• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.92.1-92.1
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• 2017

고경도 질화막 합성과 밀착력 향상을 위한 기판 청정 기술은 밀접한 상관관계가 있다. 음극 진공 아크 증발원을 이용하여 기판 청정을 실시하였으며, 기판 전압이 증가함에 따라 기판 청정 효과가 증가하였으나, 그 역효과 또한 확인할 수 있었다. 특히 기판 전압 인가부의 전극 접촉부 위치에 따라 청정 형상이 크게 영향을 받음을 확인하였다. 기판 청정 후 고경도 질화막을 형성시켜 100N 이상의 밀착력 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.19 no.2
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• pp.51-58
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• 1986

A theoretical model was proposed to predict the rate of particles impinging on the negatively biased substrate and the total kinetic energy per unit time. The model takes into an account of kinetic theory based on Maxwell statistics and elementary plasma theory, incorporated with Hertz-Knudsen's evaporation theory. It is found that as the bias potential increases the ion flux and kinetic energy increases to a value above which the effect of potential is insignificant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.439-442
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• 1998

In this paper, organic thin film LED(light emitting diode) having ITO glass/Alq$_3$/Al structure using an Alq$_3$ was fabricated by the vacuum evaporation and the absorbance, wave length, I-V characteristics were investigated, Electroluminescence of green and wavelength of 510[nm] were observed in this device. We observed absorbance form 320[nm] to 430[nm] and knew unstability of Alq$_3$ material as light emitting device.

• 전기의세계
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• v.31 no.3
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• pp.218-225
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• 1982

Metal-Oxide-Metal thin film diodes have been fabricated on the glass substrates by conventional vacuum evaporation method, and the electrical properties, primarily current-voltage characteristics of diodes, have been discussed in the light of various conduction theories presented so far. The experimental results were ploted in the different figures according to the assumed theory, and the characteristic coefficients peculior to these theories were estimated from the function dependence of current (I) upon voltage (V), temperature (T) and oxide film thickness (d).

• 전기의세계
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• v.29 no.2
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• pp.111-117
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• 1980

Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1995.11a
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• pp.9-9
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• 1995

MATERIAL AND PROCESS VARIABLES THAT STRONGLY AFFECT THE CORROSION RESISTANCE OF PA4 STAINLESS STEELS, INCLUDE : ALLOY COMPOSITION, POWDER CLEANLINESS, NITROGEN, OXYGEN AND GARBON CONTENTS, CHROMIUM DEPLETION DUE TO SURFACE EVAPORATION AND SINTERED DENSITY. THE OPTIMUM PROCESS PARAMETERS FOR DELUBRICATION AND SINTERING THAT RESULT IN LOWEST LEVELS OF NITROGEN, OXYGEN AND CARBON AND MINIMUM LEVELS OF CHROMIUM DEPLETION WILL BE PRESENTED, FOR A NUMBER OF AUSTENTIC AND FERRITIC STAINLESS STEELS. THE EFFECT OF SINTERED DENSITY ON THE CORROSION RESISTANCE OF BOTH AUSTENITIC AND FERRITIC GRADES OF STAINLESS STEEL WILL ALSO BE COVERED.

• Proceedings of the Membrane Society of Korea Conference
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• 1996.03a
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• pp.1-23
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• 1996

투과증발(Pervaporation)이란 어원적으로 "permeation"과 "evaporation"의 합성어인데 액체혼합물이 치밀한 비다공질막을 통해 이동하는 동안 증기화되면서 분리되는 막분리 공정이다. 이 공정에서 막 한쪽면은 액체공급액과 접하고 있고 다른 한쪽면은 낮은 투과물의 증기압과 접하고 있는데 낮은 증기압은 진공(vacuum pervaporation)을 가하거나 혹은 불활성의 담체가스(sweep gas pervaporation)를 흐르게 하므로써 얻을 수 있다. 이때 막 내부에 트과증발막공정의 추진력인 화학 포텐셜(chemical potential) 구배가 발생하여 막을 통한 물질투과가 이루어지는데 각 투과성분의 투과속도는 투과성분과 막재료간의 물리화학적 인력에 의해 결정된다.의 물리화학적 인력에 의해 결정된다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.44.3-44
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• 1998

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.67-72
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• 1987

InSb TFT is fabricated by the vacuum evaporation method and I-V characteristics are measured. Employing Davidon Fletcher-Powell algorithm, the device parameters are extracted. The current-voltage relations calculated by extracdted parameters are in good agreement with experimental results. It is found that optimization technique may be more simple and accurate than curve fitting method in device parameters extration.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.236-236
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• 2012

In this study, we present the salt repellent behavior of superhydrophobic filtration membrane. Bio-fouling or mineral-fouling is the main factor of decreasing the performance of filtration membrane. The superhydrophobic modification of filtration membrane using PECVD (Plasma enhanced chemical vapor deposition) is introduced. The oxygen plasma was introduced for developing nano hairy structures and subsequent HMDSO (Hexamethyldisiloxane) coating was used for enhancing low surface energy. Saline water evaporation test was carried out to evaluate the difference of contamination of salt on superhydrophobic and moderately hydrophobic filtration membrane. EDS and EPMA were used for visualizing the residue of salt crystal.