장치를 개발하였다. 2개의 외부 Capacitor를 병렬로 연결하여 충전한 다음 외부 Capacitor를 직렬로 연결하여 전압을 2배압 시킨 상태에서 방전이 일어나도록 하였다. Capacitor의 충 방전 제어는 Switch Device인 Insulated Gate Bipolar Transistor (IGBT)를 사용하였다. 개발된 대기압 플라즈마는 외부 Capacitor와 인가전압을 독립적으로 변화시킬 수 있기 때문에 방전 시 전류 전압을 독립적으로 제어할 수 있으며 용도에 따라 Glow 방전에서 Arc 방전까지 제어가 가능하다. 본 연구에서는 900 V의 1.22 nF 외부 Capacitor 방전과 400 V의 10 nF 외부 Capacitor 방전을 비교하였다. 방전 시 전압파형과 전류파형은 서로 다르지만 소비된 방전에너지는 340 ${\mu}J$로 동일하다. ICCD camera와 Spectrometer를 이용하여 비교 분석을 실시하였다. 방전 image 및 Optical Emission Spectroscopy 분석을 이용하여 플라즈마의 온도, 밀도 등을 시간적, 공간적으로 분석하였다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.4
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• pp.87-95
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• 1999

A primary limitation of the awlication of New class of solid state high power, high speed electronic device, narrely, the Photo-Conductive Power Switch(PCPS) is that the switches flashover at the surlace under average awlied fields much less than the bulk breakdown field of the semiconductor in most cases. The only way overcome those problffi1 and has a workable compact solid state switch is to passivate the surlace by a solid state dielectric material. In this experirrentation, The voltage withstands of Silicon is to be severely degraded when operated in vacuum(10[kV/cm]) and the perlormance is improved when operated in air(30[kV/cm[), in SF6(80~100[kV/cm]). After the passivation, the device had a breakdown field in vacuum and air at a field as high as the unpassivated device in SF6. A experirrent results show passivated devices have excellent breakdown field. In this paper, We improved the main properties and mechanism of the silicon breakdown before and after passivation under high field. field.