• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.57-65
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• 2003

In this study, we carry out reliability tests and investigate the failure mechanisms of the anodically bonded wafer level vacuum packaging (WLVP) MEMS gyroscope sensor. There are three failure mechanisms of WLVP: leakage, permeation and out-gassing. The leakage is caused by small dimension of the leak channel through the bonding interface and internal defects. The larger bonding width and the use of single crystalline silicon can reduce the leak rate. Silicon and glass wafer itself generates a large amount of outgassing including $H_2O$, $C_3H_5$, $CO_2$, and organic gases. Epi-poly wafer generates 10 times larger amount of outgassing than SOI wafer. The sandblasting process in the glass increases outgassing substantially. Outgassing can be minimized by pre-baking of the wafer in the vacuum oven before bonding process. An optimum pre-baking temperature of the wafers would be between $400^{\circ}C$ and $500^{\circ}C$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.110-110
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• 2000

Cantilever-shaped lateral field emitters were fabricated and their electrical characteristics were tested. As shown in Fig.1, poly-silicon cantilevers were fabricated by the surface micromachining and they were used to the vacuum magnetic field sensors. The tunneling devices were vacuum sealed with the tubeless packaging method, as shown in Fig.2 and Fig.3. The soda-lime glasses were used for better encapsulation, so the sputtered silicon and the glass layers on the soda-lime glasses were bonded together at 1x10$^{-6}$ Torr. The getter was activated after the vacuum sealing fur the stable emissions. The devices were tested outside of the vacuum chamber. Through vacuum packaging, the tunneling sensors can be utilized. Fig.4 shows that the sensor operates with the switching of the magnetic field. When the magnetic field was applied to the device, the anode currents were varied by the Lorentz force. The difference of anode currents can be varied with the strength of the applied magnetic field.

• Elastomers and Composites
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• v.50 no.1
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• pp.55-61
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• 2015

Manufacturing process of OLED contains adsorption-desorption process of glass substrate. There are several adsorption methods of glass substrate such as atmospheric pressure, vacuum and electrostatic adsorption. However, these methods are very complex to connect system. Therefore, the adsorption method using silicone rubber based sticking chuck was proposed in this study. Three types of silicone rubbers having 0, 19.3 and 32.2 wt% of fluorine were used and their mechanical properties, surface energies and adsorption properties were examined. According to the results ${\sigma}_{300}$ and hardness increased with increasing fluorine contents, but elongation was decreased. Also, fluorosilicone rubber containing 32.2 wt% of fluorine showed the lowest surface tension, among three types of rubber and resulted in the highest initial tack with glass substrate. After the adsorption-desorption test of 300,000 cycles was performed, the adsorption force of S-1 (silicone rubber) decreased largely from 2.34 to 0.73 MPa. However, the S-3 (fluorosilicone rubber having 32.2 wt%. of fluorine) decreased only from 3.15 to 2.24 MPa. From this study, we obtained the valuable equations related to long term durability of silicone based sticking chuck. Finally the transfer of silicone rubber to glass substrate with the adsorption-desorption process was not occurred and this phenomenon was examined by UV-Visible spectroscopy.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.546-551
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• 2021

To improve ferroelectric properties of PZT, many studies have attempted to fabricate dense PZT films. The AD process has an advantage for forming dense ceramic films at room temperature without any additional heat treatment in low vacuum. Thick films coated by AD have a higher dielectric breakdown strength due to their higher density than those coated using conventional methods. To improve the breakdown strength, glass (SiO₂-Al₂O₃-Y₂O₃, SAY) is mixed with PZT powder at various volume ratios (PZT-xSAY, x = 0, 5, 10 vol%) and coating films are produced on silicon wafers by AD method. Depending on the ratio of PZT to glass, dielectric breakdown strength and energy storage efficiency characteristics change. Mechanical impact in the AD process makes the SAY glass more viscous and fills the film densely. Compared to pure PZT film, PZT-SAY film shows an 87.5 % increase in breakdown strength and a 35.3 % increase in energy storage efficiency.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.792-794
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• 1998

The TPD and the $Alq_3$ film are widely used as a hole transport layer and an emitter layer respectively, in organic electroluminescent(EL) device (ITO Glass/TPD/$Alq_3$/metal). In this structure, we fabricated two models. Model(1) having ITO glass/$Alq_3$/Al structure and model(2) having ITO Glass/TPD/$Alq_3$/Al structure were fabricated by the vacuum evaporation. The comparison between model(1) and model(2) was made about the absorbance, the wave length, the current-voltage characteristic and the ln I - $V^{(1/2)}$characteristic respectively. Electroluminescence of green and wavelength of 510[nm] were observed in both model. We observed absorbance from 320[nm] to 430[nm] in $Alq_3$ material and from 250[nm] to 400[nm] in TPD material.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1542-1547
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• 2003

This paper represents the solar collector performance with type of an evacuate double glass, and a copper tube was installed in center of collector to get a solar thermal energy. The one module of solar collector and artificial sun were used in this experiment The distance between artificial sun and solar collector was fixed at 0.5m, and this experimental condition was focused on winter season. The experiments were carried out. three times for getting a accurate data and the heat amount of one module evacuate d solar collector was estimated at out. 48 kcal/hr.

• Journal of the Korean Solar Energy Society
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• v.22 no.1
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• pp.43-53
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• 2002

This study has been carried out to study the thermal performance of an all-glass type solar collector tube when a heat transfer medium is used with a heat storage unit capable of preventing pressure build-up within the tube. The heat storage unit is devised such that it performs the dual function of relieving excessive pressure and storing solar thermal energy. Different types of heat storage medium are tested under heat-up phase of a collector tube. It is found that the proposed unit could be used quite effectively if one wishes to capitalize more aggressively in harnessing the solar energy.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.233-241
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• 2011

Currently, solar module is using the two methods such as a glass-filled method or a super-straight method. The common point of these methods is to use glass structure on the front of solar module. However, the reflectance of the solar module is high depending on the height of the incident sunlight due to the flat surface of the module front glass. Purposed to solve these problems, AG (anti-glare) structures were formed on the glass surface. Next is fabrication methods of AG structure. First, uneven structure made by micro blaster equipment was dipped in Hydro-fluidic acid (HF) acid. HF acid process was carried out to remove particles and to make high transmittance. The reflectance and transmittance of the anti-glare glass was compared to those of the bare glass. The reflectance of anti-glare glass decreased approximately 1% compared with bare glass. The transmittance of anti-glare glass was similar to bare glass. According to the sample angle, the difference of the reflectance between bare glass and the anti-glare glass was about 19%. Isc and efficiency value of anti-glare glass on bare solar cell appeared about 3.01 mA and 0.228% difference compared with bare glass. Anti-glare glass on textured solar cell appeared about 9.46 mA and 0.741% difference compared with bare glass. As a result, the role of anti-glare in the substrate is to reduces the loss of sunlight reflected from the surface. In this study, therefore, AG structure on the solar cell was used to improve the efficiency of solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.267-267
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• 2009

Solar cells with CIGS absorber layers have proven their suitability for high efficiency and stable low cost solar cells. We prepared and characterized particle based CIGS thin film using a non-vacuum processing. CIGS powder were obtained at $240^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$, Se powder in solvent. The nanoparticle precursors were mixed with binder material. The CIGS thin film deposited on a sodalime glass. The CIGS thin film were identified to have a typical chalcopyrite tetragonal structure by using UV/Visible-spectroscopy, X-ray diffraction(XRD), Auger Electron Spectroscopy(AES), Scanning Electron Microscopy(SEM).